IP Library Granted Patent US 8,693,090
Granted Patent B2
US 8,693,090 · App. 13/000,674 · Granted Apr 8, 2014

Extreme UV radiation reflecting element comprising a sputter-resistant material

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Quick Facts
Patent No.
US 8,693,090
App. No.
13/000,674
Granted
Apr 8, 2014
Kind
B2
Abstract

The invention relates to an improved EUV reflecting element comprising a) a first layer essentially made out of a highly reflective material b) a second layer having a thickness of ≦5 nm and essentially made out of a material with a sputter resistance of ≦10 nm per 10 8 shots and whereby the second layer is provided in the path of the incident and/or reflected EUV light.

Claims (9)

1. An Extreme Ultraviolet (EUV) radiation reflection element comprising:

a first layer comprising a reflective material, wherein said reflective material has a reflectivity of ≧50%; and

a second layer including material that has a thickness ≦5 nm and a sputter resistance of ≦2 nm per 10 8 shots, wherein the second layer is provided in the path of incident EUV light and wherein said material of the second layer is disposed on and in contact with said reflective material.

2. The EUV radiation reflecting element according to claim 1 , wherein the first layer comprises a material selected from the group consisting of Titanium, Vanadium, Chromium, Yttrium, Zirconium, Niobium, Molybdenum, Technetium, Ruthenium, Rhodium, Palladium, Silver, Tantalum, Tungsten, Rhenium, Osmium, Iridium, Platinum, Gold, Thallium, Lead, diamond-like carbon (DLC) or mixtures and/or alloys thereof.

3. The EUV radiation reflecting element of claim 1 , wherein the second layer comprises a material selected from the group consisting of highly covalent metal oxides, nitrides, carbides, oxinitrides or mixtures thereof.

4. The EUV radiation reflecting element of claim 1 , wherein the second layer comprises a material selected from the group consisting of oxides, nitrides, borides, phosphides, carbides, sulfides, silicides of molybdenum, tungsten, beryllium, aluminum, erbium or mixtures thereof.

5. The EUV radiation reflecting element according to claim 1 , wherein the second layer comprises a material selected from the group consisting of tungsten, graphite, graphene, carbon composite materials or carbon fiber materials or mixtures thereof.

6. The EUV radiation reflecting element according to claim 1 , wherein the second layer comprises an alloy, wherein at least one component of said alloy is selected out of the group consisting of molybdenum, tungsten, titanium, rhenium and silicon.

7. The EUV radiation reflecting element according to claim 1 , wherein the material of the second layer is molybdenurn.

Assignments (5)
CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE PREVIOUSLY RECORDED AT REEL: 049771 FRAME: 0112. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jul 30, 2019
From: KONINKLIJKE PHILIPS N.V.
To: USHIO DENKI KABUSHIKI KAISHA
Reel/Frame 049897/0339 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 17, 2019
From: KONINKLIJKE PHILIPS N.V.
To: USHIO DENKI KABUSHIKI KAISHA
Reel/Frame 049771/0112 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2014
From: XTREME TECHNLOGIES GMBH
To: USHIO DENKI KABUSHIKI KAISHA
Reel/Frame 033978/0281 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 14, 2011
From: KONINKLIJKE PHILIPS ELECTRONICS, N.V.
To: XTREME TECHNOLOGIES GMBH
Reel/Frame 025801/0092 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2010
From: METZMACHER, CHRISTOF `
To: KONINKLIJKE PHILIPS ELECTRONICS N V
Reel/Frame 025534/0582 →