METHOD TO MANUFACTURE AN OXIDE SPUTTER TARGET COMPRISING A FIRST AND SECOND PHASE
The invention relates to a method to manufacture an oxide sputter target. The method comprises the steps of providing a target holder; applying an outer layer of a sputterable material on the target holder by simultaneously spraying at least one oxide and at least one metal. The outer layer of sputterable material comprises a first phase and a second phase. The first phase comprises an oxide of at least a first metal and a second metal; the second phase comprises a metal in its metallic phase. The metal in its metallic phase forms discrete volumes arranged in or between the oxide of the first phase. The outer layer of sputterable material comprises between 0.1 and 20 wt % metal in its metallic phase. The invention further relates to an oxide sputter target.
1 . A method to manufacture a oxide sputter target, said method comprising the steps of
providing a target holder;
applying an outer layer of a sputterable material on said target holder by simultaneously spraying at least one oxide and at least one metal, said outer layer comprising a first phase and a second phase, said first phase comprising an oxide of at least a first metal and a second metal, said second phase comprising a metal in its metallic phase, whereby said metal in its metallic phase forms discrete volumes arranged in or between said oxide of said first phase, said outer layer comprising between 0.1 and 20 wt % metal in its metallic phase.
2 . A method according to claim 1 , whereby said outer layer comprises between 0.1 and 5 wt % metal in its metallic phase, the remainder of said outer layer being oxide.
3 . A method according to claim 1 , whereby said metal of said second phase consists of said first metal of said oxide or of said second metal of said oxide.
4 . A method according to claim 1 , whereby said first metal of said oxide and/or said second metal of said oxide is/are selected from the group consisting of the elements of group IIa of the periodic system, the elements of group IIb of the periodic system, the elements of group IIa of the periodic system, the elements of group IVa of the periodic system, titanium, niobium, tantalum, molybdenum and antimony.
5 . A method according to claim 1 , whereby said first metal of said oxide is selected from the group consisting of magnesium, calcium, titanium, zinc, cadmium, gallium, indium and tin.
6 . A method according to claim 1 , whereby said second metal of said oxide is selected from the group consisting of magnesium, calcium, titanium, niobium, tantalum, molybdenum, zinc, cadmium, boron, aluminium, gallium, indium, germanium, tin and antimony.
7 . A method according to claim 1 , whereby said oxide is selected from the group consisting of indium tin oxides, indium zinc oxides, cadmium tin oxides, zinc tin oxides, zinc indium oxides, zinc aluminium oxides, magnesium indium oxides and gallium indium oxides.
8 . A method according to claim 1 , whereby said metal of said metallic phase is selected from the group consisting of the elements of group IIa of the periodic system, the elements of group IIb of the periodic system, the elements of group IIIa of the periodic system, the elements of group IVa of the periodic system, titanium, niobium, tantalum, molybdenum and antimony.
9 . A method according to claim 1 , whereby said target holder comprises a planar or a tubular target holder.
10 . A method according to claim 1 , whereby said method further comprises the step of applying a bond layer on said target holder before the application of said outer layer of a sputterable material.
11 . An oxide sputter target comprising a target holder and an outer layer of a sputterable material, said outer layer of a sputterable material obtainable by simultaneously spraying at least one oxide and at least one metal, said outer layer comprising a first phase and a second phase, said first phase comprising an oxide of at least a first metal and a second metal, said second phase comprising a metal in its metallic phase, whereby said metal in its metallic phase forms discrete volumes arranged in or between said oxide of said first phase, said outer layer comprising between 0.1 and 20 wt % metal in its metallic phase.
12 . An oxide sputter target according to claim 11 , whereby said outer layer comprises between 0.1 and 5 wt % metal in its metallic phase, the remainder of said outer layer being oxide.
13 . An oxide sputter target according to claim 11 , whereby said metal of said second phase consists of said first metal of said oxide or of said second metal of said oxide.
14 . An oxide sputter target according to claim 11 , whereby said first metal of said oxide and/or said second metal of said oxide is/are selected from the group consisting of the elements of group IIa of the periodic system, the elements of group IIb of the periodic system, the elements of group IIa of the periodic system, the elements of group IVa of the periodic system, titanium, niobium, tantalum, molybdenum and antimony.
15 . A target according to claim 11 , whereby said target holder comprises a planar or a tubular target holder.