Hybrid silicon wafer and method for manufacturing same
View Patent ↗Provided is a hybrid silicon wafer comprising a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer. Also provided is a method for manufacturing a hybrid silicon wafer having a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer, wherein a part of the sintered polysilicon is hollowed, a single crystal ingot is inserted into the hollowed portion, these are mutually bonded through thermal diffusion bonding based on HIP to prepare a complex of the sintered polysilicon and the single-crystal silicon ingot, and the complex is sliced. Thereby provided are a hybrid silicon wafer comprising functions of both the polysilicon wafer and the single-crystal wafer, and a method for manufacturing such a hybrid silicon wafer.
1. A hybrid silicon wafer comprising a structure in which a single-crystal silicon is embedded in a sintered polysilicon, wherein a maximum crystal grain size of the sintered polysilicon is 20 μm or less and an average grain size is 1 μm or more but 10 μm or less, and wherein said wafer being obtained by slicing an ingot complex in which a single crystal silicon ingot is embedded in a sintered polysilion ingot and these are bonded together through thermal diffusion bonding.
2. The hybrid silicon wafer according to claim 1 , wherein a bond part of the sintered polysilicon and the single-crystal silicon is diffusion bonded.
3. The hybrid silicon wafer according to claim 2 , wherein a peak strength of a modal crystal orientation at a sintered polysilicon portion of the hybrid silicon wafer is less than 50% of an overall peak strength in XRD measurement of a surface of the structure.
4. The hybrid silicon wafer according to claim 3 , wherein a longest diameter of a single-crystal silicon portion of the hybrid silicon wafer is more than 50% of a diameter of the overall hybrid silicon wafer.
5. The hybrid silicon wafer according to claim 4 , wherein the sintered polysilicon has the following mechanical properties (1) to (3):
(1) an average deflecting strength based on a three-point bending test is 20 kgf/mm 2 or more but 50 kgf/mm 2 or less;
(2) an average tensile strength is 5 kgf/mm 2 or more but 20 kgf/mm 2 or less; and
(3) an average Vickers hardness is Hv 800 or more but Hv 1200 or less.
6. The hybrid silicon wafer according to claim 5 , further comprising a polished surface in which a difference in the surface roughness Ra between the single-crystal and the sintered polysilicon is 0.02 μm or less.
7. A hybrid silicon wafer according to claim 6 , wherein the surface area of the single-crystal silicon is more than 50% of the surface area of the overall hybrid silicon wafer.
8. A hybrid silicon wafer according to claim 1 , wherein a peak strength of a modal crystal orientation at a sintered polysilicon portion of the hybrid silicon wafer is less than 50% of an overall peak strength in XRD measurement of a surface of the structure.
9. A hybrid silicon wafer according to claim 1 , wherein a longest diameter of a single-crystal silicon portion of the hybrid silicon wafer is more than 50% of a diameter of the overall hybrid silicon wafer.
10. A hybrid silicon wafer according to claim 1 , wherein the sintered polysilicon has the following mechanical properties: an average deflecting strength based on a three-point bending test of 20 kgf/mm 2 to 50 kgf/mm 2 ; an average tensile strength of 5 kgf/mm 2 to 20 kgf/mm 2 ; and an average Vickers hardness of Hv 800 to Hv 1200.
11. A hybrid silicon wafer according to claim 1 , further comprising a polished surface in which a difference in the surface roughness Ra between the single-crystal and the sintered polysilicon is 0.02 μm or less.
12. A hybrid silicon wafer according to claim 1 , wherein the surface area of the single-crystal silicon is more than 50% of the surface area of the overall hybrid silicon wafer.
13. A hybrid silicon wafer comprising a structure in which single-crystal silicon is embedded in sintered polysilicon, the sintered polysilicon having an average deflecting strength based on a three-point bending test of 20 kgf/mm 2 to 50 kgf/mm 2 , an average tensile strength of 5 kgf/mm 2 to 20 kgf/mm 2 , and an average Vickers hardness of Hv 800 to Hv 1200, and the structure being obtained by slicing an ingot complex in which a single crystal silicon ingot is embedded in a sintered polysilion ingot in which the single crystal silicon ingot and sintered polysilicon ingot are bonded together via thermal diffusion bonding.
14. A method for manufacturing a hybrid silicon wafer of claim 1 , comprising a structure in which a single-crystal silicon wafer is embedded in a sintered polysilicon, wherein a maximum crystal grain size of the sintered polysilicon is 20 μm or less and an average grain size is 1 μm or more but 10 μm or less, and wherein a part of a sintered polysilicon ingot is hollowed, a single crystal silicon ingot is inserted into the hollowed part of the sintered polysilicon ingot, these are mutually bonded through thermal diffusion bonding based on HIP to prepare a complex of the sintered polysilicon ingot and the single-crystal silicon ingot, and the complex is sliced.
15. A method according to claim 14 , wherein the single-crystal silicon wafer and the sintered polysilicon wafer after being sliced are simultaneously processed and polished.
16. A method according to claim 14 , wherein the surface area of the single-crystal silicon wafer is more than 50% of the surface area of the overall hybrid silicon wafer.