Nonvolatile semiconductor memory device
View Patent ↗A nonvolatile semiconductor memory device includes: a stacked body in which insulating films and electrode films are alternately stacked; selection gate electrodes provided on the stacked body; bit lines provided on the selection gate electrodes; semiconductor pillars; connective members separated from one another; and a charge storage layer provided between the electrode film and the semiconductor pillar. One of the connective members is connected between a lower part of one of the semiconductor pillars and a lower part of another of the semiconductor pillars. The one of the semiconductor pillars passes through one of the selection gate electrodes and is connected to one of the bit lines, and the another of the semiconductor pillars passes through another of the selection gate electrodes and is connected to another of the bit lines.
1. A nonvolatile semiconductor memory device comprising:
a stacked body in which a plurality of insulating films and a plurality of electrode films are alternately stacked;
a plurality of selection gate electrodes provided on the stacked body;
a plurality of bit lines provided on the selection gate electrodes;
a plurality of semiconductor pillars passing through the stacked body and the selection gate electrodes, whose upper ends are connected to the bit lines;
a plurality of connective members separated from one another, one of the connective members connected between a lower part of a first of the semiconductor pillars and a lower part of a second of the semiconductor pillars; and
a charge storage layer provided between each of the electrode films and each of the semiconductor pillars,
each of the electrode films being divided for each of the selection gate electrodes,
the first of the semiconductor pillars passing through a first of the selection gate electrodes and connected to a first of the bit lines, and
the second of the semiconductor pillars passing through a second of the selection gate electrodes and connected to a second of the bit lines,
wherein the selection gate electrode extends in a first direction orthogonal to a stacking direction of the insulating films and the electrode films, the bit line extends in a second direction orthogonal to the stacking direction and intersecting the first direction, and the one of the connective members extends in a direction orthogonal to the stacking direction and inclined to both the first direction and the second direction, and the first of the bit lines and the second of the bit lines are adjacent.
2. The device according to claim 1 , wherein one pair of the semiconductor pillars and the one of the connective members which are connected to one another are formed integrally by a same material.
3. The device according to claim 1 , wherein the one of the connective members is made of a semiconductor material, and the device further comprises a back gate for controlling a conduction state of the one of the connective members.
4. The device according to claim 3 , wherein the back gate sets the one of the connective members to be in a non-conduction state in writing operation and sets the one of the connective members to be in a conduction state in reading operation.