Patent Assignment
Reel/Frame 057016/0611
Change of Name and Address
Recorded: 2021-07-29
Pages: 101
Assignor
TOSHIBA MEMORY CORPORATION
Executed: 2019-10-01
Assignee
KIOXIA CORPORATION
1-21, SHIBAURA 3-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Properties
(126)
Nonvolatile Semiconductor Memory Having a Word Line Bent Towards a Select Gate Line Side
Non-Volatile Semiconductor Storage Device and Non-Volatile Storage System
Nonvolatile Latch Circuit and Nonvolatile Flip-Flop Circuit
Non-Volatile Semiconductor Memory Device and Method of Writing Data in Non-Volatile Semiconductor Memory Devices
Non-Volatile Semiconductor Memory Device
Non-Volatile Semiconductor Memory Device
Nand Flash Memory Device
Nonvolatile Semiconductor Memory Device and Nonvolatile Memory System
Nonvolatile Semiconductor Memory and Method for Manufacturing the Same
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory and Manufacturing Method Thereof
Nonvolatile Semiconductor Memory Device Using a Variable Resistance Film and Method of Manufacturing the Same
Nonvolatile Storage Device and Method for Manufacturing Same
Nonvolatile Semiconductor Memory Device
Non-Volatile Semiconductor Memory Device and Method of Writing Data in Non-Volatile Semiconductor Memory Devices
Nand Flash Memory
Non-Volatile Semiconductor Memory Device
Nonvolatile Semiconductor Storage Apparatus and Data Programming Method Thereof
Nonvolatile Semiconductor Memory Drive, Information Processing Apparatus and Management Method of Storage Area in Nonvolatile Semiconductor Memory Drive
Nonvolatile Semiconductor Storage Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Memory Device and Method of Manufacturing the Same
Non-Volatile Semiconductor Storage Device with Concurrent Read Operation
Non-Volatile Semiconductor Storage Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Non-Volatile Semiconductor Memory Device and a Programming Method Thereof
Nonvolatile Memory Device and Nonvolatile Memory Apparatus
Nonvolatile Memory Device
Non-Volatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Method Testing the Same
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Method for Manufacturing Same
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Storage Device and Method of Controlling and Manufacturing the Same
Nonvolatile Semiconductor Storage Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Having a Word Line Bent Towards a Select Gate Line Side
Nonvolatile Semiconductor Memory Device and Method for Manufacuring the Same
Nonvolatile Semiconductor Memory Device and Method for Manufacturing the Same
Nonvolatile Semiconductor Storage Device Having a Charge Storage Layer That Includes Metal Grains
Nonvolatile Semiconductor Memory Device
Non-Volatile Semiconductor Storage Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Non-Volatile Semiconductor Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Operation Method of the Same
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Storage Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Having a Word Line Bent Towards a Select Gate Line Side
Non-Volatile Memory Device
Nonvolatile Resistance Change Element
Nonvolatile Semiconductor Storage Device and Method of Manufacturing the Same
Nonvolatile Memory with Resistance Change Layer
Nonvolatile Semiconductor Memory Device and Control Method Thereof
Patent:
8,908,463 →
Application:
14/091,554 →
Nonvolatile Semiconductor Memory Device and Method for Manufacturing Same
Non-Volatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Method of Fabricating the Same
Nonvolatile Semiconductor Memory Having a Word Line Bent Towards a Select Gate Line Side
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Method for Manufacturing Same
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
A Non-Volatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Having a Word Line Bent Towards a Select Gate Line Side
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Stacked 3D Semiconductor Memory Structure
Nonvolatile Semiconductor Storage Device, and Method of Manufacturing the Same Nonvolatile Semiconductor Storage Device
A Nonvolatile Semiconductor Storage Device Including a Discharge Transistor for Discharging a Bit Line to a Source Line
Non-Volatile Semiconductor Memory Device
Three-Dimensional Semiconductor Memory Device and Method for Manufacturing the Same
Three Dimensional Vertical Channel Semiconductor Memory Device
Nonvolatile Semiconductor Storage Device and Method of Manufacturing Nonvolatile Semiconductor Storage Device
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device and Memory System
Nonvolatile Memory Device Manufacturing Method
Non-Volatile Semiconductor Memory Device
Semiconductor Memory Device
Semiconductor Memory Device Including a Substrate, Various Interconnections, Semiconductor Member, Charge Storage Member and a Conductive Member
Storage Device That Secures a Block for a Stream or Namespace and System Having the Storage Device
Semiconductor Device
Patent:
48,514 →
Application:
16/234,925 →
Memory Device, Host Device, Memory System, Memory Device Control Method, Host Device Control Method and Memory System Control Method
Patent:
48,418 →
Application:
16/249,093 →
Semiconductor Storage Device
Storage System Capable of Invalidating Data Stored in a Storage Device Thereof
Non-Volatile Memory Device
Memory Card
Memory Device and Host Device
Nand Raid Controller
Semiconductor Device with Sealed Semiconductor Chip
System, Device, and Method for Initializing a Plurality of Electronic Devices Using a Single Packet
Patent:
48,495 →
Application:
16/512,828 →
Resistive Random Access Memory Device with Three-Dimensional Cross-Point Structure and Method of Operating the Same
Semiconductor Memory Device with Memory Cells Each Including a Charge Accumulation Layer and a Control Gate
Semiconductor Device
Semiconductor Memory Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device
Semiconductor Device and Memory System
Manufacturing Method of a Semiconductor Device and Method for Creating a Layout Thereof
Floating Gate Nonvolatile Semiconductor Memory Device
Semiconductor Device
Non-Volatile Semiconductor Memory Device in Which Erase and Write Operations Are Sequentially Performed to Control Voltage Thresholds of Memory Cells
Semiconductor Device
Memory Device
Nonvolatile Semiconductor Memory Device
Voltage Regulator
Semiconductor Memory Device and Method for Manufacturing the Same
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory
Semiconductor Memory Device
Semiconductor Storage Device and Method of Controlling the Same
Semiconductor Memory Device for Storing Multivalued Data
Semiconductor Storage Device
Semiconductor Memory Device Which Stores Plural Data in a Cell
Semiconductor Memory Device and Method for Manufacturing Same
Semiconductor Memory Device and Memory System
Memory Card and Host Device Thereof
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 24, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043709/0035 →
Change of Name and Address
Jul 29, 2021
From: K.K PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 057016/0551 →
Merger
Jul 29, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K PANGEA
Reel/Frame 057016/0586 →