Semiconductor storage device

1. A semiconductor storage device, comprising:

a plurality of word lines extending in a first direction and a second direction, and separated from each other in a third direction, the first, second, and third directions crossing one another;

a plurality of sense amplifier circuits that partially overlap the word lines when viewed in the third direction;

a plurality of memory strings intersecting the word lines and extending in the third direction;

a plurality of memory-side bit lines extending in the first direction and separated from each other in the second direction, the memory-side bit lines including first, second, and third memory-side bit lines, wherein the second memory-side bit line is adjacent to and between the first and third memory-side bit lines;

a plurality of circuit-side bit lines between the word lines and the sense amplifier circuits, the circuit-side bit lines partially overlapping the respective memory-side bit lines when viewed in the third direction; and

a plurality of contact plugs extending in the third direction and respectively connecting the memory-side bit lines and the circuit-side bit lines, the contact plugs including first, second, and third contact plugs that are electrically connected to the first, second, and third memory-side bit lines, respectively, and are not aligned along either the first direction or the second direction.

2. The semiconductor storage device of claim 1 , wherein:

the memory-side bit lines further include fourth, fifth, and sixth memory-side bit lines, wherein the fifth memory-side bit line is adjacent to and between the fourth and sixth memory-side bit lines, and the fourth memory-side bit line is adjacent to the third memory-side bit line;

the circuit-side bit lines include first, second, and third circuit-side bit lines, and fourth, fifth, and sixth circuit-side bit lines; and

the contact plugs further include fourth, fifth, and sixth contact plugs, wherein the first and fourth contact plugs, the second and fifth contact plugs, and the third and sixth contact plugs are respectively provided in a first connection part, a second connection part, and a third connection part, the first, second, and third connection parts being separated from each other in the first direction,

the first contact plug electrically connecting the first memory-side bit line to the first circuit-side bit line and the fourth contact plug electrically connecting the fourth memory-side bit line to the fourth circuit-side bit line,

the second contact plug electrically connecting the second memory-side bit line to the second circuit-side bit line and the fifth contact plug electrically connecting the fifth memory-side bit line to the fifth circuit-side bit line, and

the third contact plug electrically connecting the third memory-side bit line to the third circuit-side bit line and the sixth contact plug electrically connecting the sixth memory-side bit line to the sixth circuit-side bit line.

3. The semiconductor storage device of claim 2 , wherein:

the first and fourth contact plugs are aligned along the second direction;

the second and fifth contact plugs are aligned along the second direction; and

the third and sixth contact plugs are aligned along the second direction.

4. The semiconductor storage device of claim 3 , wherein

the word lines includes a first part, a second part, a third part, and a fourth part provided respectively in first, second, third, and fourth array regions that are arranged in the first direction,

the first part and the second part being separated by the first connection part,

the second part and the third part being separated by the second connection part, and

the third part and the fourth part being separated by the third connection part.

5. The semiconductor storage device of claim 4 , wherein

the memory-side bit lines extend in the first direction to cross over the first part of the word lines, the first connection region, the second part of the word lines, the second connection region, the third part of the word lines, the third connection region, and the fourth part of the word lines.

6. The semiconductor storage device of claim 1 , wherein:

the word lines includes a first part, a second part, a third part, and a fourth part provided respectively in first, second, third, and fourth array regions that are arranged in the first direction,

the sense amplifier circuits are located in first, second, third, fourth, fifth, and sixth circuit regions that are arranged in the first direction;

the first and second circuit regions are located under the second part of the word lines;

the third and fourth circuit regions are located under the third part of the word lines; and

the fifth and sixth circuit regions are located under the fourth part of the word lines.

7. The semiconductor storage device of claim 6 , wherein

each of the sense amplifier circuits includes a low voltage circuit and a high voltage circuit, and

the circuit-side bit lines are respectively connected to the high voltage circuits of the sense amplifier circuits.

8. The semiconductor storage device of claim 6 , further comprising:

a plurality of contact plugs extending in the third direction and respectively connecting the circuit-side bit lines to the sense amplifier circuits.

9. The semiconductor storage device of claim 8 , wherein

the circuit-side bit lines are each connected between one of the contact plugs extending in the third direction and respectively connecting the circuit-side bit lines and the sense amplifier circuits, and one of the contact plugs extending in the third direction and respectively connecting the memory-side bit lines and the circuit-side bit lines.

10. The semiconductor storage device of claim 9 , wherein

the contact plugs extending in the third direction and respectively connecting the circuit-side bit lines and the sense amplifier circuits are not aligned along the second direction.

11. The semiconductor storage device of claim 6 , further comprising:

a plurality of data latches, each provided on the semiconductor substrate and under the word lines and connected to the sense amplifier circuits.