Nonvolatile semiconductor memory device and method of manufacturing the same

1. A nonvolatile semiconductor memory device, comprising:

a substrate;

a memory cell disposed within a memory cell region on the substrate, the memory cell accumulating a charge as data; and

a cover layer covering the memory cell, the cover layer having a structure in which a first silicon nitride layer, an intermediate layer, and a second silicon nitride layer are stacked sequentially from a side of the memory cell, the intermediate layer being amorphous silicon; wherein

the memory cell comprises: a gate insulating film disposed on the substrate; a floating gate electrode disposed on the gate insulating film; a block insulating film disposed above the floating gate electrode; and a control gate electrode disposed on the block insulating film;

a select transistor is disposed in a periphery of the memory cell within a memory cell region;

a peripheral transistor is disposed within a peripheral region, the peripheral region being in a periphery of the memory cell array region; and a contact is disposed in a periphery of said peripheral transistor;

the cover layer covers an upper portion of the peripheral transistor and has an end of the cover layer contacting the contact;

a spacer configured from an insulator is disposed on the upper portion of the peripheral transistor;

the cover layer is disposed curved toward a substrate surface direction in the portion shifting from the memory cell array region to the peripheral region, so as to cover upper portions of the memory cell and the select transistor and face part of a side surface of the select transistor; and

the cover layer is divided by the spacer.

2. The nonvolatile semiconductor memory device according to claim 1 , wherein

the intermediate layer is silicon oxide.

3. The nonvolatile semiconductor memory device according to claim 1 , wherein

the second silicon nitride layer is thicker than the first silicon nitride layer.

4. The nonvolatile semiconductor memory device according to claim 1 , wherein

the cover layer further comprises: a second intermediate layer disposed on an upper surface of the second silicon nitride layer; and a third silicon nitride layer disposed on an upper surface of said second intermediate layer.

5. The nonvolatile semiconductor memory device according to claim 1 , wherein

an inter-layer insulating layer configured from silicon oxide is interposed between the memory cell and the cover layer.