Patent Assignment
Reel/Frame 043541/0381
Assignment of Assignor's Interest
Recorded: 2017-08-14
Pages: 11
Assignor
KABUSHIKI KAISHA TOSHIBA
Executed: 2017-06-30
Assignee
TOSHIBA MEMORY CORPORATION
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, 105-0023, JAPAN
Covered Properties
(159)
Method for Controlling a Non-Volatile Semiconductor Memory Device
Non-Volatile Semiconductor Storage Device and Method of Manufacturing the Same
Non-Volatile Semiconductor Storage Device
Non-Volatile Semiconductor Storage Device and Method of Manufacturing the Same
Non-Volatile Semiconductor Storage Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Semiconductor Memory Device
Non-Volatile Semiconductor Storage Device
Semiconductor Memory Device
Non-Volatile Semiconductor Memory Device and Memory System
Nonvolatile Semiconductor Memory Device
Semiconductor Memory Device
Non-Volatile Semiconductor Storage Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device
Non-Volatile Semiconductor Storage Device
Patent:
45,307 →
Application:
13/848,563 →
Semiconductor Memory Device and Operation Method Thereof
Method for Controlling a Non-Volatile Semiconductor Memory Device
Patent:
46,749 →
Application:
13/852,792 →
Non-Volatile Semiconductor Storage Device
Nonvolatile Semiconductor Memory Device
Non-Volatile Semiconductor Storage Device
Patent:
45,832 →
Application:
14/026,844 →
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Non-Volatile Semiconductor Memory Device and Memory System
Nonvolatile Semiconductor Memory Device
Memory Device, Method of Controlling Memory Device, and Memory System
Memory System
Non-Volatile Semiconductor Storage Device and Method of Manufacturing the Same
Application:
14/204,508 →
Non-Volatile Semiconductor Storage Device and Method of Manufacturing the Same
Non-Volatile Semiconductor Storage Device
Nonvolatile Semiconductor Memory Device
Three-Dimensional Resistive Memory Device with Adjustable Voltage Biasing
Semiconductor Memory Device with a 3-Dimensional Stacked Memory Cell Structure.
3D Stacked Semiconductor Memory Devices with Sense Amplifier Electrically Connected to a Selecting Circuit
Semiconductor Memory Device
Semiconductor Memory Device and Method of Controlling the Same
Application:
14/457,414 →
Publication:
US 2015/0262679
Non-Volatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Non-Volatile Semiconductor Storage Device
Patent:
46,526 →
Application:
14/521,160 →
Nonvolatile Semiconductor Memory Device
Semiconductor Memory Device and Method of Manufacturing the Same
Non-Volatile Semiconductor Memory Device and Manufacturing Method Thereof
Semiconductor Memory Device and Operation Method Thereof
Non-Volatile Semiconductor Storage Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device
Semiconductor Memory Device with a Three-Dimensional Stacked Memory Cell Structure
Semiconductor Memory Device
Semiconductor Memory Device with Conductive Columnar Body
Semiconductor Memory Device with First and Second Semicondutor Films in First and Second Columnar Bodies
Non-Volatile Semiconductor Memory Device and Memory System
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Memory Device, Method of Controlling Memory Device, and Memory System
Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device
Semiconductor Memory Device Having Memory Cells Provided in a Height Direction
Semiconductor Memory Device
Semiconductor Memory Device and Production Method Thereof
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Application:
14/849,772 →
Publication:
US 2016/0268269
Semiconductor Memory Device and Method of Manufacturing the Same While Avoiding Process Damage to a Variable Resistance Film
Semiconductor Memory Device
Semiconductor Apparatus and Manufacturing Method for Same
Semiconductor Apparatus and Manufacturing Method for Same
Semiconductor Memory Device and Method of Controlling the Same
Nonvolatile Semiconductor Memory Device
Semiconductor Memory Device
Non-Volatile Semiconductor Storage Device
Patent:
46,949 →
Application:
14/961,516 →
Semiconductor Memory Device
Memory Cell Array with Improved Substrate Current Pathway
Semiconductor Memory Device and Method of Manufacturing the Same
Non-Volatile Semiconductor Storage Device
Semiconductor Memory Device
3D Stacked Semiconductor Memory Architecture with Conductive Layer Arrangement
Nonvolatile Semiconductor Memory Device
Non-Volatile Semiconductor Memory Device
Simulation Device of Semiconductor Device and Simulation Method of Semiconductor Device
Application:
15/061,179 →
Publication:
US 2017/0061046
Semiconductor Memory Device
Semiconductor Memory Device, Semiconductor Device, and Method for Manufacturing the Same
Semiconductor Memory Device Including Semi-Selectable Memory Cells
Peripheral Structure for Nand Flash Memory Device
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Memory Device
Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device Having Electron Scattering and Electron Accumulation Capacities in Charge Accumulation Layer
Method of Manufacturing Semiconductor Memory Device Having Charge Accumulation Layer Positioned Between Control Gate Electrode and Semiconductor Layer
Semiconductor Device
Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Non-Volatile Semiconductor Memory Device and Memory System in Which Write Operation Is Resumed After Being Suspended for an Interrupt Operation
Semiconductor Memory Device Having Variable Resistance Elements Provided at Intersections of Wiring Lines
Semiconductor Memory Device with Contact Plugs Extending Inside Contact Connection Portions
Nonvolatile Semiconductor Memory Device
Memory System
Memory Device, Method of Controlling Memory Device, and Memory System
Non-Volatile Semiconductor Storage Device and Method of Manufacturing the Same
Non-Volatile Semiconductor Memory Device and Manufacturing Method Thereof
Semiconductor Memory Device
Semiconductor Memory Device
Semiconductor Memory Device and Manufacturing the Same
Semiconductor Memory Device Including an Asymmetrical Memory Core Region
Semiconductor Memory Device
Application:
15/237,849 →
Publication:
US 2017/0278851
Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device
Semiconductor Memory Device and Method of Manufacturing the Same
Method of Manufacturing Semiconductor Memory Device
Patent:
9,711,515 →
Application:
15/246,768 →
Semiconductor Memory Device Having a Laminated Body Including a Plurality of Control Gate Electrodes Laminated in a First Direction
Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device
Patent:
9,691,786 →
Application:
15/253,244 →
Semiconductor Memory Devices Including a Memory Cell Array and Stepped Wiring Portions, and Manufacturing Methods Thereof
Semiconductor Memory Device
Semiconductor Memory Device
Semiconductor Memory Device
Semiconductor Memory Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device with First and Second Read Operations with Different Read Voltages
Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device
Semiconductor Memory Device
Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device
Semiconductor Memory Device and Controlling Method Thereof
Semiconductor Memory Device
Application:
15/267,616 →
Publication:
US 2017/0271362
Semiconductor Memory Device
Semiconductor Memory Device
Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device
Semiconductor Memory Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device
Memory Device, Method of Controlling Memory Device, and Memory System
Method of Controlling a Semiconductor Memory Device
Non-Volatile Semiconductor Storage Device
Nonvolatile Semiconductor Memory Device
Resistive Semiconductor Memory Device and Operation Method Thereof
Memory System Including a Memory Chip Configured to Receive an Erase Suspend Command and a Program Suspend Command from a Controller Chip
Resistive Memory with Varying Dopant Concentration in Select Transistor Channel
Semiconductor Memory Device with a Three-Dimensional Stacked Memory Cell Structure
Nonvolatile Semiconductor Memory Device
Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Semiconductor Memory Device
Semiconductor Memory Device and Method of Manufacturing the Same
Patent:
9,792,991 →
Application:
15/442,183 →
Semiconductor Device
Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Method of Calculating Processed Depth and Storage Medium Storing Processed-Depth Calculating Program
Application:
15/465,906 →
Publication:
US 2017/0364624
Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device Having a Control Circuit That Controls Voltage Applied to Non-Selected Word Lines Connected to Unselected Memory Cells
Non-Volatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Non-Volatile Semiconductor Storage Device
Patent:
47,355 →
Application:
15/649,125 →
Non-Volatile Semiconductor Storage Device and Method of Manufacturing the Same
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Merger
Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
Change of Name and Address
Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
Change of Name and Address
Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →