IP Library Granted Patent US 9,685,412
Granted Patent B2
US 9,685,412 · App. 14/916,470 · Granted Jun 20, 2017

Semiconductor apparatus and manufacturing method for same

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Quick Facts
Patent No.
US 9,685,412
App. No.
14/916,470
Granted
Jun 20, 2017
Kind
B2
Abstract

According to the embodiments, a semiconductor device includes a substrate, a plurality of insulating layers, a lower shield plate, a semiconductor device, an upper shield plate, and a side shield member. A first contact portion is formed on the substrate. The lower shield plate includes a magnetic substance and is provided above the substrate so as to avoid the first contact portion. The semiconductor chip is provided above the lower shield plate and has a second contact portion electrically connected to the first contact portion. The upper shield plate includes a magnetic substance and is provided above the semiconductor chip so as to avoid the second contact portion and a connection member. The side shield member includes a magnetic substance and connects side portions of the lower shield plate and the upper shield plate on which the connection member is not disposed.

Claims (12)

1. A method for producing a semiconductor device, comprising:

providing, above a substrate on which a first contact portion is formed, a lower shield plate that extends in a first direction and includes a magnetic substance so that the lower shield plate avoids the first contact portion;

placing, above the lower shield plate, a plurality of semiconductor chips each having a second contact portion at predetermined intervals in the first direction so that the first contact portion and the second contact portion correspond to each other;

electrically connecting the first contact portion and the second contact portion by using a connection member;

placing, above the semiconductor chips, an upper shield plate that extends in the first direction and includes a magnetic substance so that the upper shield plate avoids the second contact portion and the connection member;

forming a block by sealing the lower shield plate, the semiconductor chips, the connection member, and the upper shield plate by using a resin;

cutting the lower shield plate and the upper shield plate by forming, in the block, a first groove extending in a second direction intersecting with the first direction so that the first groove avoids the semiconductor chips;

forming, in the first groove, a side shield member that connects the lower shield plate and the upper shield plate and includes a magnetic substance; and

separating the semiconductor chips by cutting the block so that the side shield member is separated in the first direction.

2. The method according to claim 1 , wherein the side shield member is formed by filling the first groove with a resin containing a magnetic substance.

3. The method according to claim 1 , wherein the side shield member is formed by plating the first groove with a magnetic substance.

4. The method according to claim 1 , wherein the side shield member is formed by placing a pair of plate-like members including a magnetic substance in the second groove and then filling a space between the plate-like members with a resin.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 14, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043541/0381 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 15, 2016
From: TAKAKU, SATORU
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 038294/0600 →