Semiconductor memory device with first and second semiconductor films in first and second columnar bodies
View Patent ↗A semiconductor memory device according to an embodiment comprises: conductive layers stacked in a vertical direction on a semiconductor substrate; and first and columnar bodies that extend in the vertical direction, the first and second columnar bodies each comprising: a first film; a second film disposed on the first film; and a semiconductor film, and the first film of the second columnar body having an upper end positioned higher than a first position lower than a first conductive layer and lower than a second position higher than the first conductive layer and a lower end positioned at or lower than the first position, and the second film of the second columnar body having an upper end positioned higher than the second position and a lower end positioned lower than the first position.
1. A semiconductor memory device, comprising:
a plurality of conductive layers stacked in a vertical direction on a semiconductor substrate; and
a first columnar body and a second columnar body that extend in the vertical direction and have a side surface facing a side surface of the plurality of conductive layers,
the first columnar body and the second columnar body each comprising:
a first insulating film;
a first semiconductor film disposed on the first insulating film; and
a second semiconductor film disposed between the plurality of conductive layers and the first insulating film, and
the first semiconductor film of the first columnar body having a lower end terminating at an upper surface of the first insulating film in the first columnar body,
the first semiconductor film of the second columnar body having a lower end penetrating into the first insulating film to lower than the upper surface of the first insulating film in the second columnar body, and
the second columnar body having a cross-section which is larger than that of the first columnar body at the same position in the vertical direction.
2. The semiconductor memory device according to claim 1 , wherein
the first conductive layer is a conductive layer which is highest of the plurality of conductive layers.
3. The semiconductor memory device according to claim 1 , wherein
the first conductive layer is a conductive layer which is highest of the plurality of conductive layers contacting the second columnar body.
4. The semiconductor memory device according to claim 1 , wherein
a lower end of the first semiconductor film of the second columnar body is positioned at or lower than an upper surface of the semiconductor substrate in the vertical direction.
5. The semiconductor memory device according to claim 1 , wherein
the first insulating film adopts as a material thereof silicon oxide, and
the first semiconductor film adopts as a material thereof silicon, titanium, tungsten, nickel silicide, cobalt silicide, tungsten silicide, or silicon nitride.
6. The semiconductor memory device according to claim 1 , wherein
the first insulating film of the first columnar body has an upper end positioned higher than a first position and lower than a second position and a lower end positioned lower than the first position.
7. A semiconductor memory device, comprising:
a plurality of conductive layers stacked in a vertical direction on a semiconductor substrate; and
a first columnar body and a second columnar body that extend in the vertical direction and have a side surface facing a side surface of the plurality of conductive layers,
the first columnar body and the second columnar body each comprising:
a first insulating film;
a first semiconductor film disposed on the first insulating film; and
a multi-layer film including a second semiconductor film disposed between the plurality of conductive layers and the first insulating film, and
the first semiconductor film of the first columnar body having a lower end terminating at an upper surface of the first insulating film in the first columnar body,
the first semiconductor film of the second columnar body being disposed on the multi-layer film via the first insulating film and having a lower end penetrating into the first insulating film in the second columnar body to lower than the upper surface of the first insulating film in the second columnar body, and
the second columnar body having a cross-section which is larger than that of the first columnar body at the same position in the vertical direction.
8. The semiconductor memory device according to claim 7 , wherein
the first conductive layer is a conductive layer which is highest of the plurality of conductive layers.
9. The semiconductor memory device according to claim 7 , wherein
the first conductive layer is a conductive layer which is highest of the plurality of conductive layers contacting the second columnar body.
10. The semiconductor memory device according to claim 7 , wherein
a lower end of the first semiconductor film of the second columnar body is positioned at or lower than an upper surface of the semiconductor substrate in the vertical direction.
11. The semiconductor memory device according to claim 7 , wherein
the first insulating film adopts as a material thereof silicon oxide, and
the first semiconductor film adopts as a material thereof silicon, titanium, tungsten, nickel silicide, cobalt silicide, tungsten silicide, or silicon nitride.
12. The semiconductor memory device according to claim 7 , wherein
the first semiconductor film of the first columnar body contacts the multi-layer film at a second position.
13. A semiconductor memory device, comprising:
a plurality of conductive layers stacked in a vertical direction on a semiconductor substrate; and
a first columnar body and a second columnar body that extend in the vertical direction and have a side surface facing a side surface of the plurality of conductive layers,
the first columnar body and the second columnar body each comprising:
a first insulating film;
a first semiconductor film disposed on the first insulating film; and
a multi-layer film including a second semiconductor film disposed between the plurality of conductive layers and the first insulating film, and
the first semiconductor film of the first columnar body having a lower end terminating at an upper surface of the first insulating film in the first columnar body,
the first semiconductor film of the second columnar body having a lower end penetrating into the first insulating film in the second columnar body to lower than the upper surface of the first insulating film in the second columnar body, and
the second columnar body having a cross-section which is larger than that of the first columnar body at the same position in the vertical direction.
14. The semiconductor memory device according to claim 13 , wherein
the first conductive layer is a conductive layer which is highest of the plurality of conductive layers.
15. The semiconductor memory device according to claim 13 , wherein
the first conductive layer is a conductive layer which is highest of the plurality of conductive layers contacting the second columnar body.
16. The semiconductor memory device according to claim 13 , wherein
a lower end of the first semiconductor film of the second columnar body is positioned at or lower than an upper surface of the semiconductor substrate in the vertical direction.
17. The semiconductor memory device according to claim 13 , wherein
the first insulating film adopts as a material thereof silicon oxide, and
the first semiconductor film adopts as a material thereof silicon, titanium, tungsten, nickel silicide, cobalt silicide, tungsten silicide, or silicon nitride.