Non-volatile semiconductor memory device

1. A non-volatile semiconductor memory device comprising:

a semiconductor substrate;

stack structures arranged in a first direction horizontal to a surface of the semiconductor substrate, one of the stack structures having a longitudinal direction, the longitudinal direction being a second direction horizontal to the surface of the semiconductor substrate and crossing the first direction, one of the stack structures having a plurality of semiconductor layers functioning as a channel of a memory cell, the semiconductor layers being stacked between interlayer insulating layers in a third direction perpendicular to the first and second directions, and the semiconductor layers having a longitudinal direction in the second direction;

a memory film provided on side surfaces on the first direction of the stack structures, the memory film comprising a charge accumulation film of the memory cell; and

conductive films provided on side surfaces on the first direction of the stack structures via the memory film, the conductive films functioning as control electrodes of the memory cell,

one of the stack structures having a shape increasing in width from a side away from the semiconductor substrate to the semiconductor substrate in a cross-section comprising the first and third directions,

one of the conductive films having a shape increasing in width from the side away from the semiconductor substrate to the semiconductor substrate in a cross-section comprising the second and third directions, and

predetermined portions in the semiconductor layers having different impurity concentrations between upper and lower semiconductor layers.

2. The device according to claim 1 , wherein

in the semiconductor layers, portions forming the channel of the memory cell have an impurity concentration higher in upper semiconductor layers.

3. The device according to claim 1 , wherein

in a plurality of semiconductor layers included in one stack structure, the thickness in the third direction is larger in upper semiconductor layers.

4. The device according to claim 2 , wherein

in a plurality of semiconductor layers included in one stack structure, the thickness in the third direction is larger in upper semiconductor layers.

5. The device according to claim 1 , wherein

in the semiconductor layers, portions forming sources/drains of the memory cell have an impurity concentration higher in lower semiconductor layers.

6. The device according to claim 1 , wherein

in a plurality of semiconductor layers included in one stack structure, the thickness in the third direction is larger in lower semiconductor layers.

7. The device according to claim 5 , wherein

in a plurality of semiconductor layers included in one stack structure, the thickness in the third direction is larger in lower semiconductor layers.

8. The device according to claim 1 , wherein

the conductive films have a comb-blade shape, and comb-blade portions thereof each extends in the third direction.

9. The device according to claim 1 , wherein each of the semiconductor layers includes a memory string having a plurality of memory cells connected in series.

10. A non-volatile semiconductor memory device comprising:

a semiconductor substrate;

stack structures arranged in a first direction horizontal to a surface of the semiconductor substrate, one of the stack structures having a longitudinal direction, the longitudinal direction being a second direction horizontal to the surface of the semiconductor substrate and crossing the first direction, one of the stack structures having a plurality of semiconductor layers functioning as a channel of a memory cell, the semiconductor layers being stacked between interlayer insulating layers in a third direction perpendicular to the first and second directions, and the semiconductor layers having a longitudinal direction in the second direction;

a memory film provided on side surfaces on the first direction of the stack structures, the memory film comprising a charge accumulation film of the memory cell; and

conductive films provided on side surfaces on the first direction of the stack structures via the memory film, the conductive films functioning as control electrodes of the memory cell,

one of the stack structures having a shape increasing in width from a side away from the semiconductor substrate to the semiconductor substrate in a cross-section comprising the first and third directions,

one of the conductive films having a shape decreasing in width from the side away from the semiconductor substrate to the semiconductor substrate in a cross-section comprising the second and third directions, and

in a plurality of semiconductor layers included in one stack structure, the thickness of a semiconductor layer in the third direction being larger in upper layers that are further from the semiconductor substrate.

11. The according to claim 10 , wherein

in the semiconductor layers, portions forming sources/drains of the memory cell have an impurity concentration lower in lower semiconductor layers.

12. The device according to claim 10 , wherein

the conductive films have a comb-blade shape, and comb-blade portions thereof each extends in the third direction.

13. The device according to claim 10 , wherein each of the semiconductor layers includes a memory string having a plurality of memory cells connected in series.

14. A non-volatile semiconductor memory device comprising:

a semiconductor substrate;

stack structures arranged in a first direction horizontal to a surface of the semiconductor substrate, one of the stack structures having a longitudinal direction, the longitudinal direction being a second direction horizontal to the surface of the semiconductor substrate and crossing the first direction, one of the stack structures having a plurality of semiconductor layers functioning as a channel of a memory cell, the semiconductor layers being stacked between interlayer insulating layers in a third direction perpendicular to the first and second directions, and the semiconductor layers having a longitudinal direction in the second direction;

a memory film provided on side surfaces on the first direction of the stack structures, the memory film comprising a charge accumulation film of the memory cell; and

conductive films provided on side surfaces on the first direction of the stack structures via the memory film, the conductive films functioning as control electrodes of the memory cell,

one of the stack structures having a shape increasing in width from a side away from the semiconductor substrate to the semiconductor substrate in a cross-section comprising the first and third directions,

one of the conductive films having a shape decreasing in width from the side away from the semiconductor substrate to the semiconductor substrate in a cross-section comprising the second and third directions, and

predetermined portions in the semiconductor layers having different impurity concentrations between upper and lower semiconductor layers.

15. The device according to claim 14 , wherein

in the semiconductor layers, portions forming the channel of the memory cell have an impurity concentration higher in lower semiconductor layers.

16. The device according to claim 14 , wherein

in the semiconductor layers, portions forming sources/drains of the memory cell have an impurity concentration higher in upper semiconductor layers.

17. The device according to claim 14 , wherein

the conductive films have a comb-blade shape, and comb-blade portions thereof each extends in the third direction.

18. The device according to claim 14 , wherein each of the semiconductor layers includes a memory string having a plurality of memory cells connected in series.