Non-volatile semiconductor storage device and method of manufacturing the same
View Patent ↗A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.
1. A non-volatile semiconductor storage device having a memory string having memory cells electrically connected in series, the memory string comprising:
a first semiconductor layer having a first portion and a second portion extending in a vertical direction with respect to a substrate and a third portion connecting the first portion and the second portion;
a first line disposed to a side surface of the first portion;
a memory portion disposed between the first portion and the first line; and
a gate electrode disposed to a side surface of the third portion.
2. The non-volatile semiconductor storage device according to claim 1 , wherein the third portion connects a lower part of the first portion and a lower part of the second portion.
3. The non-volatile semiconductor storage device according to claim 1 , wherein the memory portion surrounds the side surface of the first portion, and
the first line surrounds the side surface of the first portion via the memory portion.
4. The non-volatile semiconductor storage device according to claim 1 , further comprising another memory portion disposed between the third portion and the gate electrode.
5. The non-volatile semiconductor storage device according to claim 1 , wherein the gate electrode surrounds a side surface of the third portion.
6. The non-volatile semiconductor storage device according to claim 1 , wherein the gate electrode is disposed to a bottom surface of the third portion.
7. The non-volatile semiconductor storage device according to claim 1 , wherein the gate electrode is disposed to an upper surface of the third portion.
8. A non-volatile semiconductor storage device having memory strings in each of which memory cells are electrically connected in series, each of the memory strings comprising:
a first semiconductor layer having a first portion and a second portion extending in a vertical direction with respect to a substrate and a third portion connecting the first portion and the second portion;
a first line disposed to a side surface of the first portion; and
a memory portion disposed between the first portion and the first line,
wherein third portions of the memory strings are insulated from each other.
9. The non-volatile semiconductor storage device according to claim 8 , wherein the third portion connects a lower part of the first portion and a lower part of the second portion.
10. The non-volatile semiconductor storage device according to claim 8 , wherein the memory portion surrounds the side surface of the first portion, and
the first line surrounds the side surface of the first portion via the memory portion.
11. The non-volatile semiconductor storage device according to claim 8 , wherein the first line extends in a first direction parallel to the substrate, and
first lines are divided for each of first portions arranged in a second direction, the second direction being parallel to the substrate and intersecting with the first direction.
12. The non-volatile semiconductor storage device according to claim 8 , wherein the first line extends in a first direction parallel to the substrate, and
first lines are divided for two first portions arranged in a second direction, the second direction being parallel to the substrate and intersecting with the first direction.
13. The non-volatile semiconductor storage device according to claim 8 , wherein first lines are stacked in a vertical direction with respect to the substrate.
14. The non-volatile semiconductor storage device according to claim 13 , wherein the first lines have a pair of comb-shaped portions meshed in a direction parallel to the substrate.
15. The non-volatile semiconductor storage device according to claim 14 , wherein the first lines have a step-like portion.
16. The non-volatile semiconductor storage device according to claim 15 , the step-like portion is located in a side of the first lines opposite to a side where the comb-shaped portions are disposed.
17. A non-volatile semiconductor storage device having a memory string having memory cells electrically connected in series, the memory string comprising:
a first semiconductor layer having a first portion and a second portion extending in a vertical direction with respect to a substrate and a third portion connecting the first portion and the second portion;
a first line disposed to a side surface of the first portion;
a memory portion disposed between the first portion and the first line;
a second line electrically connecting to the first portion; and
a third line electrically connecting to the second portion, the third line being located above the second line.
18. The non-volatile semiconductor storage device according to claim 17 , wherein the third portion connects a lower part of the first portion and a lower part of the second portion.
19. The non-volatile semiconductor storage device according to claim 17 , wherein the first portion and the second portion are arranged in a first direction,
the second line extends in a second direction perpendicular to the first direction, and
the third line extends in the first direction.
20. The non-volatile semiconductor storage device according to claim 17 , wherein the second line connects with an upper part of the first portion, and
the third line connects with an upper part of the second portion.