Semiconductor apparatus and manufacturing method for same

1. A semiconductor device comprising:

a substrate on which a first contact portion is formed, the substrate extending in a first direction and a second direction crossing the first direction;

a lower shield plate that is provided above the substrate so as to avoid the first contact portion and includes a magnetic substance;

a semiconductor chip that is provided above the lower shield plate and has a second contact portion electrically connected to the first contact portion;

a connection member that electrically connects the first contact portion and the second contact portion;

an insulating resin that covers an upper surface and two side surfaces in the first direction of the semiconductor chip; and

an upper shield plate that is provided above the insulating resin so as to avoid the second contact portion and the connection member and includes a magnetic substance,

the lower shield plate having two ends on either side of the semiconductor chip in the first direction,

the two ends of the lower shield plate being bent toward the upper shield plate so as to form two side wall portions whose tips are connected to the upper shield plate, and

the side wall portions extending in the second direction and continuously covering a side surface in the first direction of the semiconductor chip via the insulating resin.

2. The semiconductor device according to claim 1 , wherein at least one of the side wall portions faces at least one of the side surfaces of the semiconductor chip on which the connection member is not disposed.

3. A method for producing a semiconductor device, comprising:

providing, above a substrate on which a first contact portion is formed, a lower shield plate including a magnetic substance so that the lower shield plate avoids the first contact portion, the substrate extending in a first direction and a second direction crossing the first direction;

placing, above the lower shield plate, a semiconductor chip having a second contact portion electrically connected to the first contact portion so that the first contact portion and the second contact portion correspond to each other;

electrically connecting the first contact portion and the second contact portion by using a connection member; and

pressing, against the semiconductor chip, an upper shield plate that includes a magnetic substance and that has, on a rear surface thereof, a plastic insulating layer having a predetermined thickness so that the rear surface faces the semiconductor chip and so that the upper shield plate avoids the second contact portion and the connection member and making the lower shield plate and the upper shield plate in contact with each other via a side wall portion extending from an end in the first direction of at least one of the lower shield plate and the upper shield plate to the other one of the lower shield plate and the upper shield plate.

4. The method according to claim 3 , wherein the lower shield plate and the upper shield plate have two side wall portions.

5. The method according to claim 3 , wherein the lower shield plate has the side wall portion(s).

6. The method according to claim 4 , wherein the lower shield plate has the side wall portion(s).

7. The semiconductor device according to claim 1 , wherein a width in the second direction of the upper shield plate is smaller than a with in the second direction of the semiconductor chip.

8. The semiconductor device according to claim 1 , wherein a width in the second direction of the upper shield plate is smaller than a with in the second direction of the lower shield plate.

9. The semiconductor device according to claim 1 , wherein the lower shield plate includes PC permalloy, a magnetic alloy containing iron other than the PC permalloy or a high-magnetic-permeability material other than the magnetic alloy containing iron.

10. The semiconductor device according to claim 1 , wherein the side wall portions extend in a third direction in which the substrate, the lower shield plate, the semiconductor chip and the upper shield plate are stacked and continuously cover the side surfaces in the first direction of the semiconductor chip.

11. The method according to claim 3 , wherein the side wall portion extends in the second direction and continuously covers a side surface in the first direction of the semiconductor chip.

12. The method according to claim 3 , wherein a width in the second direction of the upper shield plate is smaller than a with in the second direction of the semiconductor chip.

13. The method according to claim 3 , wherein a width in the second direction of the upper shield plate is smaller than a with in the second direction of the lower shield plate.

14. The method according to claim 3 , wherein the lower shield plate includes PC permalloy, a magnetic alloy containing iron other than the PC permalloy or a high-magnetic-permeability material other than the magnetic alloy containing iron.

15. The method according to claim 11 , wherein the side wall portion extends in a third direction in which the substrate, the lower shield plate, the semiconductor chip and the upper shield plate are stacked and continuously covers the side surface in the first direction of the semiconductor chip.

16. The method according to claim 3 , wherein the upper shield plate is pressed against the semiconductor chip so that the plastic insulating layer covers an upper surface and two side surfaces in the first direction of the semiconductor chip.

17. The method according to claim 3 , wherein

the lower shield plate has two ends in the first direction, the two ends of the lower shield plate being bent toward the upper shield plate so as to form two side wall portions,

the semiconductor chip is placed above the lower shield plate between the two side wall portions, and

the upper shield plate is pressed against the semiconductor chip so as to make the lower shield plate and the upper shield plate in contact with each other via the two side wall portions.