Memory cell array with improved substrate current pathway
View Patent ↗A semiconductor memory device according to an embodiment includes a first semiconductor layer containing an acceptor and a memory cell array including an interlayer insulating layer and a conductive layer arranged in a first direction above the first semiconductor layer and a memory columnar body extending in the first direction and having a lower end positioned lower than a position of a top surface of the first semiconductor layer, the memory columnar body containing a second semiconductor layer in a columnar shape having a side face opposite to a side face of the conductive layer, wherein a first portion of the first semiconductor layer in contact with the side face of the memory columnar body contains a donor in a higher concentration than a second portion different from the first portion of the first semiconductor substrate.
1. A semiconductor memory device comprising:
a first semiconductor layer containing an acceptor; and
a memory cell array including an interlayer insulating layer and a conductive layer arranged in a first direction above the first semiconductor layer and a memory columnar body extending in the first direction and having a lower end positioned lower than a position of a top surface of the first semiconductor layer, the memory columnar body containing a second semiconductor layer in a columnar shape having a side face opposite to a side face of the conductive layer,
a first portion of the first semiconductor layer in contact with the side face of the memory columnar body containing a donor in a higher concentration than a second portion different from the first portion of the first semiconductor layer, and
the second portion of the first semiconductor layer being on a top surface of the first semiconductor layer and being arranged farther than the first portion from the side face of the memory columnar body.
2. The semiconductor memory device according to claim 1 , wherein
a concentration of the donor of the first portion of the first semiconductor layer is higher than the concentration of the acceptor of the first semiconductor layer.
3. The semiconductor memory device according to claim 1 , wherein
the donor is phosphorus (P) or arsenic (As), and
the acceptor is boron (B).
4. The semiconductor memory device according to claim 1 , wherein
a concentration of the donor of the first portion of the first semiconductor layer is 1×10 14 to 1×10 17 atm/cm 3 .
5. The semiconductor memory device according to claim 1 , wherein
a concentration of the acceptor of the first semiconductor layer is 1×10 10 to 1×10 13 atm/cm 3 .
6. A semiconductor memory device comprising:
a first semiconductor layer containing an acceptor; and
a memory cell array including an interlayer insulating layer and a conductive layer arranged in a first direction above the first semiconductor layer and a memory columnar body extending in the first direction and having a lower end positioned lower than a position of a top surface of the first semiconductor layer, the memory columnar body containing a second semiconductor layer in a columnar shape having a side face opposite to a side face of the conductive layer,
a first portion of the first semiconductor layer in contact with a bottom and the side face of the memory columnar body containing a donor in a higher concentration than a second portion different from the first portion of the first semiconductor layer, and
the second portion of the first semiconductor layer being on a top surface of the first semiconductor layer and being arranged farther than the first portion from the side face of the memory columnar body.
7. The semiconductor memory device according to claim 6 , wherein
a concentration of the donor of the first portion of the first semiconductor layer is higher than the concentration of the acceptor of the first semiconductor layer.
8. The semiconductor memory device according to claim 6 , wherein
the donor is phosphorus (P) or arsenic (As), and
the acceptor is boron (B).
9. The semiconductor memory device according to claim 6 , wherein
a concentration of the donor of the first portion of the first semiconductor layer is 1×10 14 to 1×10 17 atm/cm 3 .
10. The semiconductor memory device according to claim 6 , wherein
a concentration of the acceptor of the first semiconductor layer is 1×10 10 to 1×10 13 atm/cm 3 .
11. The semiconductor memory device according to claim 6 , wherein
the second semiconductor layer of the memory columnar body has a side face in contact with the first semiconductor layer, and
the first portion of the first semiconductor layer contains the donor in the higher concentration than a third portion different from the first portion and the second portion and in contact with the side face of the second semiconductor layer of the memory columnar body.
12. The semiconductor memory device according to claim 6 , wherein
the second semiconductor layer of the memory columnar body includes a first semiconductor film having a side face in contact with the first semiconductor layer and a second semiconductor film arranged between the conductive layer and the first semiconductor film.
13. The semiconductor memory device according to claim 11 , wherein
the third portion of the first semiconductor layer is arranged in an arrangement area of the second semiconductor layer when viewed from the first direction.
14. A semiconductor memory device comprising:
a first semiconductor layer containing an acceptor; and
a memory cell array including an interlayer insulating layer and a conductive layer arranged in a first direction above the first semiconductor layer and a memory columnar body extending in the first direction and having a lower end positioned lower than a position of a top surface of the first semiconductor layer, the memory columnar body containing a second semiconductor layer in a columnar shape having a side face opposite to a side face of the conductive layer,
a first portion of the first semiconductor layer in contact with a bottom and the side face of the memory columnar body containing a donor in a higher concentration than a second portion different from the first portion of the first semiconductor layer,
the second semiconductor layer of the memory columnar body having a side face in contact with the first semiconductor layer, and
the first portion of the first semiconductor layer containing the donor in the higher concentration than a third portion different from the first portion and the second portion and in contact with the side face of the second semiconductor layer of the memory columnar body.
15. The semiconductor memory device according to claim 14 , wherein
a concentration of the donor of the first portion of the first semiconductor layer is higher than the concentration of the acceptor of the first semiconductor layer.
16. The semiconductor memory device according to claim 14 , wherein
the donor is phosphorus (P) or arsenic (As), and
the acceptor is boron (B).
17. The semiconductor memory device according to claim 14 , wherein
a concentration of the donor of the first portion of the first semiconductor layer is 1×10 14 to 1×10 17 atm/cm 3 .
18. The semiconductor memory device according to claim 14 , wherein
a concentration of the acceptor of the first semiconductor layer is 1×10 10 to 1×10 13 atm/cm 3 .
19. The semiconductor memory device according to claim 14 , wherein
the second semiconductor layer of the memory columnar body includes a first semiconductor film having a side face in contact with the first semiconductor layer and a second semiconductor film arranged between the conductive layer and the first semiconductor film.
20. The semiconductor memory device according to claim 14 , wherein
the third portion of the first semiconductor layer is arranged in an arrangement area of the second semiconductor layer when viewed from the first direction.