Semiconductor memory device and method of manufacturing the same
According to an embodiment, a semiconductor memory device comprises: control gate electrodes stacked above a substrate; a semiconductor layer that extends in a first direction above the substrate and faces the control gate electrodes; and a gate insulating layer provided between these control gate electrode and semiconductor layer. The gate insulating layer comprises: a first insulating layer covering a side surface of the semiconductor layer; a charge accumulation layer covering a side surface of this first insulating layer; and a second insulating layer including a metal oxide and covering a side surface of this charge accumulation layer. The charge accumulation layer has: a first portion facing the control gate electrode; and a second portion facing a region between control gate electrodes adjacent in the first direction and including more oxygen than the first portion.
1. A semiconductor memory device, comprising:
a plurality of control gate electrodes stacked above a substrate;
a semiconductor layer that extends n a first direction above the substrate and faces the plurality of control gate electrodes; and
a gate insulating layer provided between the control gate electrodes and the semiconductor layer, the gate insulating layer comprising:
a first insulating layer covering a side surface of the semiconductor layer;
a charge accumulation layer covering a side surface of the first insulating layer and having a first portion and a second portion, the first portion facing one of the control gate electrodes, and the second portion facing a region between the control gate electrodes adjacent in the first direction and including more oxygen than the first portion; and
a second insulating layer including a metal oxide, covering a side surface of the charge accumulation layer and having a third portion and a fourth portion, the third portion being provided between the one of the control gate electrodes and the first portion of the charge accumulation layer, and the fourth portion being provided between the region between the control gate electrodes and the second portion of the charge accumulation layer, and
a film thickness of the third portion of the second insulating layer in a second direction crossing the first direction being larger than a film thickness of the fourth portion of the second insulating layer in the second direction.
2. The semiconductor memory device according to claim 1 , wherein
the third portion of the second insulating layer contacts the first portion of the charge accumulation layer,
the fourth portion of the second insulating layer contacts the second portion of the charge accumulation layer, and
the fourth portion of the second insulating layer includes more oxygen than the third portion of the second insulating layer.
3. The semiconductor memory device according to claim 1 , wherein a gap is provided in the region between the control gate electrodes adjacent in the first direction.
4. The semiconductor memory device according to claim 1 , further comprising a third insulating layer covering a side surface of the second insulating layer, the third insulating layer including silicon oxide, wherein
the first portion of the charge accumulation layer faces one of the control gate electrodes via the second insulating layer and the third insulating layer.
5. The semiconductor memory device according to claim 1 , wherein the second insulating layer contacts the side surface of the charge accumulation layer.
6. The semiconductor memory device according to claim 1 , further comprising an oxide barrier layer covering an upper surface and lower surface of the control gate electrode.