Semiconductor device and manufacturing method thereof
View Patent ↗According to one embodiment, a semiconductor device includes a semiconductor substrate and a laminated body. The laminated body is disposed on the semiconductor substrate. The laminated body includes a plurality of conducting layers and a first interlayer insulating film. The first interlayer insulating film is disposed between the plurality of conducting layers. A second interlayer insulating film is formed to cover this laminated body. The second interlayer insulating film includes boron.
1. A semiconductor device comprising:
a semiconductor substrate;
a laminated body including a plurality of conducting layers and a first interlayer insulating film, the plurality of the conducting layers being disposed above the semiconductor substrate, the first interlayer insulating film being disposed between the plurality of the conducting layers, and an end of the laminated body being formed into a stepped pattern in a stepped wiring area; and
a second interlayer insulating film that covers a side surface of the laminated body in the stepped wiring area, wherein
the second interlayer insulating film contains boron.
2. The semiconductor device according to claim 1 , wherein
the concentration of boron in the second interlayer insulating film is 5.5E21 to 8.5E21 (atom/cm 3 ).
3. The semiconductor device according to claim 1 , wherein
the conducting layers employ tungsten as material.
4. The semiconductor device according to claim 3 , wherein
the concentration of boron in the second interlayer insulating film is 5.5E21 to 8.5E21 (atom/cm 3 ).
5. The semiconductor device according to claim 1 , wherein
the second interlayer insulating film includes a plasma TEOS film that employs tetraethoxysilane (TEOS) gas as raw material gas.
6. The semiconductor device according to claim 5 , wherein
the concentration of boron in the second interlayer insulating film is 5.5E21 to 8.5E21 (atom/cm 3 ).
7. The semiconductor device according to claim 5 , wherein
the conducting layers employ tungsten as material.
8. The semiconductor device according to claim 7 , wherein
the concentration of boron in the second interlayer insulating film is 5.5E21 to 8.5E21 (atom/cm 3 ).
9. The semiconductor device according to claim 1 , wherein
the second interlayer insulating film has a film thickness of equal to or more than 3 μm.
10. The semiconductor device according to claim 9 , wherein
the concentration of boron in the second interlayer insulating film is 5.5E21 to 8.5E21 (atom/cm 3 ).
11. The semiconductor device according to claim 1 , wherein
the second interlayer insulating film includes a plasma silane film that employs silane (SiH4) gas as raw material gas.
12. The semiconductor device according to claim 11 , wherein
the concentration of boron in the second interlayer insulating film is 5.5E21 to 8.5E21 (atom/cm 3 ).
13. The semiconductor device according to claim 11 , wherein
the conducting layers employ tungsten as material.
14. The semiconductor device according to claim 13 , wherein
the concentration of boron in the second interlayer insulating film is 5.5E21 to 8.5E21 (atom/cm 3 ).
15. A manufacturing method of a semiconductor device, comprising:
forming a laminated body above a semiconductor substrate, the laminated body including a conducting layer and a first interlayer insulating film laminated in alternation;
forming an end of the laminated body into a stepped pattern in a stepped wiring area;
depositing a second interlayer insulating film covering a side surface of the laminated body in the stepped wiring area; and
doping boron as impurities in forming the second interlayer insulating film.
16. The manufacturing method of the semiconductor device according to claim 15 , wherein
the concentration of boron in the second interlayer insulating film is 5.5E21 to 8.5E21 (atom/cm 3 ).
17. The manufacturing method of the semiconductor device according to claim 15 , wherein
the conducting layer employs tungsten as material.
18. The manufacturing method of the semiconductor device according to claim 17 , wherein
the concentration of boron in the second interlayer insulating film is 5.5E21 to 8.5E21 (atom/cm 3 ).
19. The manufacturing method of the semiconductor device according to claim 15 , wherein
the second interlayer insulating film is deposited by using triethylborate (B(OC2H5)3) gas as raw material gas.
20. The manufacturing method of the semiconductor device according to claim 15 , wherein
the second interlayer insulating film is deposited by using diborane (B 2 H 6 ) gas as the raw material gas.