Semiconductor memory device and controlling method thereof
The control unit performs a first writing operation to obtain a first threshold voltage distribution, and a second writing operation to obtain a second threshold voltage distribution lower than the first threshold voltage distribution, and a third threshold voltage distribution higher than the first threshold voltage distribution. A verify reading operation is performed to determine whether any of the first to third threshold voltage distributions has been obtained. A step-up writing operation, in accordance with a result of the verify reading operation, increases a program voltage by a predetermined step-up width. The step-up writing operation, after start of the second writing operation, sets the step-up width to a first step-up width, and when the second writing operation has reached a predetermined phase, changes a second step-up width greater than the first step-up width at least once.
1. A semiconductor memory device comprising:
a memory cell array that includes memory cells arranged therein, the memory cells including an electric charge accumulating layer, respectively; and
a control unit that controls the memory cells, wherein
the control unit is configured to perform,
a first writing operation to write first data to one of the memory cells corresponding to first page data and thereby to obtain a first threshold voltage distribution, while performing a first step-up writing operation to increase a program voltage applied to a control gate of a memory cell by a predetermined step-up width,
a second writing operation to write second data to the one of the memory cells corresponding to second page data and thereby to obtain a second threshold voltage distribution lower than the first threshold voltage distribution, and a third threshold voltage distribution higher than the first threshold voltage distribution, while performing a second step-up writing operation to increase a program voltage applied to a control gate of a memory cell by a predetermined step-up width, the second threshold voltage distribution and the third threshold voltage distribution corresponding to the second page data, and
a verify reading operation to determine whether any of the first to third threshold voltage distributions has been obtained, the step-up writing operation being performed based on a result of the verify reading operation, wherein
the second step-up writing operation sets the step-up width to a first step-up width after start of the second writing operation and changes a second step-up width greater than the first step-up width at least once when the second writing operation is judged as having reached a predetermined phase based on the result of the verify reading operation.
2. The semiconductor memory device according to claim 1 , wherein
the second step-up writing operation sets the step-up width to a third step-up width smaller than the second step-up width after the second step-up writing operation with the second step-up width.
3. The semiconductor memory device according to claim 1 , wherein
the second step-up writing operation switches the step-up width to the second step-up width when having determined that the second threshold voltage distribution has been obtained during the verify reading operation after the start of the second writing operation.
4. The semiconductor memory device according to claim 3 , wherein
the second step-up writing operation sets the step-up width to a third step-up width smaller than the second step-up width after the second step-up writing operation with the second step-up width.
5. The semiconductor memory device according to claim 1 , wherein
the second step-up writing operation switches the step-up width to the second step-up width after the step-up writing operation is repeated predetermined times or more after the start of the second writing operation.
6. The semiconductor memory device according to claim 5 , wherein
the second step-up writing operation sets the step-up width to a third step-up width smaller than the second step-up width after the second step-up writing operation with the second step-up width.
7. The semiconductor memory device according to claim 1 , wherein
the verify reading operation detects completion of a writing operation to the third threshold voltage after the second step-up writing operation with the second step-up width is performed.
8. The semiconductor memory device according to claim 7 , wherein
the second step-up writing operation switches the step-up width to the second step-up width when having determined that the second threshold voltage distribution has been obtained during the verify reading operation after the start of the second writing operation.
9. The semiconductor memory device according to claim 1 , wherein
the memory cell array includes:
a plurality of conductive layers laminated on a semiconductor substrate,
a semiconductor layer that has a peripheral area surrounded by the conductive layer and extends in a first direction perpendicular to the semiconductor substrate as a longitudinal direction, and
a memory gate insulating film that is disposed between the semiconductor layer and the conductive layer and includes an electric charge accumulating layer.
10. The semiconductor memory device according to claim 9 , wherein
the memory gate insulating film, in addition to the electric charge accumulating layer, includes:
a tunnel insulating layer positioned closer to the semiconductor layer than the electric charge accumulating layer; and
a block insulating layer positioned closed to the conductive layer than the electric charge accumulating layer.
11. The semiconductor memory device according to claim 1 , wherein
the memory cells are each configured to store multivalued data.
12. The semiconductor memory device according to claim 11 , wherein
the first writing operation is an operation to write lower-bit data of the multivalued data, and
the second writing operation is an operation to write upper-bit data upper than the lower-bit data.
13. A controlling method of a semiconductor memory device including a memory cell array, the memory cell array including memory cells arranged therein, the memory cells including an electric charge accumulating layer, respectively, the controlling method comprising
performing a first writing operation to write first data to one of the memory cells corresponding to first page data and thereby to obtain a first threshold voltage distribution, while performing a first step-up writing operation to increase a program voltage applied to a control gate of a memory cell by a predetermined step-up width,
performing a second writing operation to write second data to the one of the memory cells corresponding to second page data and thereby to obtain a second threshold voltage distribution lower than the first threshold voltage distribution, and a third threshold voltage distribution higher than the first threshold voltage distribution, while performing a second step-up writing operation to increase a program voltage applied to a control gate of a memory cell by a predetermined step-up width, the second threshold voltage distribution and the third threshold voltage distribution corresponding to the second page data, and
performing a verify reading operation to determine whether any of the first to third threshold voltage distributions has been obtained after the first or second writing operation, the step-up writing operation being performed based on a result of the verify reading operation, wherein
the second step-up writing operation sets the step-up width to a first step-up width after start of the second writing operation, and changes a second step-up width greater than the first step-up width at least once when the second writing operation is judged as having reached a predetermined phase based on the result of the verify reading operation.
14. The controlling method according to claim 13 , wherein
the second step-up writing operation sets the step-up width to a third step-up width smaller than the second step-up width after the second step-up writing operation with the second step-up width.
15. The controlling method according to claim 13 , wherein
the second step-up writing operation switches the step-up width to the second step-up width when having determined that the second threshold voltage distribution has been obtained during the verify reading operation after the start of the second writing operation.
16. The controlling method according to claim 15 , wherein
the second step-up writing operation sets the step-up width to a third step-up width smaller than the second step-up width after the second step-up writing operation with the second step-up width.
17. The controlling method according to claim 13 , wherein
the second step-up writing operation switches the step-up width to the second step-up width after the step-up writing operation is repeated predetermined times or more after the start of the second writing operation.
18. The controlling method according to claim 17 , wherein
the second step-up writing operation sets the step-up width to a third step-up width smaller than the second step-up width after the second step-up writing operation with the second step-up width.
19. The controlling method according to claim 13 , wherein
the verify reading operation detects completion of a writing operation to the third threshold voltage after the second step-up writing operation with the second step-up width is performed.
20. The controlling method according to claim 19 , wherein
the second step-up writing operation switches the step-up width to the second step-up width when having determined that the second threshold voltage distribution has been obtained during the verify reading operation after the start of the second writing operation.