Non-volatile semiconductor memory device
View Patent ↗Stack structures are arranged in a first direction horizontal to a semiconductor substrate, one of which has a longitudinal direction along a second direction. One stack structure has a plurality of semiconductor layers stacked between interlayer insulating layers. A memory film is formed on side surfaces of the stack structures and include a charge accumulation film of the memory cell. Conductive films are formed on side surfaces of the stack structures via the memory film. One stack structure has a shape increasing in width from above to below in a cross-section including the first and third directions. One conductive film has a shape increasing in width from above to below in a cross-section including the second and third directions. Predetermined portions in the semiconductor layers have different impurity concentrations between upper and lower semiconductor layers.
1. A non-volatile semiconductor memory device comprising:
a plurality of stack structures being arranged in a first direction, a stack structure among the stack structures including a first semiconductor layer and a second semiconductor layer being stacked in a second direction crossing the first direction, the stack structure having a first length along the first direction and a second length along a third direction crossing the first and second directions, the second length being larger than the first length, the first semiconductor layer having a larger length in the first direction than the second semiconductor layer;
a memory layer disposed on surfaces facing the first direction of the first and second semiconductor layers; and
a conductive layer disposed on the surfaces facing the first direction of the first and second semiconductor layers via the memory layer, the conductive layer including a first portion and a second portion corresponding to the first and second semiconductor layers, respectively, the first portion having a larger length in the third direction than the second portion,
wherein a predetermined portion in the second semiconductor layer has a different impurity concentration from a predetermined portion in the first semiconductor layer.
2. The device according to claim 1 , wherein
the second semiconductor layer has a larger length in the second direction than the first semiconductor layer.
3. The device according to claim 1 , wherein
the predetermined portions correspond to channels of memory cells, and portions corresponding to sources/drains of the memory cell of the first semiconductor layer have a higher impurity concentration than portions corresponding to sources/drains of the memory cell of the second semiconductor layer.
4. The device according to claim 3 , wherein
the first semiconductor layer has a larger length in the second direction than the second semiconductor layer.
5. The device according to claim 1 , wherein
the predetermined portions correspond to channels of memory cells, and the predetermined portion in the second semiconductor layer has a higher impurity concentration than the predetermined portion in the first semiconductor layer.
6. The device according to claim 5 , wherein
the second semiconductor layer has a larger length in the second direction than the first semiconductor layer.
7. The device according to claim 1 , wherein
the first semiconductor layer has a larger length in the second direction than the second semiconductor layer.
8. The device according to claim 1 , wherein
the conductive layer has a comb-blade shape, and comb-blade portions thereof each extends in the second direction.
9. The device according to claim 1 , wherein
each of the first and second semiconductor layers includes a memory string having a plurality of memory cells connected in series.
10. A non-volatile semiconductor memory device comprising:
a plurality of stack structures being arranged in a first direction, a stack structure among the stack structures including a first semiconductor layer and a second semiconductor layer being stacked in a second direction crossing the first direction, the stack structure having a first length along the first direction and a second length along a third direction crossing the first and second directions, the second length being larger than the first length, the first semiconductor layer having a larger length in the first direction than the second semiconductor layer, and the second semiconductor layer having a larger length in the second direction than the first semiconductor layer; and
a memory layer disposed on surfaces facing the first direction of the first and second semiconductor layers,
wherein a predetermined portion in the second semiconductor layer has a different impurity concentration from a predetermined portion in the first semiconductor layer.
11. The according to claim 10 , wherein
a conductive layer disposed on the surfaces facing the first direction of the first and second semiconductor layers via the memory layer, the conductive layer including a first portion and a second portion corresponding to the first and second semiconductor layers, respectively, the second portion having a larger length in the third direction than the first portion.
12. The device according to claim 10 , wherein
the conductive layer has a comb-blade shape, and comb-blade portions thereof each extends in the second direction.
13. The device according to claim 10 , wherein
portions corresponding to sources/drains of memory cell of the first semiconductor layer have a lower impurity concentration than portions corresponding to sources/drains of memory cell of the second semiconductor layer.
14. The device according to claim 10 , wherein
each of the first and second semiconductor layers includes a memory string having a plurality of memory cells connected in series.
15. A non-volatile semiconductor memory device comprising:
a plurality of stack structures being arranged in a first direction, a stack structure among the stack structures including a first semiconductor layer and a second semiconductor layer being stacked in a second direction crossing the first direction, the stack structure having a first length along the first direction and a second length along a third direction crossing the first and second directions, the second length being larger than the first length, the first semiconductor layer having a larger length in the first direction than the second semiconductor layer;
a memory layer disposed on surfaces facing the first direction of the first and second semiconductor layers; and
a conductive layer disposed on the surfaces facing the first direction of the first and second semiconductor layers via the memory layer, the conductive layer including a first portion and a second portion corresponding to the first and second semiconductor layers, respectively, the second portion having a larger length in the third direction than the first portion,
wherein a predetermined portion in the second semiconductor layer has a different impurity concentration from a predetermined portion in the first semiconductor layer.
16. The device according to claim 15 , wherein
the predetermined portions correspond to channels of memory cells, and the predetermined portion in the first semiconductor layer has a higher impurity concentration than the predetermined portion in the second semiconductor layer.
17. The device according to claim 15 , wherein
the predetermined portions correspond to channels of memory cells, and portions corresponding to sources/drains of the memory cell of the second semiconductor layer have a higher impurity concentration than portions corresponding to sources/drains of the memory cell of the first semiconductor layer.
18. The device according to claim 15 , wherein
the conductive layer has a comb-blade shape, and comb-blade portions thereof each extends in the second direction.
19. The device according to claim 15 , wherein
each of the first and second semiconductor layers includes a memory string having a plurality of memory cells connected in series.