Memory device, method of controlling memory device, and memory system

1. A memory device, comprising:

in the case that three directions intersecting each other are assumed to be an X direction, a Y direction, and a Z direction,

a memory cell array including: row lines that are aligned in a two-dimensional array shape in the Y direction and the Z direction and extend in the X direction; column lines that are aligned in a two-dimensional array shape in the X direction and the Y direction and extend in the Z direction; global bit lines that are aligned in the X direction and extend in the Y direction; selection elements that are provided at ends of the column lines; and cells that are provided between the row lines and the column lines;

a selection circuit including: a row line selection circuit being configured to select at least one selected row line from the row lines; a global bit line selection circuit being configured to select at least one selected global bit lines from the global bit lines; and a selection element control circuit being configured to control the selection elements to connect/disconnect between the selected global bit line and one of the column lines; and

a data processing circuit including:

a data write pre-processing circuit being configured to process input data to generate first intermediate data;

a data write processing circuit being configured to sequentially set a voltage difference between the selected row line and the selected global bit line based on the first intermediate data;

a data read processing circuit being configured to detect a current flowing in the selected global bit line or a voltage of the selected global bit line and sequentially generate second intermediate data from a result of that detection; and

a data read post-processing circuit being configured to process the second intermediate data to generate output data, and

the data write pre-processing circuit and the data read post-processing circuit being configured to correct a difference that may occur between the input data and the output data.

2. The memory device according to claim 1 , wherein

the correcting function of the data write pre-processing circuit and the data read post-processing circuit being configured to correct a difference between the first intermediate data and the second intermediate data.

3. The memory device according to claim 1 , wherein

the data write processing circuit being configured to sequentially set a voltage of the selected row line in a state where a voltage of the selected global bit line is set constant.

4. The memory device according to claim 1 , wherein

the selected row lines are plural, and

the data processing circuit, when writing a series of the input data to the cells, is configured to sequentially write to a series of the cells selected by identical selected row lines and an identical one of the selected global bit lines.

5. The memory device according to claim 1 , wherein

the selected row lines are plural, and

the data processing circuit, when reading a series of the output data from the cells, is configured to sequentially read from a series of the cells selected by an identical selected row lines and an identical one of the selected global bit lines.

6. The memory device according to claim 1 , wherein

the data write pre-processing circuit includes a precoder being configured to correct a difference occurring between data stored by the cell and the second intermediate data.

7. The memory device according to claim 1 , wherein

the data write pre-processing circuit includes a waveform equalizer being configured to correct a difference occurring between the first intermediate data and data stored by the cell.

8. The memory device according to claim 1 , wherein

the data read post-processing circuit includes a whitening matched filter being configured to reduce a noise correlation of the second intermediate data.

9. The memory device according to claim 1 , wherein

the data read post-processing circuit includes a maximum likelihood decoder being configured to estimate the output data of maximum likelihood from the second intermediate data.

10. A method of controlling a memory device, the memory device comprising:

in the case that three directions intersecting each other are assumed to be an X direction, a Y direction, and a Z direction,

a memory cell array including: row lines that are aligned in a two-dimensional array shape in the Y direction and the Z direction and extend in the X direction; column lines that are aligned in a two-dimensional array shape in the X direction and the Y direction and extend in the Z direction; a plurality of global bit lines that are aligned in the X direction and extend in the Y direction; selection elements that are provided at ends of the column lines; and cells that are provided between the row lines and the column lines;

a selection circuit including: a row line selection circuit being configured to select at least one selected row line from the row lines; a global bit line selection circuit being configured to select at least one selected global bit line from the global bit lines; and a selection element control circuit being configured to control the selection elements to connect/disconnect between the selected global bit line and one of the column lines; and

a data processing circuit,

the method comprising the following steps executed by the data processing circuit, namely the steps of:

during write and read of data to/from the cell,

processing input data to generate first intermediate data;

sequentially setting a voltage difference between the selected row line and the selected global bit line based on the first intermediate data;

detecting a current flowing in the selected global bit line and sequentially generating second intermediate data from a result of that detection;

processing the second intermediate data to generate output data; and

when processing the input data to generate the first intermediate data and when processing the second intermediate data to generate the output data, correcting a difference that may occur between the input data and the output data.

11. The method of controlling a memory device according to claim 10 , further comprising the following step executed by the data processing circuit, namely the step of:

when correcting the difference that may occur between the input data and the output data, correcting a difference between the first intermediate data and the second intermediate data.

12. The method of controlling a memory device according to claim 10 , further comprising the following step executed by the data processing circuit, namely the step of:

when sequentially setting the voltage difference between the selected row line and the selected global bit line, sequentially setting a voltage of the selected row line in a state where a voltage of the selected global bit line is set constant.

13. The method of controlling a memory device according to claim 10 , further comprising the following step executed by the data processing circuit, namely the step of:

when writing a series of the input data to the cells, sequentially writing to a series of the cells selected by identical selected row lines and an identical one of the selected global bit lines.

14. The method of controlling a memory device according to claim 10 , further comprising the following step executed by the data processing circuit, namely the step of:

when reading a series of the output data from the cells, sequentially reading from a series of the cells selected by identical selected row lines and an identical one of the selected global bit lines.

15. The method of controlling a memory device according to claim 10 , further comprising the following step executed by the data processing circuit, namely the step of:

when correcting the difference that may occur between the input data and the output data, correcting a difference occurring between data stored by the cell and the second intermediate data.

16. The method of controlling a memory device according to claim 10 , further comprising the following step executed by the data processing circuit, namely the step of:

when correcting the difference that may occur between the input data and the output data, correcting a difference occurring between the first intermediate data and data stored by the cell.

17. The method of controlling a memory device according to claim 10 , further comprising the following step executed by the data processing circuit, namely the step of:

when correcting the difference that may occur between the input data and the output data, reducing a noise correlation of the second intermediate data.

18. The method of controlling a memory device according to claim 10 , further comprising the following step executed by the data processing circuit, namely the step of:

when correcting the difference that may occur between the input data and the output data, estimating the output data of maximum likelihood from the second intermediate data.

19. A memory system, comprising:

a memory main body chip that includes:

in the case that three directions intersecting each other are assumed to be an X direction, a Y direction, and a Z direction,

a memory cell array including: a plurality of row lines that are aligned in a two-dimensional array shape in the Y direction and the Z direction and extend in the X direction; a plurality of column lines that are aligned in a two-dimensional array shape in the X direction and the Y direction and extend in the Z direction; a plurality of global bit lines that are aligned in the X direction and extend in the Y direction; a plurality of selection elements that are provided at each of ends of the plurality of column lines and electrically connect/disconnect a plurality of the column lines aligned in the Y direction and a certain one of the global bit lines; and a plurality of cells that are provided at each of intersections of the plurality of row lines and the plurality of column lines,

a selection circuit including: a row line selection circuit that selects a certain row line from the plurality of row lines; a global bit line selection circuit that selects a certain global bit line from the plurality of global bit lines; and a selection element control circuit that controls connection/disconnection of the global bit line and the column line by the plurality of selection elements, and

a second data processing circuit that performs write and read of data to/from the cell; and

a controller chip comprising a first data processing circuit that performs write and read of data to/from the cell,

the first data processing circuit of the controller chip including a first data write pre-processing circuit that processes input data to generate third intermediate data,

the second data processing circuit of the memory main body chip including:

a second data write pre-processing circuit that processes the third intermediate data to generate first intermediate data;

a data write processing circuit that sequentially sets a voltage difference between the selected row line and the selected global bit line based on the first intermediate data;

a data read processing circuit that detects a current flowing in the selected global bit line and sequentially generates second intermediate data from a result of that detection; and

a second data read post-processing circuit that processes the second intermediate data to generate fourth intermediate data,

the first data processing circuit of the controller chip further including a first data read post-processing circuit that processes the fourth intermediate data to generate output data, and

the first and second data write pre-processing circuits and the first and second data read post-processing circuits having a correcting function that corrects a difference that may occur between the input data and the output data.

20. The memory system according to claim 19 , comprising a plurality of the memory main body chips.