Nonvolatile semiconductor memory device
View Patent ↗A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating layer; an organic molecular layer, which is formed between the semiconductor layer and the block insulating layer, and contains first organic molecules and second organic molecules, and in which the first organic molecule has a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the block insulating layer side, and the second organic molecule has a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the block insulating layer side; and a control gate electrode formed on the block insulating layer.
1. A nonvolatile semiconductor memory device, comprising:
a stacked structure having insulating layers and control gate electrode layers, the insulating layers and the control gate electrode layers being alternately stacked;
a block insulating layer provided on the side surface of a hole penetrating the stacked structure from its top surface to the lowermost control gate electrode layer with respect to a stacking direction of the stacked structure;
an organic molecular layer formed on the inner surface of the block insulating layer, the organic molecular layer including first organic molecules and second organic molecules, the first organic molecules and the second organic molecules co-existing in the organic molecular layer, the first organic molecules having a first alkyl chain or a first alkyl halide chain and a charge trapping unit, and the second organic molecules having a second alkyl chain or a second alkyl halide chain and a hydroxy group, an ether group, a carboxyl group or an ester group;
a tunnel insulating layer provided on the inner surface of the organic molecular layer; and
a semiconductor layer provided on the inner surface of the tunnel insulating layer.
2. The device according to claim 1 , wherein the concentration of the second organic molecules is not larger than 10% of the concentration of the first organic molecules.
3. The device according to claim 1 , wherein the carbon number of the second alkyl chain or the second alkyl halide chain is not smaller than 3 and not larger than 30.
4. The device according to claim 1 , wherein the charge trapping unit is a porphyrin derivative, a phthalocyanine derivative, a chlorine derivative, a tetrapyrrole derivative, a bipyridine derivative, an indole derivative, an acene derivative, a quinoxaline derivative, a phenylenevinylene derivative, or a fullerene derivative.
5. The device according to claim 1 , wherein the block insulating layer is a metal oxide film formed by ALD (Atomic Layer Deposition).
6. A memory device, comprising:
a stacked structure having insulating layers and control gate electrode layers, the insulating layers and the control gate electrode layers being alternately stacked;
a semiconductor layer provided on the stacked structure, the semiconductor layer extending from the lowermost one of the control gate electrode layers to the uppermost one of the control gate electrode layers;
a first insulating layer provided between the semiconductor layer and one of the control gate electrode layers;
a organic molecular layer provided between the semiconductor layer and the first insulating layer, the organic molecular layer including first organic molecules and second organic molecules, the first organic molecules and the second organic molecules co-existing in the organic molecular layer, the first organic molecules having a first alkyl chain or a first alkyl halide chain and a charge trapping unit, and the second organic molecules having a second alkyl chain or a second alkyl halide chain and a hydroxyl group, an ether group, a carboxyl group or an ester group; and
second insulating layer provided between the semiconductor layer and the organic molecular layer.