Non-volatile semiconductor memory device
View Patent ↗A semiconductor memory device includes a semiconductor substrate, a first insulating film disposed on the semiconductor substrate, a first conductive film disposed on the first insulating film, a second insulating film disposed on the first conductive film, a second conductive film disposed on the second insulating film, a first electrode disposed on the first conductive film through an opening formed in the second conductive film and the second insulating film, and having a first width, a second electrode that is formed on the first electrode and having a second width, and a wiring layer that is formed on the second electrode. A first width of the first electrode is wider than a second width of the second electrode.
1. A semiconductor memory device comprising:
a semiconductor substrate;
a first insulating film disposed on the semiconductor substrate;
a first conductive film disposed on the first insulating film;
a second insulating film disposed on the first conductive film;
a second conductive film disposed on the second insulating film;
a first electrode disposed on the first conductive film through an opening formed in the second conductive film and the second insulating film, and having a first width;
a second electrode that is formed on the first electrode and having a second width; and
a wiring layer that is formed on the second electrode,
wherein a first width of the first electrode is wider than the second width of the second electrode.
2. The semiconductor memory device according to claim 1 , further comprising:
a first spacer film that is formed between the second electrode and the second conductive film.
3. The semiconductor memory device according to claim 2 , further comprising:
a second spacer film disposed between a side surface of the second electrode and a side surface of the first spacer film.
4. The semiconductor memory device according to claim 3 ,
wherein the second spacer film contacts an upper surface of the first electrode.
5. The semiconductor memory device according to claim 1 ,
wherein the first electrode comprises polysilicon.
6. The semiconductor memory device according to claim 1 ,
wherein the first spacer film comprises silicon nitride.
7. The semiconductor memory device according to claim 1 , wherein the opening extends into the second electrode.
8. A semiconductor memory device comprising:
a semiconductor substrate;
a first insulating film disposed on the semiconductor substrate;
a first conductive film disposed on the first insulating film;
a second insulating film disposed on the first conductive film;
a second conductive film disposed on the second insulating film;
an electrode contacting the first conductive film through an opening formed in the second conductive film and the second insulating film;
a first spacer film disposed between the second conductive film and the electrode; and
a wiring layer that is formed on the electrode,
wherein the wiring layer is disposed along an upper side surface of the first spacer film, and has a width, in an upper end of the first spacer film, wider than a width of an upper surface of the electrode.
9. The semiconductor memory device according to claim 8 ,
wherein the wiring layer has a first lower surface that comes into contact with the electrode and a second lower surface that does not come into contact with the electrode, and
wherein at least a portion of the second lower surface of the wiring layer is positioned lower than the first lower surface of the wiring layer.
10. The semiconductor memory device according to claim 8 ,
wherein the wiring layer contacts an inner side wall of the first spacer film.
11. The semiconductor memory device according to claim 8 , further comprising:
a second spacer film located between a side surface of the wiring layer and the upper side surface of the first spacer film.
12. The semiconductor memory device according to claim 11 ,
wherein the second spacer film contacts an upper surface of the electrode.
13. The semiconductor memory device according to claim 12 , further comprising:
a peripheral transistor having a gate electrode comprising a stack of conductive films; and
a third spacer film along a side surface of the gate electrode of the peripheral transistor,
wherein a material of the third spacer film is the same as a material of the second spacer film.
14. The semiconductor memory device according to claim 8 ,
wherein the electrode contains a polysilicon.
15. The semiconductor memory device according to claim 8 ,
wherein the first spacer film contains a silicon nitride film.
16. The semiconductor memory device according to claim 8 , further comprising:
a transistor that is provided with a gate electrode formed by stacking a plurality of conductive films,
wherein a position of the upper surface of the electrode is higher than a position of an upper surface of the gate electrode of the transistor.