Stacked 3D semiconductor memory structure

1. A semiconductor memory device, comprising:

a conductive member;

a stacked body provided on the conductive member and including a plurality of electrode layers separately stacked on each other;

a semiconductor film provided in the stacked body and extending in a stacking direction of the stacked body, the semiconductor film electrically connected to the conductive member;

a charge storage film provided in the stacked body, the charge storage film provided between the plurality of electrode layers and the semiconductor film;

an interconnect layer provided in the stacked body, the interconnect layer extending in the stacking direction and in a first direction crossing the stacking direction, and being electrically connected to the semiconductor film via the conductive member, the interconnect layer including:

a first portion including silicon; and

a second portion provided on the first portion and including metal;

a first contact portion provided on the stacked body, and electrically connected to the interconnect layer;

a first metal layer provided on the first contact portion and extending in the first direction, the first metal layer being electrically connected to the interconnect layer via the first contact portion;

a second metal layer provided on the first metal layer, and electrically connected to the interconnect layer; and

a second contact portion electrically connected to the interconnect layer via the first metal layer,

the second metal layer being provided on the second contact portion and extending in the first direction,

the second metal layer being electrically connected to the interconnect layer via the second contact portion,

a width of the first metal layer being wider than a width of the first contact portion and a width of the second contact portion in a second direction crossing the stacking direction and the first direction, and

a width of the second metal layer being wider than a width of the first contact portion and a width of the second contact portion in the second direction.

2. The device according to claim 1 , wherein the interconnect layer includes a conductive film provided integrally between the first portion and the stacked body, and between the first portion and the conductive member, the conductive film being electrically connected to the conductive member.

3. The device according to claim 1 , wherein in the stacking direction, a thickness of the first portion is thicker than a thickness of the second portion.

4. The device according to claim 1 , wherein the second metal layer extends in the second direction, and the second metal layer is in contact with the first contact portion.

5. A semiconductor memory device, comprising:

a conductive member;

a stacked body provided on the conductive member and including a plurality of electrode layers separately stacked on each other;

a semiconductor film provided in the stacked body and extending in a stacking direction of the stacked body, the semiconductor film being electrically connected to the conductive member;

a charge storage film provided in the stacked body, the charge storage film being provided between the plurality of electrode layers and the semiconductor film;

an interconnect layer provided in the stacked body, the interconnect layer extending in the stacking direction and in a first direction crossing the stacking direction, and being electrically connected to the semiconductor film via the conductive member, the interconnect layer including:

a first portion including silicon; and

a second portion provided on the first portion and including metal;

a first contact portion provided on the stacked body, and electrically connected to the interconnect layer;

a first metal layer provided on the first contact portion and extending in the first direction, the first metal layer being electrically connected to the interconnect layer via the first contact portion;

a second metal layer provided on the first metal layer, and electrically connected to the interconnect layer;

a second contact portion provided on the stacked body and electrically connected to the semiconductor film;

a third contact portion provided on the second contact portion and electrically connected to the semiconductor film via the second contact portion; and

a third metal layer provided on the third contact portion and extending in a second direction crossing the stacking direction and the first direction, the third metal layer being electrically connected to the semiconductor film via the third contact portion, wherein

the first metal layer is provided between the stacked body and the third metal layer,

the second metal layer is provided between the first metal layer and the third metal layer, and

the third metal layer is separated from the first metal layer and the second metal layer.

6. The device according to claim 5 , wherein a distance between the third metal layer and the first metal layer is larger than a distance between the third metal layer and the second metal layer.

7. A semiconductor memory device, comprising:

a conductive member;

a stacked body provided on the conductive member and including a plurality of electrode layers separately stacked on each other;

a semiconductor film provided in the stacked body and extending in a stacking direction of the stacked body, the semiconductor film being electrically connected to the conductive member;

a charge storage film provided in the stacked body, the charge storage film being provided between the plurality of electrode layers and the semiconductor film;

an interconnect layer provided in the stacked body, the interconnect layer extending in the stacking direction and in a first direction crossing the stacking direction, and being electrically connected to the semiconductor film via the conductive member, the interconnect layer including:

a first portion including silicon; and

a second portion provided on the first portion and including metal;

a first contact portion provided on the stacked body, and electrically connected to the interconnect layer;

a first metal layer provided on the first contact portion and extending in the first direction, the first metal layer being electrically connected to the interconnect layer via the first contact portion;

a second metal layer provided on the first metal layer, and electrically connected to the interconnect layer;

a second contact portion provided on the stacked body and electrically connected to the semiconductor film;

a third contact portion provided on the second contact portion and electrically connected to the semiconductor film via the second contact portion; and

a third metal layer provided on the third contact portion and extending in a second direction crossing the stacking direction and the first direction, the third metal layer being electrically connected to the semiconductor film via the third contact portion,

wherein a height of an upper face of the third contact part is higher than a height of an upper face of the first metal layer.

8. A semiconductor memory device comprising:

a conductive member;

a stacked body provided on the conductive member and including a plurality of electrode layers separately stacked on each other;

a semiconductor film provided in the stacked body and extending in a stacking direction of the stacked body, the semiconductor film being electrically connected to the conductive member;

a charge storage film provided in the stacked body, the charge storage film being provided between the plurality of electrode layers and the semiconductor film;

an interconnect layer provided in the stacked body, the interconnect layer extending in the stacking direction and in a first direction crossing the stacking direction, and being electrically connected to the semiconductor film via the conductive member, the interconnect layer including:

a first portion including silicon; and

a second portion provided on the first portion and including metal;

a first contact portion provided on the stacked body, and electrically connected to the interconnect layer;

a first metal layer provided on the first contact portion and extending in the first direction, the first metal layer being electrically connected to the interconnect layer via the first contact portion;

a second metal layer provided on the first metal layer, and electrically connected to the interconnect layer;

a plurality of second contact portions being in contact with the plurality of electrode layers and extending in the stacking direction;

a plurality of third metal layers provided on the plurality of second contact portions;

a transistor provided on the conductive member;

a third contact portion being in contact with the transistor and extending in the stacking direction; and

a fourth metal layer provided on the third contact portion and being in contact with the third contact portion;

a plurality of fourth contact portions being in contact with the plurality of third metal layers and extending in the stacking direction;

a plurality of fifth metal layers provided on the plurality of fourth contact portions;

a plurality of fifth contact portions being in contact with the fourth metal layer and extending in the stacking direction; and

a sixth metal layer provided on the fifth contact portion,

wherein an upper face of the fourth metal layer is coplanar with an upper face of the first metal layer and an upper face of the plurality of fifth metal layers.

9. A semiconductor memory device, comprising:

a conductive member;

a stacked body provided on the conductive member, and including a plurality of electrode layers separately stacked on each other;

a semiconductor film provided in the stacked body and extending in the stacking direction of the stacked body, the semiconductor film electrically connected to the conductive member;

a charge storage film provided in the stacked body, the charge storage film being provided between the plurality of electrode layers and the semiconductor film;

an interconnect layer provided in the stacked body, the interconnect layer extending in the stacking direction and in a first direction crossing the stacking direction, electrically connected to the semiconductor film via the conductive member, the interconnect layer including:

a first portion including silicon; and

a conductive film integrally provided between the first portion and the stacked body, and between the first portion and the conductive member;

a first contact portion provided on the stacked body, and electrically connected to the interconnect layer;

a first metal layer provided on the first contact portion and extending in the first direction, the first metal layer being electrically connected to the interconnect layer via the first contact portion; and

a second metal layer provided on the first metal layer, and electrically connected to the interconnect layer,

the first portion including at least one stacked film selected from the group consisting of a stacked film of a polysilicon film and a silicon oxide film, and a stacked film of a silicon nitride film and a silicon oxide film.