Non-volatile semiconductor memory device

1. A non-volatile semiconductor memory device comprising:

a tunnel insulation film provided on a semiconductor layer;

a floating gate electrode provided on the tunnel insulation film;

an inter-electrode insulation film provided on the floating gate electrode; and

a control gate electrode provided on the inter-electrode insulation film, wherein

the inter-electrode insulation film includes:

a first insulation film provided on the floating gate electrode side;

a second insulation film provided on the control gate electrode side; and

an intermediate insulation film provided between the first insulation film and the second insulation film, and

the first insulation film includes:

N (N is an integer of 2 or larger) electric charge accumulation layers; and

boundary insulation films provided between the electric charge accumulation layers, wherein

the materials for the boundary insulation films and the second insulation film are the same.

2. The non-volatile semiconductor memory device of claim 1 , wherein the boundary insulation films are provided between the electric charge accumulation layers and between the electric charge accumulation layer and the intermediate insulation film.

3. The non-volatile semiconductor memory device of claim 1 , wherein the electric charge accumulation layers have larger work functions than that of the floating gate electrode.

4. The non-volatile semiconductor memory device of claim 3 , wherein

the electric charge accumulation layers include:

a first electric charge accumulation layer with a first work function; and

a second electric charge accumulation layer with a second work function.

5. The non-volatile semiconductor memory device of claim 4 , wherein the first electric charge accumulation layer is formed from Ru, and the second electric charge accumulation layer is formed from TiN.

6. The non-volatile semiconductor memory device of claim 1 , wherein

the floating gate electrode is formed from a semiconductor, and

the electric charge accumulation layers are formed from a metal.

7. The non-volatile semiconductor memory device of claim 6 , wherein the floating gate electrode has Si as a main ingredient, and the electric charge accumulation layers are formed from Ru.

8. The non-volatile semiconductor memory device of claim 1 , wherein at least one of the electric charge accumulation layers is a charge trap film.

9. The non-volatile semiconductor memory device of claim 1 , wherein barrier height for electric charges accumulated on the floating gate electrode is larger in the boundary insulation films than the electric charge accumulation layers.

10. The non-volatile semiconductor memory device of claim 1 , wherein the electric charge accumulation layers have potentials for confining the electric charges on the first insulation film.

11. The non-volatile semiconductor memory device of claim 10 , wherein the electric charge accumulation layers have N potential wells on the first insulation film.

12. The non-volatile semiconductor memory device of claim 1 , wherein barrier height for the electric charges accumulated on the floating gate electrode is larger in the intermediate insulation film than the boundary insulation films and the second insulation film.

13. The non-volatile semiconductor memory device of claim 1 , comprising an interface insulation film between the floating gate electrode and the inter-electrode insulation film.

14. A non-volatile semiconductor memory device comprising:

a tunnel insulation film provided on a semiconductor layer;

a floating gate electrode provided on the tunnel insulation film;

an inter-electrode insulation film provided on the floating gate electrode; and

a control gate electrode provided on the inter-electrode insulation film, wherein

the inter-electrode insulation film includes:

a first insulation film provided on the floating gate electrode side;

a second insulation film provided on the control gate electrode side; and

an intermediate insulation film provided between the first insulation film and the second insulation film, and

the first insulation film includes:

N (N is an integer of 2 or larger) electric charge accumulation layers; and

boundary insulation films provided between the electric charge accumulation layers, wherein

the boundary insulation films and the second insulation film are higher in dielectric constant than the intermediate insulation film.

15. A non-volatile semiconductor memory device comprising:

a tunnel insulation film provided on a semiconductor layer;

a floating gate electrode provided on the tunnel insulation film;

an inter-electrode insulation film provided on the floating gate electrode; and

a control gate electrode provided on the inter-electrode insulation film, wherein

the inter-electrode insulation film includes:

a first insulation film provided on the floating gate electrode side;

a second insulation film provided on the control gate electrode side; and

an intermediate insulation film provided between the first insulation film and the second insulation film, and

the first insulation film includes:

N (N is an integer of 2 or larger) electric charge accumulation layers; and

boundary insulation films provided between the electric charge accumulation layers, wherein

the intermediate insulation film consists of an oxide of a first element, and the boundary insulation films and the second insulation film consist of an oxide of the first element and a second element.

16. The non-volatile semiconductor memory device of claim 15 , wherein the first element is Si and the second element is Hf.

17. The non-volatile semiconductor memory device of claim 16 , wherein the intermediate insulation film consists of SiO x (x is a positive real number), and the boundary insulation films and the second insulation film consist of HfSiO x .

18. A non-volatile semiconductor memory device comprising:

a tunnel insulation film provided on a semiconductor layer;

a floating gate electrode provided on the tunnel insulation film;

an inter-electrode insulation film provided on the floating gate electrode;

a control gate electrode provided on the inter-electrode insulation film; and

an interface insulation film provided between the floating gate electrode and the inter-electrode insulation film, wherein

the inter-electrode insulation film includes:

first insulation film provided on the floating gate electrode side;

a second insulation film provided on the control gate electrode side; and

an intermediate insulation film provided between the first insulation film and the second insulation film, and

the first insulation film is configured to have N (N is an integer of 2 or larger) potential wells for electric charges accumulated on the floating gate electrode between the interface insulation film and the intermediate insulation film.

19. A non-volatile semiconductor memory device comprising:

a tunnel insulation film provided on a semiconductor layer;

a floating gate electrode provided on the tunnel insulation film;

an inter-electrode insulation film provided on the floating gate electrode;

a control gate electrode provided on the inter-electrode insulation film; and

an interface insulation film provided between the floating gate electrode and the inter-electrode insulation film, wherein

the inter-electrode insulation film includes:

a first insulation film provided on the floating gate electrode side;

a second insulation film provided on the control gate electrode side; and

an intermediate insulation film provided between the first insulation film and the second insulation film, and

the first insulation film is configured to have N (N is an integer of 2 or lager) potential barriers for electric charges accumulated on the floating gate electrode, and the potential barriers are divided in a direction in which the electric charges move from the floating gate electrode to the control gate electrode.