Nonvolatile memory device manufacturing method
A method of manufacturing a nonvolatile memory device includes sequentially forming, on a first wiring layer extending in a first direction, a first layer containing a first metal and a second layer containing a second metal into which the first metal can diffuse. The method further includes oxidizing the first layer and the second layer, removing oxygen from the oxidized first layer by annealing, forming a conductive third layer on the oxidized second layer after removing oxygen from the oxidized first layer, and forming a second wiring layer on the third layer. The second wiring layer extends in a second direction crossing the first wiring layer.
1. A method of manufacturing a nonvolatile memory device comprising:
sequentially forming, on a first wiring layer that extends in a first direction, a first layer containing a first metal and a second layer containing a second metal into which the first metal can diffuse;
oxidizing the first layer and the second layer;
selectively removing oxygen from the oxidized first layer by annealing;
forming a conductive third layer on the oxidized second layer after selectively removing oxygen from the oxidized first layer; and
forming a second wiring layer on the third layer, the second wiring layer extending in a second direction crossing the first direction.
2. The method according to claim 1 , further comprising:
forming a third wiring layer extending in a third direction crossing the first direction;
forming a conductive fourth layer on the third wiring layer; and
sequentially forming, on the fourth layer, a fifth layer containing the second metal and a sixth layer containing the first metal,
wherein the first wiring layer is formed on the sixth layer.
3. The method according to claim 2 , further comprising:
forming a conductive seventh layer on the first wiring layer;
forming a conductive eighth layer on the third layer;
forming a conductive ninth layer on the eighth layer;
forming the first layer and the second layer on the seventh layer; and
forming the second wiring layer on the ninth layer.
4. The method according to claim 3 , further comprising:
forming a conductive tenth layer on the third wiring layer;
forming the fourth layer on the tenth layer;
forming a conductive eleventh layer on the sixth layer;
forming a conductive twelfth layer on the eleventh layer; and
forming the first wiring layer on the twelfth layer.
5. The method according to claim 1 , wherein:
the first metal is higher than the second metal in ionization energy, and
thermal decomposition temperature of oxide of the first metal is lower than that of the second metal.
6. The method according to claim 5 , wherein:
the thermal decomposition temperature of the oxide of the first metal is 280° C. or less,
the thermal decomposition temperature of the oxide of the second metal is 1000° C. or more, and
a temperature of the annealing is 300° C. or more.
7. The method according to claim 1 , wherein the first metal is silver.
8. The method according to claim 7 , wherein the second metal is aluminum, hafnium, titanium, or zinc.
9. A method of manufacturing a nonvolatile memory device comprising:
sequentially forming, on a first wiring layer that extends in a first direction, a first layer containing a first metal and a second layer containing a second metal into which the first metal can diffuse;
oxidizing the first layer and the second layer;
selectively removing oxygen from the oxidized first layer by annealing;
forming a conductive third layer on the oxidized second layer after selectively removing oxygen from the oxidized first layer; and
forming a second wiring layer on the third layer, the second wiring layer extending in a second direction crossing the first direction,
wherein the thermal decomposition temperature of the oxide of the first metal is lower than the thermal decomposition temperature of the oxide of the second metal.
10. The method according to claim 9 , wherein the first metal is silver.
11. The method according to claim 10 , wherein the second metal is aluminum, hafnium, titanium, or zinc.
12. The method according to claim 11 , further comprising:
forming a third wiring layer extending in a third direction crossing the first direction;
forming a conductive fourth layer on the third wiring layer; and
sequentially forming, on the fourth layer, a fifth layer containing the second metal and a sixth layer containing the first metal,
wherein the first wiring layer is formed on the sixth layer.
13. The method according to claim 12 , wherein a temperature of the annealing is 300° C. or more.
14. The method according to claim 9 , wherein a temperature of the annealing is 200° C. or more.
15. The method according to claim 9 , further comprising:
forming a third wiring layer extending in a third direction crossing the first direction; and
forming a conductive fourth layer on the third wiring layer;
sequentially forming, on the fourth layer, a fifth layer containing the second metal and a sixth layer containing the first metal,
wherein the first wiring layer is formed on the sixth layer.
16. The method according to claim 15 , further comprising:
forming a conductive seventh layer on the first wiring layer;
forming a conductive eighth layer on the third layer;
forming a conductive ninth layer on the eighth layer;
forming the first layer and the second layer on the seventh layer; and
forming the second wiring layer on the ninth layer.
17. The method according to claim 16 , further comprising:
forming a conductive tenth layer on the third wiring layer;
forming the fourth layer on the tenth layer;
forming a conductive eleventh layer on the sixth layer;
forming a conductive twelfth layer on the eleventh layer; and
forming the first wiring layer on the twelfth layer.
18. A method of manufacturing a nonvolatile memory device comprising:
sequentially forming, on a first wiring layer that extends in a first direction, a first layer containing a first metal and a second layer containing a second metal into which the first metal can diffuse;
oxidizing the first layer and the second layer;
selectively removing oxygen from the oxidized first layer by annealing at a temperature of 300° C. or more;
forming a conductive third layer on the oxidized second layer after selectively removing oxygen from the oxidized first layer; and
forming a second wiring layer on the third layer, the second wiring layer extending in a second direction crossing the first direction, wherein:
the thermal decomposition temperature of the oxide of the first metal is 280° C. or less, and
the thermal decomposition temperature of the oxide of the second metal is 1000° C. or more.
19. The method according to claim 18 , further comprising:
forming a third wiring layer extending in a third direction crossing the first direction;
forming a conductive fourth layer on the third wiring layer;
sequentially forming, on the fourth layer, a fifth layer containing the second metal and a sixth layer containing the first metal,
wherein the first wiring layer is formed on the sixth layer.