Nonvolatile semiconductor memory device
View Patent ↗A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).
1. A nonvolatile semiconductor memory device, comprising:
a semiconductor layer;
a control gate electrode; and
an organic molecular layer provided between the semiconductor layer and the control gate electrode, the organic molecular layer having an organic molecule including a molecular structure described by formula (1):
wherein
M(+) in formula (1) is a positively charged metal ion selected from the group consisting of a copper ion, an iron ion, a ruthenium ion, a cobalt ion, an iridium ion, a manganese ion, a vanadium ion, a titanium ion, a zirconium ion, a silver ion and a platinum ion,
o is an integer which is not smaller than 1 and changes in accordance with the metal ion,
X 1 to X 8 are independently a chemical modified group or a chemical structure, where at least one of X 1 to X 8 is a chemical modified group that chemically bonds the organic molecule to a material at a semiconductor layer side or a control gate electrode side, and
(−) Ion is a negatively charged ion selected from the group consisting of a chlorine ion, a bromide ion, a triflate ion, a perchlorate ion, a hexafluorophosphate ion and tetrafluoroboron ion.
2. The device according to claim 1 , wherein
the chemical modified group comprises a group selected from the group consisting of an ether group, a silyl ether group, a dimethylsilyl ether group, a diethylsilyl ether group, a carboxy ester group, a sulfonyl ester group, a phosphonic acid ester group, an amide group, a thioether group, an ester group and a thioester group, and
the chemical structure is selected from the group consisting of a hydroxyl group, a hydroxysilyl group, a trimethoxysilyl group, a diethylmethoxysilyl group, a triethoxysilyl group, a dimethylethoxysilyl group, a diethylethoxysilyl group, a trichlorosilyl group, dimethylchlorosilyl group, a diethylchlorosilyl group, a phosphonic acid, a sulfonic acid, an amino acid, a carboxyl group, a thiol group, an alkyl group, a halogen group, and hydrogen.
3. The device according to claim 1 , wherein
the organic molecular layer is a monomolecular film.
4. The device according to claim 1 , wherein
the organic molecule includes a molecular structure described by formula (2),
in which X 9 to X 24 are independently a chemical modified group or a chemical structure, where at least one of X 9 to X 24 is a chemical modified group that chemically bonds the organic molecule to the material at the semiconductor layer side or the control gate electrode side, and
(−) Ion is a negatively charged ion selected from a group consisting of a chlorine ion, a bromide ion, a triflate ion, a perchlorate ion, a hexafluorophosphate ion and tetrafluoroboron ion.
5. The device according to claim 1 , wherein
the organic molecule includes a molecular structure described by formula (3),
in which LX and LY are independently a chemical modified group or a chemical structure, where at least one of LX and LY is a chemical modified group that chemically bonds the organic molecule to the material at the semiconductor layer side or the control gate electrode side, and
(−) Ion is a negatively charged ion selected from a group consisting of a chlorine ion, a bromide ion, a triflate ion, a perchlorate ion, a hexafluorophosphate ion and tetrafluoroboron ion.
6. The device according to claim 1 , wherein
the organic molecule includes a molecular structure described by formula (4),
in which p is an integer not smaller than 0, and
(−) Ion is a negatively charged ion selected from a group consisting of a chlorine ion, a bromide ion, a triflate ion, a perchlorate ion, a hexafluorophosphate ion and tetrafluoroboron ion.
7. The device according to claim 1 , wherein
the organic molecule includes a molecular structure described by a molecular formula (5),
8. The device according to claim 1 , wherein
the organic molecule includes a molecular structure described by formula (6),
9. The device according to claim 1 , wherein
the organic molecule includes a molecular structure described by formula (7),
in which p is an integer not smaller than 0, and
(−) Ion is a negatively charged ion selected from a group consisting of a chlorine ion, a bromide ion, a triflate ion, a perchlorate ion, a hexafluorophosphate ion and tetrafluoroboron ion.
10. The device according to claim 1 , wherein
the organic molecule includes a molecular structure described by formula (8),
11. The device according to claim 1 , wherein
the organic molecule includes a molecular structure described by formula (9),
12. The device according to claim 1 , further comprising
a block insulating film provided between the organic molecular layer and the control gate electrode.
13. The device according to claim 12 , wherein
the block insulating film contains at least one metal oxide selected from a group consisting of hafnium oxide, aluminum oxide, silicon oxide, zirconium oxide and titanium oxide.
14. The device according to claim 1 , further comprising
a tunnel insulating film provided between the semiconductor layer and the organic molecular layer.
15. The device according to claim 14 , wherein
the tunnel insulating film contains a silicon oxide film or an aluminum oxide film.
16. A nonvolatile semiconductor memory device, comprising:
a stacked structure having insulating layers and control gate electrode layers, the insulating layers and the control gate electrode layers being alternately stacked;
a semiconductor layer provided opposed to one of the control gate electrodes; and
an organic molecular layer provided between the semiconductor layer and the one of the control gate electrodes, the organic molecular layer having an organic molecule including a molecular structure described by formula (1):
wherein
M(+) in formula (1) is a positively charged metal ion selected from the group consisting of a copper ion, an iron ion, a ruthenium ion, a cobalt ion, an iridium ion, a manganese ion, a vanadium ion, a titanium ion, a zirconium ion, a silver ion and a platinum ion,
o is an integer which is not smaller than 1 and changes in accordance with the metal ion,
X 1 to X 8 are independently a chemical modified group or a chemical structure, where at least one of X 1 to X 8 is a chemical modified group that chemically bonds the organic molecule to a material at a semiconductor layer side or a control gate electrode side, and
(−) Ion is a negatively charged ion selected from the group consisting of a chlorine ion, a bromide ion, a triflate ion, a perchlorate ion, a hexafluorophosphate ion and tetrafluoroboron ion.
17. The device according to claim 16 , wherein
the chemical modified group comprises a group selected from the group consisting of an ether group, a silyl ether group, a dimethylsilyl ether group, a diethylsilyl ether group, a carboxy ester group, a sulfonyl ester group, a phosphonic acid ester group, an amide group, a thioether group, an ester group and a thioester group, and
the chemical structure is selected from the group consisting of a hydroxyl group, a hydroxysilyl group, a trimethoxysilyl group, a diethylmethoxysilyl group, a triethoxysilyl group, a dimethylethoxysilyl group, a diethylethoxysilyl group, a trichlorosilyl group, dimethylchlorosilyl group, a diethylchlorosilyl group, a phosphonic acid, a sulfonic acid, an amino acid, a carboxyl group, a thiol group, an alkyl group, a halogen group, and hydrogen.
18. The device according to claim 16 , wherein
the organic molecular layer is a monomolecular film.
19. The device according to claim 16 , further comprising
a block insulating film provided between the organic molecular layer and the one of the control gate electrodes.
20. The device according to claim 16 , further comprising
a tunnel insulating film provided between the semiconductor layer and the organic molecular layer.