Nonvolatile semiconductor storage device, and method of manufacturing the same nonvolatile semiconductor storage device
View Patent ↗A nonvolatile semiconductor memory includes an electrically data rewritable or erasable memory cell. The memory cell includes a tunnel insulating film provided on a semiconductor substrate; a floating gate provided on the tunnel insulating film; a first insulating film provided on the floating gate; an interlayer film containing a metal provided on the first insulating film; a second insulating film provided on the interlayer film; a high dielectric constant insulating film provided on the second insulating film; and a gate electrode provided on the high dielectric constant insulating film.
1. A nonvolatile semiconductor storage device comprising an electrically data rewritable or erasable memory cell, wherein the memory cell comprises:
a tunnel insulating film provided on a semiconductor substrate;
a floating gate provided on the tunnel insulating film;
a first insulating film provided on the floating gate;
an interlayer film containing a metal provided on the first insulating film;
a second insulating film provided on the interlayer film;
a high dielectric constant insulating film provided on the second insulating film; and
a gate electrode provided on the high dielectric constant insulating film,
wherein the interlayer film has the shape of dots.
2. The nonvolatile semiconductor storage device according to claim 1 , wherein the interlayer film is a metal layer containing a metal as a main constituent or a silicide layer formed by silicidation of the metal.
3. The nonvolatile semiconductor storage device according to claim 2 , wherein the metal is any of tungsten, ruthenium, iridium, titanium and tantalum.
4. The nonvolatile semiconductor storage device according to claim 1 , wherein the floating gate contains silicon as a main constituent.
5. The nonvolatile semiconductor storage device according to claim 1 , wherein the floating gate is an amorphous silicon film or a polycrystal silicon film.
6. The nonvolatile semiconductor storage device according to claim 1 , wherein the high dielectric constant insulating film contains hafnium as a main constituent.
7. The nonvolatile semiconductor storage device according to claim 1 , wherein the first insulating film is a silicon nitride film or an aluminum oxide film.
8. The nonvolatile semiconductor storage device according to claim 1 , wherein the second insulating film is a silicon nitride film or a silicon oxide film.
9. The nonvolatile semiconductor storage device according to claim 1 , wherein the nonvolatile semiconductor storage device is a NAND flash memory.
10. The nonvolatile semiconductor storage device according to claim 1 , wherein the interlayer film is a silicide.
11. A method of manufacturing a nonvolatile semiconductor storage device comprising an electrically data rewritable or erasable memory cell, the method comprising:
forming a tunnel insulating film on a semiconductor substrate;
forming a floating gate on the tunnel insulating film;
forming a first insulating film on the floating gate and an interlayer film containing a metal on the first insulating film;
forming a second insulating film on the interlayer film;
forming a high dielectric constant insulating film on the second insulating film; and
forming a gate electrode on the high dielectric constant insulating film,
wherein the interlayer film has the shape of dots.
12. The method of manufacturing a nonvolatile semiconductor storage device according to claim 11 , wherein the floating gate contains silicon as a main constituent.
13. The method of manufacturing a nonvolatile semiconductor storage device according to claim 11 , wherein the floating gate is an amorphous silicon film or a polycrystal silicon film.
14. The method of manufacturing a nonvolatile semiconductor storage device according to claim 11 , wherein the high dielectric constant insulating film contains hafnium as a main constituent.
15. The method of manufacturing a nonvolatile semiconductor storage device according to claim 11 , wherein the first insulating film is a silicon nitride film or an aluminum oxide film.
16. The method of manufacturing a nonvolatile semiconductor storage device according to claim 11 , wherein the second insulating film is a silicon nitride film or a silicon oxide film.
17. The method of manufacturing a nonvolatile semiconductor storage device according to claim 11 , wherein the nonvolatile semiconductor storage device is a NAND flash memory.
18. The method of manufacturing a nonvolatile semiconductor storage device according to claim 11 , wherein the interlayer film is a silicide.
19. A method of manufacturing a nonvolatile semiconductor storage device comprising an electrically data rewritable or erasable memory cell, the method comprising:
forming a tunnel insulating film on a semiconductor substrate;
forming a floating gate on the tunnel insulating film;
forming a first insulating film on the floating gate;
forming an amorphous silicon layer on the first insulating film;
forming a metal layer containing a metal on the amorphous silicon layer;
forming a silicide layer by silicidation of the metal layer by an annealing processing and forming a second insulating film on the silicide layer;
forming a high dielectric constant insulating film on the second insulating film; and
forming a gate electrode on the high dielectric constant insulating film.
20. The method of manufacturing a nonvolatile semiconductor storage device according to claim 19 , wherein the metal is any of tungsten, ruthenium, iridium, titanium and tantalum.