LEAD FRAME FOR SEMICONDUCTOR DIE
A lead frame for providing electrical interconnection to a semiconductor die has a generally rectangular flag area having first and second major surfaces and four sides. The flag area is sized and shaped to receive a semiconductor die on one of the first and second major surfaces. A first row of leads is located adjacent to a first one of the four sides of the flag area and a second row of leads is located adjacent to a second one of the four sides of the flag area, where the second one of the four sides is adjacent to the first one of the four sides. The remaining two sides do not have any adjacent leads.
1 . A lead frame for providing electrical interconnection to a semiconductor die, the lead frame comprising:
a generally rectangular flag area having first and second major surfaces and four sides, wherein the flag area is sized and shaped to receive a semiconductor die on one of the first and second major surfaces;
a first row of leads adjacent to a first one of the four sides of the flag area; and
a second row of leads adjacent to a second one of the four sides of the flag area, wherein the second one of the four sides is adjacent to the first one of the four sides, and wherein the remaining two sides of the flag area do not have any adjacent leads.
2 . The lead frame of claim 1 , wherein the flag area and the leads are formed from a sheet of copper foil.
3 . The lead frame of claim 2 , wherein the lead frame is formed by one of cutting, stamping or etching the foil sheet.
4 . The lead frame of claim 1 , wherein the first and second sides have the same number of leads adjacent thereto.
5 . The lead frame of claim 4 , wherein the first and second sides each have three leads adjacent thereto.
6 . The lead frame of claim 5 , wherein the first and second sides each of four leads adjacent thereto.
7 . The lead frame of claim 1 , wherein the flag area is square.
8 . The lead frame of claim 7 , wherein the flag area is 2.4 mm by 2.4 mm in size.
9 . A lead frame for providing electrical interconnection to a semiconductor die, the lead frame comprising:
a generally rectangular flag area having first and second major surfaces and four sides, wherein the flag area is sized and shaped to receive a semiconductor die on one of the first and second major surfaces, and wherein the flag area is 2.4 mm by 2.4 mm in size;
a first row of leads adjacent to a first one of the four sides of the flag area, wherein the first row of leads includes three leads; and
a second row of leads adjacent to a second one of the four sides of the flag area, wherein the second one of the four sides is adjacent to the first one of the four sides, wherein the second row of leads includes three leads, and wherein the other two sides of the flag area do not have any adjacent leads.
10 . The lead frame of claim of claim 9 , wherein the flag area and the leads are formed from a sheet of copper foil by one of cutting, stamping or etching the foil sheet.