Plasma processing method and plasma processing apparatus
View Patent ↗Provided is a plasma processing method capable of removing a Ti-series deposit from the surface of a processing chamber of a plasma processing apparatus without production of a foreign matter such as a boron oxide. The plasma processing method includes carbon-series deposition discharge which succeeds product etching during which a sample containing a Ti material is processed, and during which a carbon-series film is deposited on a Ti reaction by-product deposited on the surface of the processing chamber, and chlorine-series discharge which succeeds the carbon-series deposition discharge and during which the carbon-series film and Ti that are deposited on the surface of the processing chamber are removed.
1. A plasma processing method for etching a sample containing a Ti material, in a plasma, comprising:
a step of performing carbon-series deposition discharge during which a carbon-series film is deposited on a Ti reaction by-product deposited on a surface of a processing chamber in which the sample containing the Ti material was etched in the plasma;
a step of performing chlorine-series discharge during which the Ti deposited on the surface of the processing chamber is removed, after the step of performing carbon-series deposition discharge, and further comprising:
a step of performing oxygen discharge during which the Ti reaction by-product deposited on the surface of the processing chamber is changed to a Ti oxide, just before the step of performing carbon-series deposition discharge.
2. The plasma processing method according to claim 1 , wherein:
a gas employed at the step of performing the carbon-series deposition discharge is at least one of a CHF 3 gas, a CH 4 gas, a C 4 F 6 gas, a C 4 F 8 gas, a CH 3 F gas, and a CHF 2 gas; and
a gas employed at the step of performing chlorine-series discharge is at least one of a Cl 2 gas and a HCl gas.
3. The plasma processing method according to claim 1 , wherein a blower gas is ejected into the processing chamber in the course of each of the step of performing carbon-series deposition discharge and the step of performing chlorine-series discharge, and the Ti reaction by-product deposited in an area other than a plasma generation area is blown away into the plasma generation area and then removed.
4. The plasma processing method according to claim 1 , further comprising, prior to said step of performing the carbon-series deposition, a step of etching the sample containing the Ti material, in the plasma.
5. The plasma processing method according to claim 4 , wherein the step of etching the sample containing the Ti material is performed with an etching gas containing chlorine.
6. A plasma processing method for etching a sample containing a Ti material, in a plasma, comprising:
a step of performing carbon-series deposition discharge during which a carbon-series film is deposited on a Ti reaction by-product deposited on a surface of a processing chamber in which the sample containing the Ti material was etched in the plasma; and
a step of performing chlorine-series discharge during which the Ti deposited on the surface of the processing chamber is removed, after the step of performing carbon-series deposition discharge, wherein:
a gas employed at the step of performing carbon-series deposition discharge is at least one of a CHF 3 gas, a C 4 F 6 gas, a CH 3 F gas, a C 4 F 8 gas and a CHF 2 gas; and
a gas employed at the step of performing chlorine-series discharge is at least one of a Cl 2 gas and a HCl gas.
7. A plasma processing method for etching a sample containing a Ti material, in a plasma, comprising:
a step of performing carbon-series deposition discharge during which a carbon-series film is deposited on a Ti reaction by-product deposited on a surface of a processing chamber in which the sample containing the Ti material was etched in the plasma; and
a step of performing chlorine-series discharge during which the Ti deposited on the surface of the processing chamber is removed, after the step of performing carbon-series deposition discharge, wherein:
the step of performing carbon-series deposition discharge and the step of performing chlorine-series discharge are performed in the presence of a dummy sample in the processing chamber.
8. A plasma processing method for etching a sample containing a Ti material, in a plasma, comprising:
a step of performing carbon-series deposition discharge during which a carbon-series film is deposited on a Ti reaction by-product deposited on a surface of a processing chamber in which the sample containing the Ti material was etched in the plasma; and
a step of performing chlorine-series discharge during which the Ti deposited on the surface of the processing chamber is removed, after the step of performing carbon-series deposition discharge, wherein:
the steps of performing carbon-series deposition discharge followed by performing chlorine-series discharge are repeated.