IP Library Granted Patent US 8,162,216
Granted Patent B2
US 8,162,216 · App. 13/010,346 · Granted Apr 24, 2012

Card and host device

Assignee: Kabushiki Kaisha Toshiba
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,162,216
App. No.
13/010,346
Granted
Apr 24, 2012
Kind
B2
Abstract

A host device is configured to read and write information from and into a card and to supply a supply voltage that belongs to a first voltage range or a second voltage range which is lower than the first voltage range, and issues a voltage identification command to the card. The voltage identification command includes a voltage range identification section, an error detection section, and a check pattern section. The voltage range identification section includes information indicating which one of the first voltage range and the second voltage range the supply voltage belongs. The error detection section has a pattern configured to enable the card which has received the voltage identification command to detect errors in the voltage identification command. The check pattern section has a preset pattern.

Claims (21)

1. A method for controlling a memory device the memory device supporting a small capacity format or a large capacity format which allows for storing larger information than the small capacity format, the method comprising:

receiving a voltage identification command which includes a voltage range identification section, an error detection section, and a check pattern section, the voltage range identification section having a pattern which indicates a range of supply voltage supplied by a host device which issues the voltage identification command;

issuing a response which includes a voltage range identification section and an error detection section or a check pattern section in response to the voltage identification command, the voltage range identification section having a pattern which indicates the same voltage range as the range of the supply voltage when the memory device is operable with the supply voltage, the error detection section having a pattern configured to enable the host device to detect errors in the response;

allowing initialization of the memory device when the voltage range identification section of the response has the same pattern as a pattern of the voltage range identification section of the voltage identification command; and

prohibiting initialization of the memory device when the voltage range identification section of the response has a pattern different from a pattern of the voltage range identification section of the voltage identification command.

2. The method of claim 1 , further comprising:

receiving a command which is issued by the host device when the voltage range identification section of the response has the same pattern as a pattern of the voltage range identification section of the voltage identification command, which instructs initialization of the memory device, and which includes a capacity identification section which has a pattern which indicates whether the host device supports only the small capacity format or both the small capacity format and the large capacity format.

3. The method of claim 2 , wherein the memory device supports the large capacity format, and the method further comprises canceling the initialization of the memory device when that only the small capacity format is supported is indicated in the capacity identification section.

4. A method for controlling a memory device, the memory device supporting a small capacity format or a large capacity format which allows for storing larger information than the small capacity format, the method comprising:

receiving a voltage identification command which includes a voltage range identification section which has a pattern which indicates a range of supply voltage supplied by a host device which issues the voltage identification command;

issuing a response which includes a voltage range identification section which has a pattern which indicates the same voltage range as the range of the supply voltage when the memory device is operable with the supply voltage;

allowing initialization of the memory device when the voltage range identification section of the response has the same pattern as a pattern of the voltage range identification section of the voltage identification command;

prohibiting initialization of the memory device when the voltage range identification section of the response has a pattern different from a pattern of the voltage range identification section of the voltage identification command; and

receiving a command which is issued by the host device when the voltage range identification section of the response has the same pattern as a pattern of the voltage range identification section of the voltage identification command, the command instructing initialization of the memory device and including a capacity identification section, the capacity identification section having a pattern which indicates whether the host device supports only the small capacity format or both the small capacity format and the large capacity format.

5. The method of claim 4 , wherein the memory device supports the large capacity format, and the method further comprises canceling the initialization of the memory device when that only the small capacity format is supported is indicated in the capacity identification section.

6. A method for controlling a host device configured to read and write information from and into a memory device, the method comprising:

issuing a voltage identification command which includes a voltage range identification section, an error detection section, and a check pattern section, the voltage range identification section including a pattern which indicates a range of supply voltage supplied by the host device, the error detection section having a pattern configured to enable the memory device to detect errors in the voltage identification command, the check pattern section having a preset pattern;

initializing the memory device when the host device receives a response which includes a voltage range identification section which has a pattern which indicates the same voltage range as the range of the supply voltage; and

canceling initialization of the memory device when the host device receives a response which includes a voltage range identification section which has a pattern which indicates a voltage range different from the range of the supply voltage.

7. The method of claim 6 , further comprising:

issuing a command which instructs initialization of the memory device and includes a capacity identification section having a pattern which indicates whether the host device supports only a small capacity format or both the small capacity format and a large capacity format which allows for storing larger information than the small capacity format when the voltage range identification section of the response has the same pattern as a pattern of the voltage range identification section of the voltage identification command.

Assignments (4)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043328/0388 →
Priority Claims (1)
WO PCT/JP2004/017627 · Nov 26, 2004 · international
Continuity (6)
Continuation 12861114 · Aug 23, 2010
Continuation 12468886 · May 20, 2009
Continuation 12043005 · Mar 5, 2008
Continuation 11553002 · Oct 26, 2006
Continuation PCTJP2005021689 · Nov 25, 2005
Related Publication 20110114737A1 · May 19, 2011