Methods of fabricating a membrane with improved mechanical integrity
View Patent ↗Forming a thin film acoustic device by patterning a layer of non-conducting material on a first side of a substrate to expose a portion of the first substrate side; depositing layers of conducting material on the layer of non-conducting material and the exposed portion of the first substrate side; depositing a layer of piezoelectric material on the layers of conducting material; depositing and patterning additional layers of material on the layer of piezoelectric material to form a first device electrode; depositing and patterning a masking layer on a second side of the substrate to expose a portion of the second substrate side; etching away the exposed substrate portion to expose the patterned layer of non-conducting material and a portion of the layers of conducting material; and etching away the exposed portion of the layers of conducting material to form a second device electrode.
1. A method of forming a thin film acoustic device having a piezoelectric film between a first electrode and a second electrode that enable application of an electric field to the piezoelectric film, the method comprising:
(a) providing a substrate;
(b) depositing a layer of non-conducting material on a first side of the substrate;
(c) patterning the layer of non-conducting material to expose a portion of the first side of the substrate;
(d) depositing one or more layers of conducting material on the layer of non-conducting material and the exposed portion of the first side of the substrate;
(e) depositing a layer of piezoelectric material on the one or more layers of conducting material;
(f) depositing one or more additional layers of material on the layer of piezoelectric material;
(g) patterning the one or more additional layers to form the first electrode;
(h) depositing a masking layer on a second side of the substrate;
(i) patterning the masking layer to expose a portion of the second side of the substrate;
(j) etching away the exposed portion of the second side of the substrate to expose the patterned layer of non-conducting material and a portion of the one or more layers of conducting material; and
(k) etching away the exposed portion of the one or more layers of conducting material to form the second electrode.
2. The method of claim 1 , wherein step (g) further comprises patterning the one or more additional layers to form a counter electrode adjacent to the first electrode.
3. The method of claim 1 , wherein one of the one or more additional layers is a layer of resonator shifting material.
4. The method of claim 1 , wherein:
the substrate is Si or GaAs;
the layer of non-conducting material is SiO 2 or SiN;
the one or more layers of conducting material comprise a layer of Ti and a layer of Al; and
the layer of piezoelectric material is aluminum nitride or zinc oxide.
5. The method of claim 1 , wherein steps (j) and (k) involve reactive ion etching.
6. The method of claim 1 , wherein step (e) is performed prior to step (k).
7. The method of claim 1 , wherein step (e) is performed prior to steps (j) and (k).
8. The method of claim 1 , wherein step (e) is performed prior to steps (i), (j), and (k).
9. The method of claim 1 , wherein step (e) is performed prior to steps (h), (i), (j), and (k).
10. The method of claim 1 , wherein a first step is step (a), then step (b), then step (c), then step (d), then step (e), then step (f), then step (g), then step (h), then step (i), then step (j), then step (k).