PROCESS FOR FORMING COBALT-CONTAINING MATERIALS
Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
1 . A method of forming a copper material on a substrate, sequentially comprising:
exposing the substrate to an argon plasma during a plasma cleaning process;
depositing a tantalum nitride layer over the substrate by physical vapor deposition;
depositing a cobalt layer having a thickness within a range from about 10 angstroms to about 100 angstroms over the substrate during a chemical vapor deposition process, wherein the substrate is exposed to dicobalt hexacarbonyl butylacetylene or cyclopentadienyl cobalt bis(carbonyl) during the chemical vapor deposition process; and
depositing a copper layer over the substrate during an electrochemical plating process.
2 . The method of claim 1 , further comprising performing an etching process after the depositing a copper layer.
3 . The method of claim 1 , wherein the argon plasma is generated at a power setting between about 500 watts and about 2000 watts.
4 . The method of claim 3 , wherein the cobalt layer has a thickness within a range from about 40 angstroms to about 50 angstroms.
5 . The method of claim 1 , further comprising exposing at least one of the titanium nitride layer or the cobalt layer to a plasma treatment process.
6 . The method of claim 1 , further comprising depositing a tantalum layer prior to depositing the tantalum nitride layer.
7 . The method of claim 6 , wherein the depositing a copper layer comprises:
depositing a copper seed layer by physical vapor deposition; and
depositing a copper bulk layer on the copper seed layer by electrochemical plating.
8 . The method of claim 1 , wherein the exposing the substrate to an argon plasma comprises cyclically generating a plasma from argon and purging the argon from a process chamber.
9 . A method of forming a copper material on a substrate, sequentially comprising:
exposing the substrate to an argon plasma;
depositing a tantalum nitride layer over the substrate by atomic layer deposition, wherein the tantalum nitride layer is formed by reacting pentakis(dimethylamino)tantalum and a nitrogen-containing precursor;
depositing a cobalt layer having a thickness within a range from about 20 angstroms to about 70 angstroms over the substrate during a chemical vapor deposition process, wherein the substrate is exposed to dicobalt hexacarbonyl butylacetylene during the chemical vapor deposition process; and
depositing a copper layer over the substrate during an electrochemical plating process.
10 . The method of claim 9 , wherein the cobalt layer is deposited during a plasma-enhanced chemical vapor deposition process.
11 . The method of claim 9 , wherein depositing the copper layer comprises:
depositing a copper seed layer by physical vapor deposition; and
depositing a copper bulk layer on the copper seed layer by electrochemical plating.
12 . The method of claim 9 , further comprising performing an etching process after the depositing a copper layer.
13 . The method of claim 9 , wherein the nitrogen-containing precursor is ammonia.
14 . The method of claim 9 , wherein the substrate is exposed to the argon plasma for about 30 seconds to about 4 minutes, and wherein the plasma is generated at a power setting between about 900 watts and about 1800 watts.