Semiconductor device and its manufacture method

1. A method for manufacturing a semiconductor device comprising:

mounting chips over a first surface of a support substrate, each of the chips including pads and a first insulating film covering the pads, the support substrate having a second surface that is located on a same side of the first surface and above a level of the first surface, a first height from the first surface to the second surface being higher than second heights from the first surface to bottom surfaces of the first insulating films and being lower than third heights from the first surface to upper surfaces of the first insulating films in a state that the chips are fixed to the first surface of the support substrate;

filling a filler material in a space between the chips and covering the chips and the second surface with the filler material;

grinding the filler material and the first insulating films to a point at which (a) the second surface is exposed, (b) ground surfaces of the first insulating films are, after grinding, located between the bottom surfaces of the first insulating films and the upper surfaces of the first insulating films before grinding, and (c) the ground surfaces of the first insulating films are, after grinding, located at a same level as an upper surface of the filler material after grinding and the second surface of the support substrate; and

after the filler material and the first insulating films are ground, forming wirings over the filler material and the first insulating film, the wirings connecting a pad of one of the chips to a pad of another chip.

2. The method for manufacturing the semiconductor device according to claim 1 , wherein:

first conductive plugs connected to the pads are formed in the first insulating film of each of the chips; and

in grinding the filler material, the filler material is ground until the first conductive plugs are exposed.

3. The method for manufacturing the semiconductor device according to claim 2 , further comprising steps, after the step of grinding the filler material and before the step of forming the wirings, of:

forming a second insulating film over the first insulating film of each of the chips, the filler material and the second surface; and

forming second conductive plugs in the second insulating film, the second conductive plugs being connected to the first conductive plugs and being smaller in horizontal cross-sectional area than the first conductive plugs;

wherein the wirings are formed over the second insulating film and connected to the first conductive plugs via the second conductive plugs.

4. A method for manufacturing a semiconductor device including chips, the method comprising:

before the chips are mounted, preparing a support substrate by grinding a substrate from one surface to form a recess having a first surface as a bottom surface of the recess, whereby the support substrate has a second surface that is located on a same side of the first surface and above a level of the first surface;

mounting chips over the first surface of the support substrate, each of the chips having including pads and a first insulating film covering the pads;

filling a filler material in a space between the chips and covering the chips and the second surface with the filler material;

grinding the filler material until the second surface and the first insulating film are exposed; and

after the filler material is ground, forming wirings over the filler material and the first insulating film, the wirings connecting a pad of one of the chips to a pad of another chip.

5. The method for manufacturing the semiconductor device according to claim 1 , further comprising:

before the chips are mounted, preparing the support substrate by fixing a frame member having a constant height to a part of the area of the first surface of a substrate having the first surface exposed, the second surface then being defined by an upper surface of the frame member.

6. The method for manufacturing the semiconductor device according to claim 5 , wherein:

the frame member has an overall planar shape and comprises an outer frame and a portion and a lattice portion formed inside the outer frame portion, the lattice portion including openings through a thickness of the frame member;

the chips are mounted inside respective ones of the openings; and

each of the openings is surrounded by lattice lines of the lattice portion.

7. The method for manufacturing the semiconductor device according to claim 1 , wherein:

a material constituting the second surface is harder than the filler material.

8. The method for manufacturing the semiconductor device according to claim 1 , comprising, before carrying out the other steps:

providing the first surface and the second surface by

providing a substrate blank having a flat upper surface, and

grinding a recess into the flat upper surface by removing substrate material, such that the recess has a flat bottom surface;

wherein the flat bottom surface comprises the first surface and an unground portion of the flat upper surface comprises the second surface.

9. The method for manufacturing the semiconductor device according to claim 1 , further comprising:

before the chips are mounted, grinding a substrate from one surface to form a recess having the first surface as a bottom surface to prepare the support substrate.