Magnetoresistive device and method for manufacturing the same

1. A magnetoresistive device, comprising:

a carrier;

an xMR-sensor formed on or in the carrier, the xMR-sensor based on an anisotropic magnetoresistance (AMR) effect, a giant magnetoresistance (GMR) effect, or a tunnel magnetoresistance (TMR) effect;

a hard magnetic layer distinct from the xMR-sensor and formed above an active xMR-region of the xMR-sensor; and

an insulating layer distinct from the xMR-sensor and arranged between the xMR-sensor and the hard magnetic layer,

wherein the hard magnetic layer is configured to provide a bias magnetic field in the active xMR-region of the xMR-sensor from a position above the xMR-sensor along the easy axis of the xMR-sensor, and

wherein a vertical distance between the xMR-sensor and the hard magnetic layer is smaller than a lateral dimension of the hard magnetic layer.

2. A method for manufacturing a magnetoresistive device, the method comprising:

providing an xMR-sensor on or in a carrier; and

forming a magnetic layer distinct from the xMR-sensor and above an active xMR-region of the xMR-sensor, wherein the magnetic layer and the xMR-sensor are integrated together to form an integrated circuit type device,

wherein the magnetic layer distinct from the xMR-sensor is configured to provide a bias magnetic field in the active xMR-region of the xMR-sensor from a position above the xMR-sensor along the easy axis of the xMR-sensor.

3. The method according to claim 2 , further comprising:

arranging an insulating layer between the xMR-sensor and the magnetic layer, wherein the step of arranging the insulating layer is performed before forming the magnetic layer above the active xMR-region of the xMR-sensor.

4. The method according to claim 3 , wherein arranging the insulating layer comprises depositing a dielectric layer having a thickness between 3 and 10 μm.

5. The method of claim 3 , wherein a thickness of the insulating layer defines a vertical distance between the magnetic layer and the xMR-sensor, and wherein the vertical distance is smaller than a lateral dimension of the magnetic layer.

6. The method according to claim 2 , wherein forming the magnetic layer comprises electrodepositing or sputtering the hard magnetic layer having a thickness of approximately 3 μm.

7. A method for manufacturing a magnetoresistive device, the method comprising:

providing an xMR-sensor on or in a carrier based on an anisotropic magnetoresistance (AMR) effect, a giant magnetoresistance (GMR) effect, or a tunnel magnetoresistance (TMR) effect;

forming a hard magnetic layer distinct from the xMR-sensor and above an active xMR-region of the xMR-sensor; and

arranging an insulating layer distinct from the xMR-sensor between the xMR-sensor and the hard magnetic layer,

wherein arranging the insulating layer is performed before forming the hard magnetic layer above the active xMR-region of the xMR-sensor, and

wherein the magnetic layer distinct from the xMR-sensor is configured to provide a bias magnetic field in the active xMR-region of the xMR-sensor from a position above the xMR-sensor along the easy axis of the xMR-sensor.

8. The method of claim 7 , wherein the hard magnetic layer, the insulating layer and the xMR-sensor are integrated together to form an integrated circuit type device.

9. The method of claim 7 , wherein a thickness of the insulating layer defines a vertical distance between the hard magnetic layer and the xMR-sensor, and wherein the vertical distance is smaller than a lateral dimension of the hard magnetic layer.

10. The magnetoresistive device of claim 1 , wherein the magnetic layer comprises a hard magnetic layer, and wherein a magnetization direction of the hard magnetic layer is along a direction of an easy axis of the xMR-sensor such that a bias magnetic field is generated from the hard magnetic layer in the active xMR-region of the xMR-sensor along the easy axis of the xMR- sensor.

11. The magnetoresistive device of claim 1 , the hard magnetic layer having a magnetization direction along a direction of an easy axis of the xMR-sensor such that a bias magnetic field is generated from the hard magnetic layer in the active xMR-region of the xMR-sensor along the easy axis of the xMR-sensor.

12. The method of claim 2 , wherein the magnetic layer comprises a hard magnetic layer, and wherein a magnetization direction of the hard magnetic layer is along a direction of an easy axis of the xMR-sensor such that a bias magnetic field is generated from the hard magnetic layer in the active xMR-region of the xMR-sensor along the easy axis of the xMR-sensor.

13. The method of claim 7 , the hard magnetic layer having a magnetization direction along a direction of an easy axis of the xMR-sensor such that a bias magnetic field is generated from the hard magnetic layer in the active xMR-region of the xMR-sensor along the easy axis of the xMR-sensor.