IP Library Granted Patent US 9,805,915
Granted Patent B2
US 9,805,915 · App. 13/020,991 · Granted Oct 31, 2017

Plasma processing apparatus

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,805,915
App. No.
13/020,991
Granted
Oct 31, 2017
Kind
B2
Abstract

In the present invention, there is provided a plasma processing apparatus including a vacuum processing chamber for applying a plasma processing to a sample, a sample stage deployed inside the vacuum processing chamber for mounting the sample thereon, induction antennas provided outside the vacuum processing chamber, a radio-frequency power supply for supplying a radio-frequency power to the induction antennas, and a Faraday shield which is capacitively coupled with the plasma, a radio-frequency voltage being applied to the Faraday shield from the radio-frequency power supply via a matching box, wherein the matching box includes a series LC circuit including a variable capacitor and an inductor, a motor control unit for controlling a motor for the variable capacitor, and a radio-frequency voltage detection unit for detecting the radio-frequency voltage applied to the Faraday shield, the matching box executing a feedback control over the radio-frequency voltage applied to the Faraday shield.

Claims (67)

1. A plasma processing apparatus, comprising:

a vacuum processing chamber in which a sample is processed using plasma;

a sample stage, disposed inside said vacuum processing chamber, for mounting said sample thereon;

induction antennas disposed outside said vacuum processing chamber;

a radio-frequency power supply for supplying a radio-frequency power to said induction antennas;

a Faraday shield capacitively coupled with said plasma;

a control unit; and

a matching box, coupled to said radio-frequency power supply and said control unit, configured to provide a radio-frequency voltage to said Faraday shield, the matching box including:

a series LC circuit, including a variable capacitor and an inductor, for controlling said radio-frequency voltage provided to said Faraday shield by controlling a capacitance of said variable capacitor, the series LC circuit having a resonant point with a resonant capacitance;

a radio-frequency voltage detection unit for detecting said radio-frequency voltage provided to said Faraday shield, and

a motor control circuit configured to:

receive, from the control unit, a control signal and a preset value for the variable capacitor,

control the capacitance of said variable capacitor based on the control signal, a prescribed radio-frequency voltage, and said detected radio-frequency voltage such that a difference between said prescribed radio-frequency voltage and said detected radio-frequency voltage is smaller than a predetermined value, said control signal determining whether said series LC circuit operates in a first control range of said variable capacitor or a second control range of said variable capacitor, the first control range having lower capacitance than the resonant capacitance of the series LC circuit, and the second control range having higher capacitance than the resonant capacitance of the series LC circuit, and

increase said capacitance of said variable capacitor when said control signal is set for first control range operation and said detected radio-frequency voltage is larger than said prescribed radio frequency voltage.

2. The plasma processing apparatus according to claim 1 , wherein said motor control circuit is further configured to decrease said capacitance of said variable capacitor when said control signal is set for first control range operation and said detected radio-frequency voltage is smaller than said prescribed radio frequency voltage.

3. The plasma processing apparatus according to claim 1 , wherein said motor control circuit is further configured to reverse a direction of control of said capacitance of said variable capacitor when said detected radio-frequency voltage is lower than a lower limit that is preset such that said first control range of said variable capacitor is not converted to said second control range or said second control range of said variable capacitor is not converted to said first control range.

4. The plasma processing apparatus according to claim 1 , wherein said motor control circuit is further configured to decrease said capacitance of said variable capacitor when said control signal is set for second control range operation and said detected radio-frequency voltage is larger than said prescribed radio-frequency voltage.

5. The plasma processing apparatus according to claim 4 , wherein said motor control circuit is further configured to increase said capacitance of said variable capacitor when said control signal is set for second control range operation and said detected radio-frequency voltage is smaller than said prescribed radio-frequency voltage.

6. The plasma processing apparatus according to claim 4 , wherein said motor control circuit is further configured to reverse a direction of control of said capacitance of said variable capacitor when said detected radio-frequency voltage is lower than a lower limit that is preset such that said first control range of said variable capacitor is not converted to said second control range or said second control range of said variable capacitor is not converted to said first control range.

7. The plasma processing apparatus according to claim 1 , wherein a change of radio-frequency voltage relative to the capacitance of said variable capacitor in said first control range is smaller than a change of radio-frequency voltage relative to the capacitance of said variable capacitor in said second control range.

8. The plasma processing apparatus according to claim 1 , wherein an ion current flux of the plasma in said first control range is larger than an ion current flux of the plasma in said second control range.

9. The plasma processing apparatus according to claim 7 , wherein an ion current flux of the plasma in said first control range is larger than an ion current flux of the plasma in said second control range.

10. The plasma processing apparatus according to claim 1 , further comprising:

a lower limit analog circuit that transmits the preset value to the motor control circuit, wherein the preset value prevents conversion of said first control range of said variable capacitor to said second control range or said second control range of said variable capacitor to said first control range.

11. The plasma processing apparatus according to claim 10 , wherein said motor control circuit is further configured to reverse a direction of control of said capacitance of said variable capacitor when said radio-frequency voltage is lower than the preset value.

12. A plasma processing apparatus, comprising:

a vacuum processing chamber in which a sample is processed using plasma;

a sample stage, disposed inside said vacuum processing chamber, for mounting said sample thereon;

induction antennas disposed outside said vacuum processing chamber;

a radio-frequency power supply for supplying a radio-frequency power to said induction antennas;

a Faraday shield capacitively coupled with said plasma;

a control unit; and

a matching box, coupled to said radio-frequency power supply and said control unit, configured to provide a radio-frequency voltage to said Faraday shield, the matching box including:

a series LC circuit, including a variable capacitor and an inductor, for controlling said radio-frequency voltage provided to said Faraday shield by controlling a capacitance of said variable capacitor, the series LC circuit having a resonant point with a resonant capacitance;

a radio-frequency voltage detection unit for detecting said radio-frequency voltage provided to said Faraday shield; and

a motor control circuit configured to:

receive, from the control unit, a control signal and a preset value for the variable capacitor,

control the capacitance of said variable capacitor based on the control signal, a prescribed radio-frequency voltage, and said detected radio-frequency voltage such that a difference between prescribed radio-frequency voltage and detected radio-frequency voltage is smaller than a predetermined value, said control signal determining whether said series LC circuit operates in a first control range of said variable capacitor, or in a second control range of said variable capacitor, the first control range having lower capacitance than the resonant capacitance of the series LC circuit, and the second control range having higher capacitance than the resonant capacitance of the series LC circuit, and

decrease said capacitance of said variable capacitor when said control signal is set for first control range operation and said detected radio-frequency voltage is smaller than said prescribed radio-frequency voltage.

13. A plasma processing apparatus, comprising:

a vacuum processing chamber in which a sample is processed using plasma;

a sample stage, disposed inside said vacuum processing chamber, for mounting said sample thereon;

induction antennas disposed outside said vacuum processing chamber;

a radio-frequency power supply for supplying a radio-frequency power to said induction antennas;

a Faraday shield capacitively coupled with said plasma;

a control unit; and

a matching box, coupled to said radio-frequency power supply and said control unit, configured to provide a radio-frequency voltage to said Faraday shield, the matching box including:

a series LC circuit, including a variable capacitor and an inductor, for controlling said radio-frequency voltage provided to said Faraday shield by controlling a capacitance of said variable capacitor the series LC circuit having a resonant point with a resonant capacitance;

a radio-frequency voltage detection unit for detecting said radio-frequency voltage provided to said Faraday shield; and

a motor control circuit configured to:

receive, from the control unit, a control signal and a preset value for the variable capacitor,

control the capacitance of said variable capacitor based on the control signal, a prescribed radio-frequency voltage, and said detected radio-frequency voltage such that a difference between prescribed radio-frequency voltage and detected radio-frequency voltage is smaller than a predetermined value, said control signal determining whether said series LC circuit operates in a first control range of said variable capacitor, or in a second control range of said variable capacitor, the first control range having lower capacitance than the resonant capacitance of the series LC circuit, and the second control range having higher capacitance than the resonant capacitance of the series LC circuit, and

decrease said capacitance of said variable capacitor when said control signal is set for second control range operation and said detected radio-frequency voltage is larger than said prescribed radio-frequency voltage.

14. A plasma processing apparatus, comprising:

a vacuum processing chamber in which a sample is processed using plasma;

a sample stage, disposed inside said vacuum processing chamber, for mounting said sample thereon;

induction antennas disposed outside said vacuum processing chamber;

a radio-frequency power supply for supplying a radio-frequency power to said induction antennas;

a Faraday shield capacitively coupled with said plasma;

a control unit; and

a matching box, coupled to said radio-frequency power supply and said control unit, configured to provide a radio-frequency voltage to said Faraday shield, the matching box including:

a series LC circuit, including a variable capacitor and an inductor, for controlling said radio-frequency voltage provided to said Faraday shield by controlling a capacitance of said variable capacitor, the series LC circuit having a resonant point with a resonant capacitance;

a radio-frequency voltage detection unit for detecting said radio-frequency voltage provided to said Faraday shield; and

a motor control circuit configured to:

receive, from the control unit, a control signal and a preset value for the variable capacitor,

control the capacitance of said variable capacitor based on the control signal, a prescribed radio-frequency voltage, and said detected radio-frequency voltage such that a difference between prescribed radio-frequency voltage and detected radio-frequency voltage is smaller than a predetermined value, said control signal determining whether said series LC circuit operates in a first control range of said variable capacitor, or in a second control range of said variable capacitor, the first control range having lower capacitance than the resonant capacitance of the series LC circuit, and the second control range having higher capacitance than the resonant capacitance of the series LC circuit, and

increase said capacitance of said variable capacitor when said control signal is set for second control range operation and said detected radio-frequency voltage is smaller than said prescribed radio-frequency voltage.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2011
From: GUSHIKEN, MASAHARU; SAITOU, MEGUMU; NISHIO, RYOJI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 025758/0952 →