Epitaxial substrate, semiconductor light-emitting device using such epitaxial substrate and fabrication thereof
The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate.
1. An epitaxial substrate, comprising:
a crystalline substrate being formed of a first material and having a crystal surface; and
a plurality of non-aligned nanorods having non-fixed lattice constant and being formed of an oxide of a second material different from the first material, and randomly arranged on the crystal surface of the crystalline substrate.
2. The epitaxial substrate of claim 1 , wherein the first material is one selected from the group consisting of sapphire, SiC, GaN, GaAs, ZnO, Si, ScAlMgO 4 , SrCu 2 O 2 , YSZ (Yttria-Stabilized Zirconia), LiAlO 2 , LiGaO 2 , Li 2 SiO 3 , LiGeO 3 , NaAlO 2 , NaGaO 2 , Na 2 GeO 3 , Na 2 SiO 3 , Li 3 PO 4 , Li 3 AsO 4 , Li 3 VO 4 , Li 2 MgGeO 4 , Li 2 ZnGeO 4 , Li 2 CdGeO 4 , Li 2 MgSiO 4 , Li 2 ZnSiO 4 , Li 2 CdSiO 4 , Na 2 MgGeO 4 , Na 2 ZnGeO 4 , and Na 2 ZnSiO 4 , and the second material is one selected from the group consisting of Si, Ge, ZnO, ZnS, CdSe, CdTe, CdS, ZnSe, InAs, InP, and metal/silicide.
3. The epitaxial substrate of claim 1 , wherein the surface of epitaxial substrate has an average surface roughness (Ra) in a range from 0.1 nm to 100 nm, and has a mean peak-to-valley height (Rz) in a range from 9 nm to 999 nm.