Method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, comprising:

forming a seed layer over a substrate, the seed layer including first, second, and third portions;

forming a first electrode covering the first portion of the seed layer without forming an electrode on the second and third portions of the seed layer; and

removing the third portion of the seed layer so that the first and second portions remain over the substrate, and the first and second portions are separated from each other.

2. The method according to claim 1 , wherein

the substrate has first and second surfaces, and

the seed layer covers the first surface of the substrate.

3. The method according to claim 2 , further comprising:

before forming the seed layer, forming a wiring structure covering the second surface of the substrate; and

forming a first hole extending from the first surface of the substrate and partially exposing the wiring structure,

wherein forming the seed layer comprises forming the seed layer that covers an inner surface of the first hole and the first surface of the substrate, and

forming the first electrode comprises forming the first electrode that fills the first hole.

4. The method according to claim 3 , wherein

the wiring structure has a first surface opposing the first surface of the substrate, and

the method further comprises:

forming a second electrode partially covering the first surface of the wiring structure, the second electrode being electrically connected to the first electrode.

5. The method according to claim 1 , wherein the third portion of the seed layer is positioned between the first and second portions.

6. The method according to claim 3 , further comprising:

forming a plating film covering the second portion while forming the first electrode.

7. The method according to claim 1 , further comprising:

forming a plating film covering a part of the second portion while forming the first electrode.

8. The method according to claim 1 , wherein forming the first electrode is performed by a plating method.

9. A method of manufacturing a semiconductor device, comprising:

forming a first hole in a substrate;

forming a seed layer covering an inner surface of the first hole and the substrate, the seed layer including first, second, and third portions;

forming a first electrode covering the first portion of the seed layer without forming an electrode on the second and third portions of the seed layer, the first electrode filling the first hole; and

removing the third portion of the seed layer so that the first and second portions remain over the substrate, and the first and second portions are separated from each other.

10. The method according to claim 9 , wherein forming the first electrode comprises:

forming a first mask covering the seed layer, the first mask having a second hole over the first hole, the second hole being larger in size than the first hole;

forming an electrode film filling the first hole and a part of the second hole; and

removing the first mask.

11. The method according to claim 10 , further comprising:

forming a first plating film covering the electrode film.

12. The method according to claim 9 , wherein removing the third portion of the seed layer comprises:

forming a second mask covering the first electrode and the second portion of the seed layer; and

removing the seed layer with the second mask.

13. The method according to claim 9 , further comprising:

forming a second plating film covering the second portion while forming the first electrode.

14. The method according to claim 13 , wherein forming the second plating film comprises:

forming a third mask covering the third portion of the seed layer, the third portion being positioned between the first and second portions; and

forming the first electrode and the second plating film by a plating method with the third mask.

15. The method according to claim 9 , further comprising:

forming a third plating film covering a part of the second portion.

16. The method according to claim 15 , wherein forming the third plating film comprises:

forming a fourth mask over the seed layer, the fourth mask having second and third holes, the second hole being positioned over the first hole, the second hole being larger in size than the first hole, and the third hole exposing a part of the second portion;

forming the first electrode and the third plating film by a plating method with the fourth mask.

17. A method of manufacturing a semiconductor device, comprising:

preparing a substrate having first and second surfaces;

forming a wiring structure covering the first surface of the substrate, the wiring structure having a first surface opposing the second surface of the substrate,

forming a first electrode partially covering the first surface of the wiring structure;

forming a seed layer covering the second surface of the substrate, the seed layer including first, second, and third portions;

forming a second electrode covering the first portion of the seed layer so as to be electrically connected to the first electrode, without forming an electrode on the second and third portions of the seed layer; and

removing the third portion of the seed layer so that the first and second portions remain over the second surface of the substrate, and the first and second portions are separated from each other.

18. The method according to claim 17 , further comprising:

forming a first hole extending from the second surface of the substrate and reaching the wiring structure,

wherein forming the seed layer comprises forming the seed layer that covers an inner surface of the first hole and the second surface of the substrate, and

forming the second electrode comprises forming the second electrode that fills the first hole.

19. The method according to claim 18 , further comprising:

before forming the first hole, forming an insulating film covering the first electrode and the first surface of the wiring structure in order to adjust a vertical size of the semiconductor device.

20. The method according to claim 17 , wherein forming the second electrode is performed by a plating method.