Apparatus and method for electrical detection and localization of shorts in metal interconnect lines
View Patent ↗A test structure for localizing shorts in an integrated circuit and method of testing is described. A first comb structure is formed from a first busbar and a first plurality of fingers extending from the first busbar. A second comb structure formed from a second busbar and a second plurality of fingers extending from the second busbar. The second plurality of fingers is interleaved with the first plurality of fingers. A plurality of pass gates is connected between the first plurality of fingers and the first busbar. A pass gate terminal is electrically connected to the gate electrode of each of the plurality of pass gates. When the pass gates are turned OFF thereby disconnecting the first busbar from the first plurality of fingers, voltage contrast imaging can be used to identify which of the first fingers is adjacent the short.
1. A method for assembling a test structure for testing for electrical shorts, the method comprising:
coupling a first busbar via a plurality of pass gates with a first plurality of fingers; and
coupling a second busbar via a plurality of pass gates with a second plurality of fingers, wherein the second plurality of fingers is interleaved with the first plurality of fingers and wherein a short is detected via determining electrical continuity between the first plurality of fingers and the second plurality of fingers and a short is localized by electrically decoupling the first plurality of fingers from the first busbar and imaging the test structure using voltage contrast to identify which the first plurality of fingers is placed at the same voltage as the second comb-shaped structure as a result of the short.
2. The method of claim 1 , wherein first plurality of fingers are electrically decoupled from the first busbar by changing a voltage applied to a pass gate terminal, wherein the pass gate terminal is electrically coupled to a gate electrode of the plurality of pass gates coupled to the first plurality of fingers, and wherein the plurality of pass gates are electrically interposed between the first busbar and the first plurality of fingers.
3. The method of claim 2 wherein each of the plurality of pass gates comprise a transistor.
4. The method of claim 1 , further comprising:
prior to the imaging of the test structure using voltage contrast, reviewing known defects identified by an inspection tool during manufacture of the test structure to determine if one of the known defects causes the short; and
proceeding with the imaging of the test structure when none of the known defects cause the short.
5. The method of claim 1 , further comprising:
further localizing the short by electrically coupling the first plurality of fingers to the first busbar and electrically decoupling the second plurality of fingers from the second busbar, and imaging the test structure using voltage contrast to identify which of the second plurality of fingers is placed at the same voltage as the first comb-shaped structure as a result of the short.
6. The method of claim 1 , further comprising:
further localizing the short by segmenting each of the first plurality of fingers and each of the second plurality of fingers into a first plurality of finger segments adjacent to the first busbar and a second plurality of finger segments adjacent to a second busbar, and selectively electrically decoupling one of the first and second pluralities of finger segments to determine whether the short is adjacent to the first plurality of finger segments of the second plurality of finger segments.
7. The method of claim 6 , wherein the first plurality of fingers and the second plurality of fingers are further segmented into additional finger segments, the method further comprising selectively electrically decoupling the additional finger segments to further localize the short.