Semiconductor device
A semiconductor device includes a substrate, a semiconductor element disposed on the substrate, a heat radiating plate disposed on the substrate and covering the semiconductor element, and a connection member connecting an upper surface of the semiconductor element and a lower surface of the heat radiating plate, wherein the connection member includes a first member being in contact with the upper surface of the semiconductor element and having a first melting point, a second member being in contact with the first member, having a larger area than the first member, and having a second melting point higher than the first melting point, and a third member interposed between the second member and the heat radiating plate, having an area smaller than the second member, and having a third melting point lower than the second melting point.
1. A semiconductor device comprising:
a substrate;
a semiconductor element disposed over the substrate;
a heat radiating member disposed over the substrate and covering the semiconductor element; and
a connection member connecting an upper surface of the semiconductor element and a lower surface of the heat radiating member, wherein
the connection member includes:
a first member being in contact with the upper surface of the semiconductor element and having a first melting point;
a second member being in contact with the first member, having a larger area than the first member, and having a second melting point higher than the first melting point; and
a third member interposed between the second member and the heat radiating member, having an area smaller than the second member, and having a third melting point lower than the second melting point.
2. The semiconductor device according to claim 1 , wherein
the first member and the third member are made of low melting point solder, and
the second member is made of high melting point solder.
3. The semiconductor device according to claim 1 , wherein
the first member and the third member are made of Sn-37Pb solder, and
the second member is made of Sn-95Pb solder.
4. The semiconductor device according to claim 1 , wherein
an Au metallized layer is formed over the upper surface of the semiconductor element, and
a surface of the heat radiating member in contact with the connection member is plated with Au.
5. The semiconductor device according to claim 1 , wherein a planar shape of each of the first member, the second member, and the third member is a rectangle.
6. The semiconductor device according to claim 5 , wherein
a side surface of the third member is set back from a side surface of the second member at least one side of the rectangles, and
an electronic component is disposed on the substrate at a position beside the set-back side surface of the third member.
7. The semiconductor device according to claim 6 , wherein
the side surface of the third member is set back from the side surface of the second member only at two sides opposite to each other among the four sides of the rectangles.
8. The semiconductor device according to claim 6 , wherein the side surface of the third member is set back from the side surface of the second member only at one side of the rectangles.
9. The semiconductor device according to claim 6 , wherein the side surface of the second member is located above the electronic component.
10. The semiconductor device according to claim 6 , wherein the second member covers the electronic component.