Substrate processing method, manufacturing method of EUV mask, and EUV mask
According to the substrate processing method in the embodiments, as a mask substrate used for forming an EUV mask, a mask substrate in which a first film having a first hydrophilicity is formed on one main surface and a resist is applied to another main surface is exposed from a side of the resist. Then, a hydrophilic treatment is performed on a surface of the first film to make the surface of the first film have a second hydrophilicity larger than the first hydrophilicity. Then, a development treatment of the resist is performed with respect to the mask substrate in which the hydrophilic treatment is performed on the surface of the first film to have the second hydrophilicity.
1. A substrate processing method comprising:
exposing a mask substrate in which a first film having a first hydrophilicity is formed on one main surface and a resist is applied to another main surface as a mask substrate used for forming an EUV mask, from a side of the resist;
performing a hydrophilic treatment on a surface of the first film to make the surface of the first film have a second hydrophilicity larger than the first hydrophilicity; and
performing a development treatment of the resist with respect to the mask substrate in which the hydrophilic treatment is performed on the surface of the first film to have the second hydrophilicity.
2. The substrate processing method according to claim 1 , wherein the performing the hydrophilic treatment on the surface of the first film includes performing the hydrophilic treatment to make the surface of the first film have the second hydrophilicity by irradiating the surface of the first film with UV light.
3. The substrate processing method according to claim 1 , wherein the performing the hydrophilic treatment on the surface of the first film includes performing the hydrophilic treatment to make the surface of the first film have the second hydrophilicity by supplying an oxidizing liquid to the surface of the first film.
4. The substrate processing method according to claim 3 , wherein
the performing the development treatment includes supplying a developer to the resist, and
the supplying the developer is performed at a same time as the supplying the oxidizing liquid to the surface of the first film performed in the hydrophilic treatment.
5. The substrate processing method according to claim 1 , wherein the performing the hydrophilic treatment on the surface of the first film includes performing the hydrophilic treatment to make the surface of the first film have the second hydrophilicity so that a contact angle of the surface of the first film with respect to a rinse liquid becomes 5° or less.
6. The substrate processing method according to claim 2 , further comprising pre-wetting the mask substrate by a liquid that does not react with the mask substrate before the performing the development treatment of the resist after the irradiating the surface of the first film with UV light.
7. The substrate processing method according to claim 2 , wherein the performing the development treatment of the resist is performed within five minutes after the irradiating the surface of the first film with UV light.
8. A manufacturing method of EUV mask comprising:
manufacturing an EUV mask by a substrate processing method including
exposing a mask substrate in which a first film having a first hydrophilicity is formed on one main surface and a resist is applied to another main surface as a mask substrate used for forming the EUV mask, from a side of the resist,
performing a hydrophilic treatment on a surface of the first film to make the surface of the first film have a second hydrophilicity larger than the first hydrophilicity, and
performing a development treatment of the resist with respect to the mask substrate in which the hydrophilic treatment is performed on the surface of the first film to have the second hydrophilicity.
9. The method according to claim 8 , wherein the performing the hydrophilic treatment on the surface of the first film includes performing the hydrophilic treatment to make the surface of the first film have the second hydrophilicity by irradiating the surface of the first film with UV light.
10. The method according to claim 8 , wherein the performing the hydrophilic treatment on the surface of the first film includes performing the hydrophilic treatment to make the surface of the first film have the second hydrophilicity by supplying an oxidizing liquid to the surface of the first film.
11. The method according to claim 10 , wherein
the performing the development treatment includes supplying a developer to the resist, and
the supplying the developer is performed at a same time as the supplying the oxidizing liquid to the surface of the first film performed in the hydrophilic treatment.
12. The method according to claim 8 , wherein the performing the hydrophilic treatment on the surface of the first film includes performing the hydrophilic treatment to make the surface of the first film have the second hydrophilicity so that a contact angle of the surface of the first film with respect to a rinse liquid becomes 5° or less.
13. The method according to claim 9 , further comprising pre-wetting the mask substrate by a liquid that does not react with the mask substrate before the performing the development treatment of the resist after the irradiating the surface of the first film with UV light.
14. The method according to claim 9 , wherein the performing the development treatment of the resist is performed within five minutes after the irradiating the surface of the first film with UV light.
15. An EUV mask that is manufactured by a substrate processing method including
exposing a mask substrate in which a first film having a first hydrophilicity is formed on one main surface and a resist is applied to another main surface as a mask substrate used for forming the EUV mask, from a side of the resist,
performing a hydrophilic treatment on a surface of the first film to make the surface of the first film have a second hydrophilicity larger than the first hydrophilicity, and
performing a development treatment of the resist with respect to the mask substrate in which the hydrophilic treatment is performed on the surface of the first film to have the second hydrophilicity.
16. The EUV mask according to claim 15 , wherein when performing the hydrophilic treatment on the surface of the first film, the hydrophilic treatment is performed to make the surface of the first film have the second hydrophilicity by irradiating the surface of the first film with UV light.
17. The EUV mask according to claim 15 , wherein when performing the hydrophilic treatment on the surface of the first film, the hydrophilic treatment is performed to make the surface of the first film have the second hydrophilicity by supplying an oxidizing liquid to the surface of the first film.
18. The EUV mask according to claim 17 , wherein supply of a developer to the resist performed in the development treatment is performed at a same time as supply of the oxidizing liquid to the surface of the first film performed in the hydrophilic treatment.
19. The EUV mask according to claim 15 , wherein when performing the hydrophilic treatment on the surface of the first film, the hydrophilic treatment is performed to make the surface of the first film have the second hydrophilicity so that a contact angle of the surface of the first film with respect to a rinse liquid becomes 5° or less.
20. The EUV mask according to claim 16 , wherein the mask substrate is pre-wet by a liquid that does not react with the mask substrate before performing the development treatment of the resist after irradiating the surface of the first film with UV light.