Mode-locked semiconductor laser device and driving method thereof
Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×10 18 cm −3 or more and 1×10 20 cm −3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
1. A method of driving a semiconductor laser device comprising:
(a) a laminated structure in which a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer having an emission region and a saturable absorption region composed of the GaN base compound semiconductor, and a second compound semiconductor layer having a second conductive that is different from the first conductive type and composed of the GaN base compound semiconductor are successively laminated;
(b) a second electrode formed on the second compound semiconductor layer; and
(c) a first electrode electrically connected to the first compound semiconductor layer,
wherein the laminated structure is formed on a compound semiconductor substrate having polarity,
the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer,
the well layer has a depth of 1 nm or more and 10 nm or less,
the barrier layer has an impurity doping density of 2×10 18 cm −3 or more and 1×10 20 cm −3 or less, and
generating an optical pulse in the emission region by passing a current from the second electrode to the first electrode via the laminated structure, and
wherein the second electrode is separated into at least a first portion and a second portion by a separation groove, and a value of electric resistance between the first portion and the second portion of the second electrode is 1×10 2 Ω or more.
2. The method of driving a mode-locked semiconductor laser device according to claim 1 ,
wherein the first portion creates a forward bias state by passing the current to the first electrode via the emission region and the second portion applies an electric field to the saturable absorption region by the separation groove, and
the forward bias state is created by passing the current from the first portion of the second electrode to the first electrode via the emission region and the electric field is applied to the saturable absorption region by applying a voltage to between the first electrode and the second portion of the second electrode.
3. The method of driving a mode-locked semiconductor laser device according to claim 1 ,
wherein the separation groove that separates the second electrode into the first portion and the second portion has a width of 1 μm or more.
4. The method of driving a mode-locked semiconductor laser device according to claim 1 ,
wherein the saturable absorption region has a length shorter than that of the emission region.
5. The method of driving a mode-locked semiconductor laser device according to claim 2 ,
wherein the current is passed from the second electrode to the first electrode via the emission region and also an external electric signal is superimposed on the first electrode from the second electrode via the emission region.
6. The method of driving a mode-locked semiconductor laser device according to claim 1 ,
wherein an optical signal is caused to enter the laminated structure from an end face.
7. The method of driving a mode-locked semiconductor laser device according to claim 1 ,
wherein an impurity with which the barrier layer is doped is silicon.
8. The method of driving a mode-locked semiconductor laser device according to claim 1 ,
wherein a separate confinement heterostructure of ridge stripe type is included.
9. The method of driving a mode-locked semiconductor laser device according to claim 1 ,
wherein a separate confinement heterostructure of oblique ridge stripe type is included.
10. A semiconductor laser device comprising:
(a) a laminated structure in which a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer having an emission region and a saturable absorption region composed of the GaN base compound semiconductor, and a second compound semiconductor layer having a second conductive that is different from the first conductive type and composed of the GaN base compound semiconductor are successively laminated;
(b) a second electrode foimed on the second compound semiconductor layer; and
(c) a first electrode electrically connected to the first compound semiconductor layer,
wherein the laminated structure is formed on a compound semiconductor substrate having polarity,
the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer,
the well layer has a depth of 1 nm or more and 10 nm or less,
the barrier layer has an impurity doping density of 2×10 18 cm −3 or more and 1×10 20 cm −3 or less, and
an optical pulse develops in the emission region by a current being passed from the second electrode to the first electrode via the laminated structure, and
wherein the second electrode is separated into at least a first portion and a second portion by a separation groove, and a value of electric resistance between the first portion and the second portion of the second electrode is 1×10 2 Ω or more.