Plasma processing apparatus and method thereof
The following description relates to a plasma processing apparatus and a method thereof. The plasma processing apparatus comprises a first plasma chamber having a first plasma discharge space, a first plasma source for supplying a first activation energy to the first plasma discharge space within the first plasma chamber, a second plasma chamber which is connected to the first plasma chamber and has a second discharge space, and a second plasma source for supplying a second activation energy for inducing inductive coupled plasma to the second plasma discharge space within the second plasma chamber.
1. A plasma processing apparatus comprising:
a first plasma chamber comprising a first plasma discharge space;
a first plasma source to supply a first activation energy to the first plasma discharge space within the first plasma chamber;
a second plasma chamber connected to the first plasma chamber via an adapter, the second plasma chamber including a second plasma discharge space;
a second plasma source to supply a second activation energy to the second plasma discharge space to induce inductively coupled plasma in the second plasma discharge space; and
a plurality of ferrite cores located over the second plasma chamber,
wherein each ferrite core, of the plurality of ferrite cores, has a longitudinal axis oriented toward the adapter,
wherein each ferrite core has flux inlet/outlet ports oriented toward the second plasma discharge space, and
wherein a flux extending from each ferrite core flows in the second plasma chamber along the longitudinal axis.
2. The plasma processing apparatus of claim 1 , wherein the first plasma chamber comprises:
a ring-shaped discharge tube comprising a gas inlet and a gas outlet; and
a ring-shaped core around which a coil is wound, the coil being commonly coupled with the ring-shaped discharge tube to be electrically connected with a power supply source.
3. The plasma processing apparatus of claim 1 , wherein the second plasma chamber comprises:
a substrate support, installed in the second plasma discharge space, over which a substrate to be processed is loaded.
4. The plasma processing apparatus of claim 3 , wherein a gas distribution baffle is located between the substrate support and the second plasma discharge space.
5. The plasma processing apparatus of claim 3 , further comprising:
an antenna coil, wound around each ferrite core, of the plurality of ferrite cores, to induce the inductive coupled plasma to the inside of a second plasma chamber body by receiving the power from the power supply source.
6. The plasma processing apparatus of claim 5 , wherein the antenna coil is connected in series or in parallel to the power supply source.
7. The plasma processing apparatus of claim 6 , wherein an impedance matching unit is located between the power supply source and the antenna coil to perform the impedance matching.
8. The plasma processing apparatus of claim 7 , wherein a current balance circuit is installed between the impedance matching unit and the antenna coil to adjust the balance of the current supplied to the antenna coil.
9. The plasma processing apparatus of claim 3 , wherein the substrate support is biased by a single frequency power source or by two or more power sources having different frequencies.
10. The plasma processing apparatus of claim 1 , wherein the plurality of ferrite cores are located on a dielectric window through which a flux from the plurality of ferrite cores passes.