IP Library Patent Application 13036196
Patent Application
App. No. 13/036,196

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL

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Quick Facts
Patent No.
US None
App. No.
13/036,196
Abstract

The present invention provides a method of manufacturing a silicon single crystal which can more greatly suppress a pinhole formation in the silicon single crystal, which is a method of manufacturing a silicon single crystal by the Czochralski method in which a silicon material to be silicon melt is melted in a furnace body and then a silicon single crystal is pulled up. After melting the silicon material and before the start of pulling up the silicon single crystal, a heater power is set to be higher than that during the step of pulling up the silicon single crystal, and an internal furnace pressure is set as 30 Torr or less, which is lower than that during the step of pulling up the silicon single crystal, the power and pressure being maintained for a predetermined time, and then the step of pulling up the silicon single crystal is carried out.

Claims (4)

1 . A method of manufacturing a silicon single crystal by the Czochralski method which comprises a step of melting a silicon material to be silicon melt in a furnace body and then a step of pulling up the silicon single crystal, wherein after the step of melting said silicon material and before the start of the step of pulling up said silicon single crystal, a heater power is set to be higher than that during the step of pulling up said silicon single crystal, and an internal furnace pressure is set as 30 Torr or less which is lower than that during the step of pulling up said silicon single crystal, said power and pressure being maintained for a predetermined time, and then the step of pulling up said silicon single crystal is carried out.

2 . The method as claimed in claim 1 , wherein said predetermined time is from 0.5 to 60 minutes.

3 . The method as claimed in claim 1 , wherein said internal furnace pressure during the step of pulling up said silicon single crystal is not more than 100 Torr.

4 . The method as claimed in claim 2 , wherein said internal furnace pressure during the step of pulling up said silicon single crystal is not more than 100 Torr.

Assignments (3)
CHANGE OF NAME Recorded Mar 13, 2013
From: COVALENT SILICON CORPORATION
To: GLOBALWAFERS JAPAN CO., LTD.
Reel/Frame 029991/0421 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 11, 2013
From: COVALENT MATERIALS CORPORATION
To: COVALENT SILICON CORPORATION
Reel/Frame 029962/0497 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2011
From: MINAMI, TOSHIRO
To: COVALENT MATERIALS CORPORATION
Reel/Frame 026051/0740 →