Light-emitting diode element and method for fabricating the same
A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.
1. A method of fabricating a light-emitting diode, the method comprising steps of:
a step (a) of treating a surface of a graphite substrate by oxygen-ashing and forming an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm on the surface of the graphite substrate;
a step (b) of forming an AlN layer on the amorphous carbon layer with MOCVD (Metal Organic Chemical Vapor Deposition);
a step (c) of forming an n-type cladding layer consisting of a nitride semiconductor on the AlN layer;
a step (d) of forming a quantum well layer consisting of a nitride semiconductor on the n-type cladding layer; and
a step (e) of forming a p-type cladding layer consisting of a nitride semiconductor on the quantum well layer.
2. The method according to claim 1 , further comprising a step of forming a buffer layer consisting of a nitride semiconductor on the AlN layer prior to forming the n-type cladding layer.
3. The method according to claim 2 , further comprising forming a p-side electrode, wherein the p-side electrode is transparent.
4. The method according to claim 3 , wherein the quantum well layer consists of a multi-quantum well layer.
5. The method according to claim 1 , further comprising forming a p-side electrode, wherein the p-side electrode is transparent.
6. The method according to claim 1 , wherein the quantum well layer consists of a multi-quantum well layer.
7. The method according to claim 1 , further comprising forming a p-side electrode by a liquid phase synthesis.
8. The method according to claim 7 , wherein the p-side electrode is made of ZnO.
9. A substrate comprising:
a graphite substrate;
an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate; and
an AlN layer formed on the amorphous carbon layer.
10. A method of fabricating a substrate, the method comprising steps of:
a step (a) of treating a surface of a graphite substrate by oxygen ashing and forming an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm on the surface of the graphite substrate; and
a step (b) of forming an AlN layer on the amorphous carbon layer with MOCVD (Metal Organic Chemical Vapor Deposition).
11. A light-emitting diode comprising:
a graphite substrate;
an amorphous carbon layer formed on the graphite substrate;
an AlN layer formed on the amorphous carbon layer;
an n-type cladding layer consisting of a nitride semiconductor formed on the AlN layer;
a quantum well layer consisting of a nitride semiconductor formed on the n-type cladding layer;
a p-type cladding layer consisting of a nitride semiconductor formed on the quantum well layer;
a p-side electrode electrically connected to the p-type cladding layer; and
an n-type electrode electrically connected to the n-type cladding layer,
wherein the amorphous carbon layer has a thickness of not less than 20 nm and not more than 60 nm.
12. The light-emitting diode according to claim 11 , further comprising a buffer layer comprising a nitride semiconductor interposed between the AlN layer and the n-type cladding layer.
13. The light-emitting diode according to claim 12 , wherein the p-side electrode is transparent.
14. The light-emitting diode according to claim 13 , wherein the quantum well layer consists of a multi-quantum well layer.
15. The light-emitting diode according to claim 11 , wherein the p-side electrode is transparent.
16. The light-emitting diode according to claim 11 , wherein the quantum well layer consists of a multi-quantum well layer.
17. A method of emitting a light with a light-emitting diode, the method comprising steps of:
a step (a) of preparing the light-emitting diode comprising:
a graphite substrate,
an amorphous carbon layer formed on the graphite substrate,
an AlN layer formed on the amorphous carbon layer,
an n-type cladding layer consisting of a nitride semiconductor and formed on the AlN layer,
a quantum well layer consisting of a nitride semiconductor and formed on the n-type cladding layer,
a p-type cladding layer consisting of a nitride semiconductor and formed on the quantum well layer,
a p-side electrode electrically connected to the p-type cladding layer, and
an n-side electrode electrically connected to the n-type cladding layer,
wherein the amorphous carbon layer has a thickness of not less than 20 nm and not more than 60 nm; and
a step (b) of applying a voltage between the p-side electrode and the n-type electrode to emit light from the quantum well layer.
18. The method according to claim 17 , wherein the p-side electrode is transparent.
19. The method according to claim 17 , wherein the quantum well layer consists of a multi-quantum well layer.