Integrated nitride and silicon carbide-based devices
View Patent ↗Monolithic electronic devices are providing including a high bandgap layer. A first type of nitride device is provided on a first portion of the high bandgap layer, the first nitride device including first and second implanted regions respectively defining source and drain regions of the first type of nitride device. A second type of nitride device, different from the first type of nitride device, is provided on a second portion of the high bandgap layer, the second type of nitride device including an implanted highly conductive region. At least a portion of the implanted highly conductive region of the second type of nitride device is coplanar with at least a portion of both the first and second implanted regions of the first type of nitride device.
1. A monolithic electronic device, comprising:
a high bandgap layer;
a first type of nitride device on a first portion of the high bandgap layer, the first type of nitride device including first and second implanted regions respectively defining source and drain regions of the first type of nitride device; and
a second type of nitride device, different from the first type of nitride device, on a second portion of the high bandgap layer, the second type of nitride device including an implanted highly conductive region,
wherein at least a portion of the implanted highly conductive region of the second type of nitride device is coplanar with at least a portion of both the first and second implanted regions of the first type of nitride device.
2. The monolithic electronic device of claim 1 :
wherein the first and second implanted regions comprise first and second implanted n-type regions; and
wherein the implanted highly conductive region comprises an implanted highly conductive n-type region.
3. The monolithic electronic device of claim 1 :
wherein the first and second implanted regions are disposed in the first portion of the high bandgap layer; and
wherein the implanted highly conductive region is disposed in the second portion of the high bandgap layer.
4. The monolithic electronic device of claim 1 , wherein the highly conductive region has a doping concentration of from about 5.0×10 18 to about 6.0×10 18 cm −3 and a depth of from about 0.1 to about 1.0 μm.
5. The monolithic electronic device of claim 1 :
wherein the first and second regions have a first doping concentration greater than a doping concentration of the high bandgap layer; and
wherein the highly conductive region has a second doping concentration that is greater than the doping concentration of the high bandgap layer.
6. The monolithic electronic device of claim 1 , further comprising:
a first plurality of electrical contacts on the first and second implanted regions, the first plurality of contacts defining a first electronic device of the first type of nitride device; and
a second plurality of electrical contacts on the implanted highly conductive implanted region, the second plurality of contacts defining a second electronic device of the second type of electronic device.
7. The monolithic electronic device of claim 6 , wherein the implanted highly conductive region on the high bandgap layer extends beneath all of the second plurality of electrical contacts.
8. The monolithic electronic device of claim 1 , further comprising a regrown epitaxial layer on the implanted highly conductive region.
9. The monolithic electronic device of claim 8 , wherein the regrown epitaxial layer comprises n-type Gallium Nitride.
10. A monolithic electronic device, comprising:
a high bandgap layer;
a first type of nitride device on a first portion of the high bandgap layer, the first type of nitride device including first and second implanted regions respectively defining source and drain regions of the first type of nitride device;
at least first and second electrical contacts on the first and second implanted regions, respectively;
a second type of nitride device, different from the first type of nitride device, on a second portion of the high bandgap layer, the second type of nitride device including an implanted highly conductive region; and
at least a third electrical contact on the implanted highly conductive region,
wherein a first interface between the first and second implanted regions and the first and second electrical contacts is coplanar with a second interface between the implanted highly conductive region and third electrical contact.
11. The monolithic electronic device of claim 10 :
wherein the first and second implanted regions comprise first and second implanted n-type regions; and
wherein the implanted highly conductive region comprises an implanted highly conductive n-type region.
12. The monolithic electronic device of claim 10 :
wherein the first and second implanted regions are disposed in the first portion of the high bandgap layer; and
wherein the implanted highly conductive region is disposed in the second portion of the high bandgap layer.
13. The monolithic electronic device of claim 10 , wherein the highly conductive region has a doping concentration of from about 5.0×10 18 to about 6.0×10 18 cm −3 and a depth of from about 0.1 to about 1.0 μm.
14. The monolithic electronic device of claim 10 :
wherein the first and second implanted regions have a first doping concentration greater than a doping concentration of the high bandgap layer; and
wherein the implanted highly conductive region has a second doping concentration that is greater than the doping concentration of the high bandgap layer.
15. The monolithic electronic device of claim 10 , wherein the implanted highly conductive region on the high bandgap layer extends beneath all of the second plurality of electrical contacts.
16. The monolithic electronic device of claim 10 , further comprising a regrown epitaxial layer on the implanted highly conductive region.
17. The monolithic electronic device of claim 16 , wherein the regrown epitaxial layer comprises n-type Gallium Nitride.