Two-step silicide formation

1. A method for forming a semiconductor device, the method comprising the steps of:

providing a transistor comprising a source/drain region, within a substrate, and having a portion of the source/drain region raised over the substrate, an extension region within the substrate adjoining the source/drain region and extending toward a gate on the substrate, and a dielectric spacer against the gate wherein the dielectric spacer covers at least part of the extension region;

forming a silicide intermix layer over the source/drain region, on a sidewall of the raised portion of the source/drain region, and over a portion of the extension region which is not covered by the dielectric spacer;

depositing dielectric material over the silicide intermix layer on top of the source/drain region;

creating a contact opening through the dielectric material, wherein the contact opening extends at least as far as the silicide intermix layer over the source/drain region; and

forming a silicide contact at the bottom of the contact opening.

2. The method of claim 1 , further comprising the step of removing an outer region of the dielectric spacer to expose part of the extension region.

3. The method of claim 2 , wherein the dielectric spacer comprises an inner spacer against the gate and outer spacer, and wherein the outer region removed is the outer spacer.

4. The method of claim 3 , further comprising the step of:

after forming the silicide intermix layer and before the step of depositing the dielectric material, replacing the outer spacer.

5. The method of claim 1 , wherein the step of forming the silicide contact at the bottom of the contact opening comprises the silicide contact consuming less than a length of the source/drain region.

6. The method of claim 1 , wherein the step of creating the contact opening comprises etching the contact opening past the silicide intermix layer into the source/drain region.

7. The method of claim 6 , wherein the silicide contact is a second silicide intermix layer.

8. The method of claim 1 , further comprising the step of:

after forming the silicide intermix layer, performing an annealing process to convert the silicide intermix layer to an epitaxial textured silicide.

9. A method for forming a semiconductor device, the method comprising the steps of:

providing a transistor comprising a source/drain region within a substrate, an extension region within the substrate adjoining the source/drain region and extending toward a gate on the substrate, and a dielectric spacer against the gate wherein the dielectric spacer covers at least part of the extension region;

forming a silicide intermix layer over both the source/drain region and a portion of the extension region which is not covered by the dielectric spacer;

depositing dielectric material over the silicide intermix layer on top of the source/drain region;

creating a contact opening through the dielectric material, wherein the contact opening extends past the silicide intermix layer into the source/drain region; and

forming a silicide contact at the bottom of the contact opening.

10. The method of claim 9 , wherein the silicide contact is a second silicide intermix layer.

11. The method of claim 9 , wherein the step of forming the silicide contact at the bottom of the contact opening comprises the silicide contact consuming less than a length of the source/drain region.

12. The method of claim 9 , further comprising the step of:

after forming the silicide intermix layer, performing an annealing process to convert the silicide intermix layer to an epitaxial textured silicide.