IP Library Granted Patent US 8,552,891
Granted Patent B2
US 8,552,891 · App. 13/040,606 · Granted Oct 8, 2013

Method and apparatus for parallel data interfacing using combined coding and recording medium therefor

Inventors: Seung Jun Bae (Hwaseong-si, KR); Jong Keun Ahn (Yongin-si, KR); Kwang Chol Choe (Seoul, KR)
Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,552,891
App. No.
13/040,606
Granted
Oct 8, 2013
Kind
B2
Abstract

A semiconductor device may include a coding lookup table unit including a plurality of coding lookup tables each of which is selected by a respectively selection signal, and a selection unit configured to receive one of N-bit parallel data and extract respective encoded data corresponding to the selection signal and to which the N-bit parallel data is mapped from the coding lookup table unit, and encoded data and extract respective N-bit parallel data corresponding to the selection signal and to which the encoded data is mapped from the coding lookup table unit, wherein N is 2 or an integer greater than 2, and wherein the coding lookup tables respectively store a plurality of coded data patterns that respectively correspond to patterns of the N-bit parallel data and are random temporally and spatially.

Claims (21)

1. A semiconductor device, comprising:

an encoding lookup table unit including a plurality of encoding lookup tables each of which is selected by a respective selection signal; and

a selection unit configured to receive N-bit parallel data and to extract respective encoded data corresponding to a selection signal and to which the N-bit parallel data is mapped from the encoding lookup table unit, where N is 2 or an integer greater than 2,

wherein encoding lookup tables respectively store a plurality of encoded data patterns that respectively correspond to patterns of the N-bit parallel data that have been sequentially encoded by a first coding and a second coding, the first and second codings being different types of coding, wherein the first coding is scrambling and the second coding is direct current (DC) balance encoding.

2. The semiconductor device as claimed in claim 1 , wherein the selection signal includes at least part of one signal among an address signal, a burst length signal, and a command signal.

3. The semiconductor device as claimed in claim 1 , further comprising an output driver configured to output the encoded data through a plurality of data lines.

4. The semiconductor device as claimed in claim 1 , wherein the selection unit comprises a selector configured to select and output the encoded data corresponding to the selection signal among a plurality of sets of encoded data respectively output from the plurality of encoding lookup tables.

5. The semiconductor device as claimed in claim 1 , further comprising a decoding lookup table unit including a plurality of decoding lookup tables, wherein the selection unit is configured to receive encoded data and extract N-bit parallel data that corresponds to the selection signal and to which the encoded data is mapped from the decoding lookup table unit, and coded data stored by the decoding lookup tables is a plurality of N-bit parallel data patterns that respectively correspond to patterns of the encoded data which are random temporally and spatially.

6. The semiconductor device as claimed in claim 5 , wherein the selection unit comprises a selector configured to select and output the N-bit parallel data corresponding to the selection signal among a plurality of sets of N-bit parallel data respectively output from the plurality of decoding lookup tables.

7. The semiconductor device as claimed in claim 5 , wherein the N-bit parallel data is obtained by direct current (DC) balance decoding and descrambling the encoded data.

8. A memory device for storing data in compliance with a memory controller, the memory device comprising:

a data receiver configured to receive first parallel data from the memory controller through a plurality of data lines based on a write command of the memory controller;

an encoder configured to encode the first parallel data and output encoded data; and

a data storage unit configured to receive the encoded data through an internal bus of the memory device and store the encoded data, wherein the encoder includes:

an encoding lookup table unit including a plurality of encoding lookup tables each of which is selected by a respective selection signal; and

a selection unit configured to receive N-bit parallel data and to extract respective encoded data which corresponds to a selection signal and to which the N-bit parallel data is mapped from the encoding lookup table unit, where N is 2 or an integer greater than 2,

wherein the encoding lookup tables respectively store a plurality of encoded data patterns which respectively correspond to patterns of the N-bit parallel data that have been sequentially encoded by a first coding and a second coding, the first and second codings being different types of coding, wherein the first coding is scrambling and the second coding is direct current (DC) balance encoding.

9. The memory device as claimed in claim 8 , further comprising:

a decoder configured to decode data output from the data storage unit; and

an output driver configured to transmit output data of the decoder to the memory controller.

10. The memory device as claimed in claim 8 , wherein the selection signal comprises at least part of one signal among an address signal, a burst length signal, and a command signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2011
From: BAE, SEUNG JUN; AHN, JONG KEUN; CHOE, KWANG CHOL
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 025916/0538 →
Priority Claims (2)
KR 10-2006-0047857 · May 27, 2006 · national
KR 10-2010-0020143 · Mar 5, 2010 · national
Continuity (4)
Continuation In Part 12923858 · Oct 12, 2010
Continuation 12453109 · Apr 29, 2009
Continuation 11802886 · May 25, 2007
Related Publication 20110156934A1 · Jun 30, 2011