Method for fabrication of a semiconductor device and structure
A method to fabricate a junction-less transistor comprising: forming at least two regions of semiconductor doping; first region with a relatively high level of dopant concentration and second region with at least 1/10 lower dopant concentration, and etching away a portion of said first region for the formation of the transistor gate.
1. A method to fabricate a junction-less transistor comprising:
forming a transistor body with variable doping, said body comprising a first portion of high dopant concentration and a second portion of at least 1/10 less dopant concentration, and then a transistor channel length is defined by an etch step,
wherein said etch step removes regions of at least one of said portions, and
said first portion and said second portion are of the same dopant type, and
said transistor body comprises source, drain, and channel of said junction-less transistor.
2. A method according to claim 1 comprising layer transfer.
3. A method according to claim 1 wherein said transistor is on top of a fabric comprising one or more horizontal interconnection layers comprising aluminum or copper.
4. A method according to claim 1 wherein said transistor is part of a monolithic 3D IC.
5. A method according to claim 1 wherein said etch step comprises forming a transistor gate.
6. A method according to claim 4 , wherein said transistor gate is a multi-sided gate.
7. A method according to claim 1 wherein said transistor body with variable doping comprises a dopant gradient as the doping changes from high concentration to low concentration.
8. A method according to claim 1 further comprising source and drain transistor contacts wherein said contacts are made to said first portion of high dopant concentration.
9. A method accordingly to claim 1 wherein said first portion overlays said second portion.
10. A method according to claim 1 wherein said transistor body with variable doping is formed prior to layer transfer.
11. A method to fabricate a junction-less transistor comprising:
forming a transistor body with variable doping, said body comprising a first portion of high dopant concentration and a second portion of at least 1/10 less dopant concentration,
wherein said first portion overlays said second portion, and
a transistor channel length is defined by an etch step, and
said first portion and said second portion are of the same dopant type, and
said transistor body comprises source, drain, and channel of said junction-less transistor.
12. A method according to claim 11 comprising layer transfer.
13. A method according to claim 11 wherein said transistor is on top of a fabric comprising one or more horizontal interconnection layers comprising aluminum or copper.
14. A method according to claim 11 wherein said transistor is part of a monolithic 3D IC.
15. A method according to claim 11 wherein said etch step comprises forming a transistor gate.
16. A method according to claim 15 wherein said transistor gate is a multi-sided gate.
17. A method according to claim 11 wherein said transistor body with variable doping comprises a dopant gradient as the doping changes from high concentration to low concentration.
18. A method according to claim 11 further comprising source and drain transistor contacts wherein said contacts are made to said first portion of high dopant concentration.
19. A method according to claim 11 wherein said transistor body with variable doping is formed prior to layer transfer.