Method for synthesis of high quality graphene
View Patent ↗A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10 −6 Torr, the wafer temperature is raised to about 1500° C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530° C. or more, the carbon atoms self assemble themselves into graphene.
1. A method for the production of graphene comprising:
spacing a silicon wafer from a silicon carbide wafer in a pressure vessel;
reducing the pressure in the vessel to vacuum;
heating the silicon wafer to a first temperature to evaporate silicon from its opposing surface;
while simultaneously, heating the silicon carbide wafer to a second temperature to anneal the silicon carbide wafer,
wherein the first temperature is 1200° C. and the second temperature is about 1500° C. and above.
2. The method of claim 1 wherein the spacing between the silicon wafer and the silicon carbide wafer is expanded.
3. The method of claim 2 wherein the spacing between the silicon wafer and the silicon carbide wafer is in the order of a few hundred microns to a few centimeters.
4. The method of claim 3 wherein the spacing between the silicon wafer and the silicon carbide wafer is in the order of 20 mm.
5. A method for the production of graphene comprising:
spacing a silicon wafer from a silicon carbide wafer in a pressure vessel;
reducing the pressure in the vessel to vacuum;
heating the silicon wafer to a first temperature to evaporate silicon from its opposing surface;
while simultaneously, heating the silicon carbide wafer to a second temperature to anneal the silicon carbide wafer,
wherein following anneal, the silicon carbide wafer is heated above said second annealing temperature to a higher temperature to form graphene,
wherein the higher temperature is around 1530° C.
6. A method for the production of graphene comprising:
spacing a silicon wafer from a silicon carbide wafer in a pressure vessel:
reducing the pressure in the vessel to vacuum;
heating the silicon wafer to a first temperature to evaporate silicon from its opposing surface;
while simultaneously, heating the silicon carbide wafer to a second temperature to anneal the silicon carbide wafer,
wherein the silicon wafer is a second silicon carbide wafer,
wherein said first and second temperatures are the same.
7. The method of claim 6 wherein the silicon carbide wafer is held at a final temperature for about 20 minutes.
8. The method of claim 7 wherein the final temperature is about 1600° C.
9. The method of claim 7 wherein the final temperature is about 1700° C.