Elastic wave filter device with IDT electrodes that include a narrower-pitch portion
An elastic wave filter device having improved sharpness of filter characteristics includes a longitudinally-coupled resonator-type elastic wave filter section including first to third IDT electrodes each including a plurality of electrode fingers, and first and second reflectors. The first to third IDT electrodes include narrower-pitch portions provided in end portions thereof, which are each adjacent to another IDT electrode in a direction of propagation of elastic waves, each of the narrower-pitch portions having a smaller period of electrode fingers than a period of electrode fingers in the remaining portion of the relevant IDT electrode. The number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the first IDT electrode, and the number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the third IDT electrode, differ from each other.
1. An elastic wave filter device comprising:
a piezoelectric substrate; and
a longitudinally-coupled resonator-type elastic wave filter section including first to third IDT electrodes, which are successively arranged on the piezoelectric substrate in a direction of propagation of elastic waves and each of which includes a plurality of electrode fingers, and first and second reflectors arranged on the piezoelectric substrate respectively on both sides of a region in which the first to third IDT electrodes are disposed, as viewed in the direction of propagation of the elastic waves; wherein
each of the first to third IDT electrodes includes a narrower-pitch portion provided in an end portion thereof, which is adjacent to another one of the first to third IDT electrodes in the direction of propagation of the elastic waves, the narrower-pitch portion having a smaller period of electrode fingers than a period of electrode fingers in a remaining portion of the respective one of the first to third IDT electrodes;
a number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on a side closer to the first IDT electrode, and a number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on a side closer to the third IDT electrode, differ from each other; and
the narrower-pitch portions of the first to third IDT electrodes are arranged such that a frequency of an attenuation pole generated due to a 1st-order resonance mode of the longitudinally-coupled resonator-type elastic wave filter section is located within a transient band which is positioned between a pass band and a stop band of the longitudinally-coupled resonator-type elastic wave filter section.
2. The elastic wave filter device according to claim 1 , wherein the number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the first IDT electrode, and the number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the third IDT electrode, differ by at least two from each other.
3. The elastic wave filter device according to claim 1 , wherein a period of the electrode fingers in the narrower-pitch portion of the first IDT electrode and a period of the electrode fingers in the narrower-pitch portion of the third IDT electrode differ from each other.
4. The elastic wave filter device according to claim 3 , wherein
the number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the first IDT electrode, is less than the number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the third IDT electrode; and
the period of the electrode fingers in the narrower-pitch portion of the first IDT electrode is less than the period of the electrode fingers in the narrower-pitch portion of the third IDT electrode.
5. The elastic wave filter device according to claim 3 , wherein
the number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the first IDT electrode, is less than the number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the third IDT electrode;
at least one of the period of the electrode fingers in the narrower-pitch portion of the first IDT electrode and the period of the electrode fingers in the narrower-pitch portion of the third IDT electrode is not constant; and
an average value of the periods of the electrode fingers in the narrower-pitch portion of the first IDT electrode is smaller than an average value of the periods of the electrode fingers in the narrower-pitch portion of the third IDT electrode.
6. The elastic wave filter device according to claim 1 , wherein the number of electrode fingers in the narrower-pitch portion of the first IDT electrode and the number of electrode fingers in the narrower-pitch portion of the third IDT electrode differ from each other.
7. An elastic wave filter device comprising:
a piezoelectric substrate; and
a longitudinally-coupled resonator-type elastic wave filter section including first to third IDT electrodes, which are successively arranged on the piezoelectric substrate in a direction of propagation of elastic waves and each of which includes a plurality of electrode fingers, and first and second reflectors arranged on the piezoelectric substrate respectively on both sides of a region in which the first to third IDT electrodes are disposed, as viewed in the direction of propagation of the elastic waves; wherein
each of the first to third IDT electrodes includes a narrower-pitch portion provided in an end portion thereof, which is adjacent to another one of the first to third IDT electrodes in the direction of propagation of the elastic waves, the narrower-pitch portion having a smaller period of electrode fingers than a period of electrode fingers in a remaining portion of the respective one of the first to third IDT electrodes;
a number of electrode fingers in the narrower-pitch portion of the first IDT electrode and a number of electrode fingers in the narrower-pitch portion of the third IDT electrode differ from each other; and
the narrower-pitch portions of the first to third IDT electrodes are arranged such that a frequency of an attenuation pole caused due to a 1st-order resonance mode of the longitudinally-coupled resonator-type elastic wave filter section is located within a transient band which is positioned between a pass band and a stop band of the longitudinally-coupled resonator-type elastic wave filter section.
8. The elastic wave filter device according to claim 7 , wherein the number of electrode fingers in the narrower-pitch portion of the first IDT electrode and the number of electrode fingers in the narrower-pitch portion of the third IDT electrode differ by at least two from each other.
9. The elastic wave filter device according to claim 7 , wherein a period of the electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on a side closer to the first IDT electrode, and a period of the electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on a side closer to the third IDT electrode, differ from each other.
10. The elastic wave filter device according to claim 9 , wherein
the number of electrode fingers in the narrower-pitch portion of the first IDT electrode is less than the number of electrode fingers in the narrower-pitch portion of the third IDT electrode; and
the period of the electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the first IDT electrode, is less than the period of the electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the third IDT electrode.
11. The elastic wave filter device according to claim 9 , wherein
the number of electrode fingers in the narrower-pitch portion of the first IDT electrode is less than the number of electrode fingers in the narrower-pitch portion of the third IDT electrode;
at least one of the period of the electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the first IDT electrode, and the period of the electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the third IDT electrode, is not constant; and
an average value of the periods of the electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the first IDT electrode, is less than an average value of the periods of the electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the third IDT electrode.