Intensity selective exposure photomask
An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.
1. A device, comprising:
a gradated photomask including:
a transparent substrate;
a first region of the transparent substrate including a first array of a first plurality of sub-resolution features, wherein the first region blocks a first percentage of an incident radiation and wherein each of the sub-resolution features of the first plurality of sub-resolution features is an area of attenuating material surrounded by the transparent substrate, wherein each area of attenuating material includes a single opening in the attenuating material; and
a second region of the transparent substrate including a second array of a second plurality of sub-resolution features, wherein the second region blocks a second percentage of the incident radiation different than the first percentage, and wherein each of the each of the sub-resolution features of the second plurality of sub-resolution features of the second array is an area of attenuating material surrounded by the transparent substrate, wherein each area has a single opening in the attenuating material.
2. The device of claim 1 , wherein the regions of the first and second array have the same pitch.
3. The device of claim 1 , wherein the openings have a width between approximately 0.25 μm and approximately 0.1 μm.
4. The device of claim 1 , wherein the openings of the sub-resolution features of the first array have a first width, and the openings of the sub-resolution features of the second array have a second width greater than the first width.
5. The device of claim 1 , wherein the opening is approximately a square.
6. The device of claim 1 , wherein the gradated photomask does not include a pattern defining an integrated circuit feature.
7. The device of claim 1 , further comprising:
a second photomask, wherein the second photomask includes:
a third region defining a first plurality of features having a first pattern density; and
a fourth region defining a second plurality features having a second pattern density, wherein the third region of the second photomask and the first region of the gradated photomask are configured to expose a first section of a target substrate, and wherein the fourth region of the second photomask and the second region of the gradated photomask expose a second section of the target substrate.
8. The device of claim 7 , wherein at least one of the first plurality of features and the second plurality of features of the second photomask are gate features of a semiconductor device.
9. The device of claim 7 , wherein the first plurality of features and the second plurality of features of the second photomask define gate features of a semiconductor device.
10. A photomask, comprising:
a plurality of sub-resolution features, wherein each of the plurality of sub-resolution features is a region of attenuating material where each region has a window formed within the region attenuating material such that the region includes an outer edge of attenuating material and an inner edge of attenuating material, the inner edge concentric with the outer edge and defining the window, wherein the regions of attenuating material are spaced a distance from one another, the plurality of sub-resolution features including:
a first array of features each feature including a window having a first width formed in a first region of attenuating material; and
a second array of features each feature including a window having a second width formed in a second region of attenuating material, wherein the first width and the second width are different.
11. The photomask of claim 10 , wherein the first width is between approximately 0.25 μm and approximately 0.1 μm.
12. The photomask of claim 10 , wherein the photomask includes no pattern defining a main feature of an integrated circuit device.
13. A method of forming a semiconductor device, comprising:
using a gradated photomask, wherein the gradated photomask includes:
a first region including a first array of attenuating material sub-resolution features, wherein the first region blocks a first percentage of an incident radiation, and wherein the first array of attenuating material sub-resolution features are spaced a first distance from one another; and
a second region including a second array of attenuating material sub-resolution features, wherein the second region blocks a second percentage of the incident radiation different than the first percentage, and wherein the second array of attenuating material sub-resolution features are spaced the first distance from one another, and wherein each of the attenuating material sub-resolution features of the first and second array include an opening disposed in an area of attenuating material.
14. The method of claim 13 , further comprising:
providing the incident radiation to the graduated photomask; and
exposing a photoresist layer on a target substrate by passing the incident radiation through the gradated photomask.
15. The method of claim 13 , further comprising:
using a second photomask prior to using the graduated photomask, wherein the second photomask includes:
a third region defining a first plurality of features having a first pattern density; and
a fourth region defining a second plurality features having a second pattern density, wherein the third region of the second photomask and the first region of the gradated photomask are configured to expose a first section of a target substrate, and wherein the fourth region of the second photomask and the second region of the gradated photomask expose a second section of the target substrate.
16. The device of claim 1 , wherein the opening is completely surrounded by the area of attenuating material.
17. The device of claim 1 , wherein the regions of attenuating material of the first array are spaced a first distance from each other and wherein the regions of attenuating material of the second array are spaced a second distance from each other.
18. The device of claim 17 , wherein the first and second distance are substantially equal.
19. The device of claim 1 , wherein the regions of attenuating material are squares.